Transphorm TPH3212PS

Name: TPH3212PS
Brand: Transphorm
SKU: 2479104-TPH3212PS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TPH3212PS

Manufacturer:: Transphorm

Ventron No:: 2479104-TPH3212PS

Description:: GAN FET 650V 27A TO220

ECAD Model:

Datasheet:: TPH3212PS

Specifications

Transphorm TPH3212PS technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3212PS.

Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2017
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
GaNFET (Cascode Gallium Nitride FET)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
104W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
72m Ω @ 17A, 8V
Vgs(th) (Max) @ Id
2.6V @ 400uA
Input Capacitance (Ciss) (Max) @ Vds
1130pF @ 400V
Current - Continuous Drain (Id) @ 25°C
27A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 8V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±18V
RoHS Status
RoHS Compliant

Description

TPH3212PS Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1130pF @ 400V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

TPH3212PS Features
a 650V drain to source voltage (Vdss)

TPH3212PS Applications
There are a lot of Transphorm
TPH3212PS applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

TPH3212PS More Descriptions

GANFET N-CH 650V 27A TO220AB

Product Comparison

The three parts on the right have similar specifications to TPH3212PS.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Supplier Device Package

Series

View Compare
TPH3212PS

Transphorm

12 Weeks

Through Hole

TO-220-3

-55°C~150°C TJ

Tube

2017

yes

Active

1 (Unlimited)

GaNFET (Cascode Gallium Nitride FET)

NOT SPECIFIED

unknown

NOT SPECIFIED

104W Tc

N-Channel

72m Ω @ 17A, 8V

2.6V @ 400uA

1130pF @ 400V

27A Tc

14nC @ 8V

650V

10V

±18V

RoHS Compliant

-

-

-
TPH3206LD

Transphorm

14 Weeks

Surface Mount

4-PowerDFN

-55°C~175°C TJ

Tube

2016

yes

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

-

unknown

-

96W Tc

N-Channel

180m Ω @ 11A, 8V

2.6V @ 500μA

760pF @ 480V

17A Tc

9.3nC @ 4.5V

600V

10V

±18V

Non-RoHS Compliant

-

-

TPH3212PS vs TPH3206LD
TPH3R003PL,LQ

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

8-PowerVDFN

175°C TJ

Tape & Reel (TR)

2016

-

Active

1 (Unlimited)

MOSFET (Metal Oxide)

-

-

-

90W Tc

N-Channel

4.2mOhm @ 44A, 4.5V

2.1V @ 300μA

3825pF @ 15V

88A Tc

50nC @ 10V

30V

4.5V 10V

±20V

RoHS Compliant

8-SOP Advance (5x5)

U-MOSIX-H

TPH3212PS vs TPH3R003PL,LQ
TPH3206PSB

Transphorm

12 Weeks

Through Hole

TO-220-3

-55°C~150°C TJ

Tube

2016

-

Active

1 (Unlimited)

GaNFET (Gallium Nitride)

NOT SPECIFIED

unknown

NOT SPECIFIED

81W Tc

N-Channel

180m Ω @ 10A, 8V

2.6V @ 500μA

720pF @ 480V

16A Tc

6.2nC @ 4.5V

650V

10V

±18V

RoHS Compliant

-

-

TPH3212PS vs TPH3206PSB