ZVP3306A

Diodes Incorporated ZVP3306A

Part Number:
ZVP3306A
Manufacturer:
Diodes Incorporated
Ventron No:
3070096-ZVP3306A
Description:
MOSFET P-CH 60V 160MA TO92-3
ECAD Model:
Datasheet:
ZVP3306A

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Specifications
Diodes Incorporated ZVP3306A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP3306A.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • Tolerance
    1%
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    470kOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated
    75V
  • Subcategory
    Other Transistors
  • Power Rating
    100mW
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -160mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Case Code (Metric)
    1608
  • Case Code (Imperial)
    0603
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • Turn On Delay Time
    8 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    14 Ω @ 200mA, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 18V
  • Current - Continuous Drain (Id) @ 25°C
    160mA Ta
  • Rise Time
    8ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    8 ns
  • Continuous Drain Current (ID)
    160mA
  • Threshold Voltage
    -3.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Feedback Cap-Max (Crss)
    8 pF
  • Height
    450μm
  • Length
    1.6mm
  • Width
    800μm
  • REACH SVHC
    Yes
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVP3306A Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 18V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 8 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3.5V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

ZVP3306A Features
a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 8 ns
a threshold voltage of -3.5V
a 60V drain to source voltage (Vdss)


ZVP3306A Applications
There are a lot of Diodes Incorporated
ZVP3306A applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZVP3306A More Descriptions
P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92
Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
Product Comparison
The three parts on the right have similar specifications to ZVP3306A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Tolerance
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Voltage - Rated
    Subcategory
    Power Rating
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Case Code (Metric)
    Case Code (Imperial)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage
    Current
    Transistor Application
    Termination
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Nominal Vgs
    View Compare
  • ZVP3306A
    ZVP3306A
    17 Weeks
    Surface Mount
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    1%
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    470kOhm
    Matte Tin (Sn)
    75V
    Other Transistors
    100mW
    -60V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    -160mA
    40
    3
    1608
    0603
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    8 ns
    P-Channel
    14 Ω @ 200mA, 10V
    3.5V @ 1mA
    50pF @ 18V
    160mA Ta
    8ns
    60V
    10V
    ±20V
    8 ns
    8 ns
    160mA
    -3.5V
    20V
    -60V
    8 pF
    450μm
    1.6mm
    800μm
    Yes
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP3310A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    -
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    20Ohm
    Matte Tin (Sn)
    -
    Other Transistors
    -
    -100V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    -140mA
    40
    3
    -
    -
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    8 ns
    P-Channel
    20 Ω @ 150mA, 10V
    3.5V @ 1mA
    50pF @ 25V
    140mA Ta
    8ns
    100V
    10V
    ±20V
    8 ns
    8 ns
    140mA
    -
    20V
    -100V
    5 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • ZVP3310FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    -
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    20Ohm
    Matte Tin (Sn)
    -
    -
    -
    -100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -75mA
    -
    3
    -
    -
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    8 ns
    P-Channel
    20 Ω @ 150mA, 10V
    3.5V @ 1mA
    50pF @ 25V
    75mA Ta
    8ns
    -
    10V
    ±20V
    8 ns
    8 ns
    75mA
    -
    20V
    -100V
    5 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    100V
    75mA
    SWITCHING
    -
    -
    -
    -
  • ZVP3306FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    -
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    14Ohm
    Matte Tin (Sn)
    -
    -
    -
    -60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -90mA
    40
    -
    -
    -
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    8 ns
    P-Channel
    14 Ω @ 200mA, 10V
    3.5V @ 1mA
    50pF @ 18V
    90mA Ta
    8ns
    60V
    10V
    ±20V
    8 ns
    8 ns
    90mA
    -3.5V
    20V
    -60V
    8 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    SMD/SMT
    0.09A
    -60V
    -3.5 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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