Fairchild/ON Semiconductor TIP31CTU
- Part Number:
- TIP31CTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585100-TIP31CTU
- Description:
- TRANS NPN 100V 3A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP29,30 A,B,C
Fairchild/ON Semiconductor TIP31CTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP31CTU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.214g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation2W
- Current Rating3A
- Frequency3MHz
- Base Part NumberTIP31
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min10
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
TIP31CTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
TIP31CTU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31CTU Applications
There are a lot of ON Semiconductor
TIP31CTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
TIP31CTU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31CTU Applications
There are a lot of ON Semiconductor
TIP31CTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31CTU More Descriptions
TIP Series NPN 40 W 100 V 3 A Flange Mount Epitaxial Silicon Transistor-TO-220-3
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANSISTOR, BIPOL, NPN, 100V, TO-220AB-3;
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANSISTOR, BIPOL, NPN, 100V, TO-220AB-3;
The three parts on the right have similar specifications to TIP31CTU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP31CTULAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-220-331.214gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors100V2W3A3MHzTIP311Single2WSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz100V100V5V106.35mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead Free---------------------------
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---Through HoleTO-220-3--SILICON150°C TJTube-e3yesObsolete1 (Unlimited)3-MATTE TIN------1--SWITCHING-NPNNPN--10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A-3MHz---------ROHS3 Compliant-NOSINGLENOT APPLICABLENOT APPLICABLE3R-PSFM-T3COMMERCIALSINGLE2W60V3A3MHz--------------
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--------------------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A
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--------------------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A
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