ON Semiconductor TIP31A
- Part Number:
- TIP31A
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069198-TIP31A
- Description:
- TRANS NPN 60V 3A TO220AB
- Datasheet:
- TIP31/A/B/C TO220B03 Pkg Drawing
ON Semiconductor TIP31A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP31A.
- Voltage - Collector Emitter Breakdown (Max):60V
- Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
- Transistor Type:NPN
- Supplier Device Package:TO-220AB
- Series:-
- Power - Max:2W
- Packaging:Tube
- Package / Case:TO-220-3
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
- Current - Collector Cutoff (Max):300µA
- Current - Collector (Ic) (Max):3A
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor TIP31A.
TIP31A More Descriptions
TIP31A Series NPN 60 V 3 A Flange Mount Power Transistor - TO-220
Transistor GP BJT NPN 60V 3A 3-Pin TO-220 Tube - Rail/Tube
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN TIP31/TIP31A SGS THOMSON Ampere=3 Volt=100 TO220
60V 40W 3A 10@3A,4V 1.2V@3A,375mA NPN 150¡æ@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
Power Bipolar, NPN, 4V, 375mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; DC Current Gain Min (hfe):10; Collector Current @ hfe:3µA; DC Collector Current:3A; Leaded Process Compatible:Yes; DC Current Gain Max (hfe):50 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:50; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:GP; Collector Emitter Voltage Vces:1.2V; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:1A; Device Marking:TIP31A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Hfe Min:25; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:2W; Power Dissipation Ptot Max:40W; Termination Type:Through Hole; Voltage Vcbo:60V
Transistor GP BJT NPN 60V 3A 3-Pin TO-220 Tube - Rail/Tube
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN TIP31/TIP31A SGS THOMSON Ampere=3 Volt=100 TO220
60V 40W 3A 10@3A,4V 1.2V@3A,375mA NPN 150¡æ@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
Power Bipolar, NPN, 4V, 375mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; DC Current Gain Min (hfe):10; Collector Current @ hfe:3µA; DC Collector Current:3A; Leaded Process Compatible:Yes; DC Current Gain Max (hfe):50 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:50; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:GP; Collector Emitter Voltage Vces:1.2V; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:1A; Device Marking:TIP31A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Hfe Min:25; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:2W; Power Dissipation Ptot Max:40W; Termination Type:Through Hole; Voltage Vcbo:60V
The three parts on the right have similar specifications to TIP31A.
-
ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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TIP31A60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A---------------------------------------------------
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--------------LAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-220-331.214gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors100V2W3A3MHzTIP311Single2WSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz100V100V5V106.35mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead Free
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60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A---------------------------------------------------
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100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A--------------------------------------------------
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