ON Semiconductor TIP31G
- Part Number:
- TIP31G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3553765-TIP31G
- Description:
- TRANS NPN 40V 3A TO220AB
- Datasheet:
- TIP31G
ON Semiconductor TIP31G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP31G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP31
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP31G Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 3A volts is possible.
TIP31G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31G Applications
There are a lot of ON Semiconductor
TIP31G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 3A volts is possible.
TIP31G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31G Applications
There are a lot of ON Semiconductor
TIP31G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31G More Descriptions
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TIP Series 60 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Trans GP BJT NPN 40V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
NPN Bipolar Power Transistor 40 V
TRANSISTOR, NPN, 40V, 3A, TO-220
40V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~ 150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:3A; Power Dissipation Pd:40W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:3Mhz; Dc Current Gain Hfe:50Hfe; Msl:- Rohs Compliant: Yes
TIP Series 60 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Trans GP BJT NPN 40V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
NPN Bipolar Power Transistor 40 V
TRANSISTOR, NPN, 40V, 3A, TO-220
40V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~ 150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:3A; Power Dissipation Pd:40W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:3Mhz; Dc Current Gain Hfe:50Hfe; Msl:- Rohs Compliant: Yes
The three parts on the right have similar specifications to TIP31G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeTerminal PositionJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Contact PlatingREACH SVHCView Compare
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TIP31GACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN40V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A40V3MHz1.2V40V5V2515.748mm10.2616mm4.826mmNoROHS3 CompliantLead Free-------------------------
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--Through HoleTO-220-3NO--SILICON150°C TJTube-e3yesObsolete1 (Unlimited)3-MATTE TIN---NOT APPLICABLE--NOT APPLICABLE-31---SWITCHING-NPNNPN--10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A-3MHz--------ROHS3 Compliant-SINGLER-PSFM-T3COMMERCIALSINGLE2W60V3A3MHz----------------
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-------------------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A--
-
ACTIVE (Last Updated: 3 days ago)8 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99-Other Transistors100V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz1.2V100V5V259.28mm10.28mm4.82mmNoROHS3 CompliantLead Free----------------------TinNo SVHC
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