Diodes Incorporated ZVP3306A
- Part Number:
- ZVP3306A
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070096-ZVP3306A
- Description:
- MOSFET P-CH 60V 160MA TO92-3
- Datasheet:
- ZVP3306A
Diodes Incorporated ZVP3306A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP3306A.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- Tolerance1%
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance470kOhm
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated75V
- SubcategoryOther Transistors
- Power Rating100mW
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating-160mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Case Code (Metric)1608
- Case Code (Imperial)0603
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- Turn On Delay Time8 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs14 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 18V
- Current - Continuous Drain (Id) @ 25°C160mA Ta
- Rise Time8ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time8 ns
- Continuous Drain Current (ID)160mA
- Threshold Voltage-3.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Feedback Cap-Max (Crss)8 pF
- Height450μm
- Length1.6mm
- Width800μm
- REACH SVHCYes
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVP3306A Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 18V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 8 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3.5V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
ZVP3306A Features
a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 8 ns
a threshold voltage of -3.5V
a 60V drain to source voltage (Vdss)
ZVP3306A Applications
There are a lot of Diodes Incorporated
ZVP3306A applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 18V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 8 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3.5V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
ZVP3306A Features
a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 8 ns
a threshold voltage of -3.5V
a 60V drain to source voltage (Vdss)
ZVP3306A Applications
There are a lot of Diodes Incorporated
ZVP3306A applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZVP3306A More Descriptions
P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92
Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to ZVP3306A.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedToleranceJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishVoltage - RatedSubcategoryPower RatingVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountCase Code (Metric)Case Code (Imperial)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltageCurrentTransistor ApplicationTerminationDrain Current-Max (Abs) (ID)Dual Supply VoltageNominal VgsView Compare
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ZVP3306A17 WeeksSurface MountThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk20061%e3yesActive1 (Unlimited)3EAR99470kOhmMatte Tin (Sn)75VOther Transistors100mW-60VMOSFET (Metal Oxide)BOTTOMWIRE260-160mA4031608060311625mW TaSingleENHANCEMENT MODE625mW8 nsP-Channel14 Ω @ 200mA, 10V3.5V @ 1mA50pF @ 18V160mA Ta8ns60V10V±20V8 ns8 ns160mA-3.5V20V-60V8 pF450μm1.6mm800μmYesNoROHS3 CompliantLead Free--------
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17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2006-e3yesActive1 (Unlimited)3EAR9920OhmMatte Tin (Sn)-Other Transistors--100VMOSFET (Metal Oxide)-WIRE260-140mA403--11625mW TaSingleENHANCEMENT MODE625mW8 nsP-Channel20 Ω @ 150mA, 10V3.5V @ 1mA50pF @ 25V140mA Ta8ns100V10V±20V8 ns8 ns140mA-20V-100V5 pF4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-------
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006-e3yesActive1 (Unlimited)3EAR9920OhmMatte Tin (Sn)----100VMOSFET (Metal Oxide)DUALGULL WING--75mA-3--11330mW TaSingleENHANCEMENT MODE330mW8 nsP-Channel20 Ω @ 150mA, 10V3.5V @ 1mA50pF @ 25V75mA Ta8ns-10V±20V8 ns8 ns75mA-20V-100V5 pF1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free100V75mASWITCHING----
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006-e3yesActive1 (Unlimited)3EAR9914OhmMatte Tin (Sn)----60VMOSFET (Metal Oxide)DUALGULL WING260-90mA40---11330mW TaSingleENHANCEMENT MODE330mW8 nsP-Channel14 Ω @ 200mA, 10V3.5V @ 1mA50pF @ 18V90mA Ta8ns60V10V±20V8 ns8 ns90mA-3.5V20V-60V8 pF1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---SMD/SMT0.09A-60V-3.5 V
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