ZVP3310A

Diodes Incorporated ZVP3310A

Part Number:
ZVP3310A
Manufacturer:
Diodes Incorporated
Ventron No:
2478672-ZVP3310A
Description:
MOSFET P-CH 100V 0.14A TO92-3
ECAD Model:
Datasheet:
ZVP3310A

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Specifications
Diodes Incorporated ZVP3310A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP3310A.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    20Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -140mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • Turn On Delay Time
    8 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    20 Ω @ 150mA, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    140mA Ta
  • Rise Time
    8ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    8 ns
  • Continuous Drain Current (ID)
    140mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVP3310A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.As a result of its turn-off delay time, which is 8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

ZVP3310A Features
a continuous drain current (ID) of 140mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8 ns
a 100V drain to source voltage (Vdss)


ZVP3310A Applications
There are a lot of Diodes Incorporated
ZVP3310A applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZVP3310A More Descriptions
P-channel MOSFET Transistor, -140 mA -100 V, 3-Pin TO-92
ZVP3310 Series P-Channel 100 V 140 mA 625 mW Vertical DMOS FET - TO-92
Mosfet, P-Ch, 100V, 0.14A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVP3310A
Product Comparison
The three parts on the right have similar specifications to ZVP3310A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Position
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Transistor Application
    Termination
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    View Compare
  • ZVP3310A
    ZVP3310A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    20Ohm
    Matte Tin (Sn)
    Other Transistors
    -100V
    MOSFET (Metal Oxide)
    WIRE
    260
    -140mA
    40
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    8 ns
    P-Channel
    20 Ω @ 150mA, 10V
    3.5V @ 1mA
    50pF @ 25V
    140mA Ta
    8ns
    100V
    10V
    ±20V
    8 ns
    8 ns
    140mA
    20V
    -100V
    5 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP3306FTC
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -
    -60V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -90mA
    10
    -
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    8 ns
    P-Channel
    14 Ω @ 200mA, 10V
    3.5V @ 1mA
    50pF @ 18V
    90mA Ta
    8ns
    60V
    10V
    ±20V
    8 ns
    8 ns
    90mA
    20V
    -
    8 pF
    1.02mm
    3.04mm
    1.4mm
    -
    -
    RoHS Compliant
    Lead Free
    DUAL
    unknown
    R-PDSO-G3
    Not Qualified
    0.09A
    -
    -
    -
    -
    -
  • ZVP3306ASTZ
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    -
    -60V
    MOSFET (Metal Oxide)
    WIRE
    260
    -160mA
    40
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    8 ns
    P-Channel
    14 Ω @ 200mA, 10V
    3.5V @ 1mA
    50pF @ 18V
    160mA Ta
    8ns
    60V
    10V
    ±20V
    8 ns
    8 ns
    160mA
    20V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    R-PSIP-W3
    Not Qualified
    -
    SWITCHING
    -
    -
    -
    -
  • ZVP3306FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    14Ohm
    Matte Tin (Sn)
    -
    -60V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -90mA
    40
    -
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    8 ns
    P-Channel
    14 Ω @ 200mA, 10V
    3.5V @ 1mA
    50pF @ 18V
    90mA Ta
    8ns
    60V
    10V
    ±20V
    8 ns
    8 ns
    90mA
    20V
    -60V
    8 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    DUAL
    -
    -
    -
    0.09A
    -
    SMD/SMT
    -3.5V
    -60V
    -3.5 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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