Bourns Inc. TIP35B-S
- Part Number:
- TIP35B-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469599-TIP35B-S
- Description:
- TRANS NPN 80V 25A
- Datasheet:
- TIP35 Series
Bourns Inc. TIP35B-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. TIP35B-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-218-3
- Number of Pins3
- Supplier Device PackageSOT-93
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation3.5W
- Base Part NumberTIP35
- Number of Elements1
- PolarityNPN
- Power Dissipation125W
- Power - Max3.5W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)4V
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 15A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 5A, 25A
- Collector Emitter Breakdown Voltage80V
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)25A
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
TIP35B-S Overview
In this device, the DC current gain is 10 @ 15A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 5A, 25A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package SOT-93 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 25A volts.
TIP35B-S Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
TIP35B-S Applications
There are a lot of Bourns Inc.
TIP35B-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 15A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 5A, 25A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package SOT-93 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 25A volts.
TIP35B-S Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
TIP35B-S Applications
There are a lot of Bourns Inc.
TIP35B-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP35B-S More Descriptions
Trans GP BJT NPN 80V 25A 3-Pin(3 Tab) SOT-93
NPN TRANSISTOR 80V 25A
NPN TRANSISTOR 80V 25A
The three parts on the right have similar specifications to TIP35B-S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsPolarityPower DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Base Voltage (VCBO)Emitter Base Voltage (VEBO)RoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeSurface MountWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyCollector Emitter Saturation VoltagehFE MinHeightLengthWidthRadiation HardeningLead FreeContact PlatingREACH SVHCView Compare
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TIP35B-SThrough HoleThrough HoleTO-218-33SOT-93-65°C~150°C TJTube1993Obsolete1 (Unlimited)150°C-65°C3.5WTIP351NPN125W3.5WNPN4V25A10 @ 15A 4V1mA4V @ 5A, 25A80V80V25A120V5VROHS3 Compliant------------------------------------------------
-
------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A---------------------------------
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-Through HoleTO-220-33--65°C~150°C TJTube2005Active1 (Unlimited)--2WTIP311-2W-NPN40V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A40V--40V5VROHS3 Compliant--------------ACTIVE (Last Updated: 3 days ago)2 WeeksNO4.535924gSILICONe3yes3EAR99Tin (Sn)Other Transistors40V2603A3MHz403SingleCOLLECTORSWITCHING3MHzNPNTO-220AB3MHz1.2V2515.748mm10.2616mm4.826mmNoLead Free--
-
-Through HoleTO-220-33--65°C~150°C TJTube2005Active1 (Unlimited)--2WTIP311-2W-NPN100V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A100V--100V5VROHS3 Compliant--------------ACTIVE (Last Updated: 3 days ago)8 WeeksNO4.535924gSILICONe3yes3EAR99-Other Transistors100V2603A3MHz403SingleCOLLECTORSWITCHING3MHzNPNTO-220AB3MHz1.2V259.28mm10.28mm4.82mmNoLead FreeTinNo SVHC
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