Diodes Incorporated ZVP2106GTA
- Part Number:
- ZVP2106GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478839-ZVP2106GTA
- Description:
- MOSFET P-CH 60V 450MA SOT223
- Datasheet:
- ZVP2106GTA
Diodes Incorporated ZVP2106GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP2106GTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance5Ohm
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-450mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds100pF @ 18V
- Current - Continuous Drain (Id) @ 25°C450mA Ta
- Rise Time15ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)450mA
- Threshold Voltage-3.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.45A
- Drain to Source Breakdown Voltage-60V
- Pulsed Drain Current-Max (IDM)4A
- Dual Supply Voltage-60V
- Nominal Vgs-3.5 V
- Height1.8mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVP2106GTA Description
This MOSFET is perfect for high efficiency power management applications since it is made to reduce on-state resistance while maintaining great switching performance.
ZVP2106GTA Features
Reduced On-Resistance
Quick Switching
Lead-Free Finish; complies with RoHS (Note 1 & 2)
Free of antimony and halogens. "Green" Appliance (Note 3)
AEC-Q101 Standards for High Reliability Qualified
ZVP2106GTA Applications Charge Switch
Converters, DC-DC
Quick Switching
Lead-Free Finish; complies with RoHS (Note 1 & 2)
Free of antimony and halogens. "Green" Appliance (Note 3)
AEC-Q101 Standards for High Reliability Qualified
ZVP2106GTA Applications Charge Switch
Converters, DC-DC
ZVP2106GTA More Descriptions
Trans MOSFET P-CH 60V 0.45A Automotive 4-Pin(3 Tab) SOT-223 T/R
ZVP2106G Series 60 V 5 Ohm P-Channel Enhancement Mode Vertical DMOS FET -SOT-223
MOSFET P-Channel 60V 0.45A SOT223 | Diodes Inc ZVP2106GTA
MOSFET, P SOT-223 REEL 1K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:0.45A; Resistance, Rds On:5ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-3.5V; Case Style:SOT-223; ;RoHS Compliant: Yes
ZVP2106G Series 60 V 5 Ohm P-Channel Enhancement Mode Vertical DMOS FET -SOT-223
MOSFET P-Channel 60V 0.45A SOT223 | Diodes Inc ZVP2106GTA
MOSFET, P SOT-223 REEL 1K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:0.45A; Resistance, Rds On:5ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-3.5V; Case Style:SOT-223; ;RoHS Compliant: Yes
The three parts on the right have similar specifications to ZVP2106GTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeQualification StatusDrain-source On Resistance-MaxConfigurationView Compare
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ZVP2106GTA17 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)4SMD/SMTEAR995OhmMatte Tin (Sn)-60VMOSFET (Metal Oxide)DUALGULL WING260-450mA404R-PDSO-G4112W TaSingleENHANCEMENT MODE2WDRAIN7 nsP-ChannelSWITCHING5 Ω @ 500mA, 10V3.5V @ 1mA100pF @ 18V450mA Ta15ns60V10V±20V15 ns12 ns450mA-3.5V20V0.45A-60V4A-60V-3.5 V1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-----
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-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3-EAR99-Matte Tin (Sn)-60VMOSFET (Metal Oxide)-WIRE260-280mA403R-PSIP-W311700mW TaSingleENHANCEMENT MODE700mW-7 nsP-ChannelSWITCHING5 Ω @ 500mA, 10V3.5V @ 1mA100pF @ 18V280mA Ta15ns60V10V±20V15 ns12 ns280mA-20V0.28A---------RoHS CompliantLead FreeunknownNot Qualified5Ohm-
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4-EAR99-MATTE TIN-200VMOSFET (Metal Oxide)DUALGULL WING260-300mA404R-PDSO-G4112W Ta-ENHANCEMENT MODE2WDRAIN7 nsP-ChannelSWITCHING25 Ω @ 150mA, 10V3.5V @ 1mA100pF @ 25V200mA Ta7ns200V10V-15 ns12 ns200mA-20V0.3A-200V---1.65mm6.7mm3.7mm--RoHS CompliantLead FreeunknownNot Qualified-SINGLE
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3-Obsolete1 (Unlimited)4-EAR99-MATTE TIN-100VMOSFET (Metal Oxide)DUALGULL WING260-350mA404R-PDSO-G4112W Ta-ENHANCEMENT MODE2WDRAIN7 nsP-ChannelSWITCHING8 Ω @ 375mA, 10V3.5V @ 1mA100pF @ 25V310mA Ta15ns100V10V±20V15 ns12 ns310mA-20V--100V3A-------RoHS CompliantLead FreeunknownNot Qualified8OhmSINGLE
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