Central Semiconductor Corp TIP36C
- Part Number:
- TIP36C
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 3553956-TIP36C
- Description:
- TRANS GENERAL PURPOSE TO-218
- Datasheet:
- TIP36C
Central Semiconductor Corp TIP36C technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp TIP36C.
- Voltage - Collector Emitter Breakdown (Max):100V
- Vce Saturation (Max) @ Ib, Ic:-
- Transistor Type:PNP
- Supplier Device Package:TO-218
- Series:-
- Power - Max:125W
- Packaging:Bulk
- Package / Case:TO-218-3
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 15A, 4V
- Current - Collector Cutoff (Max):-
- Current - Collector (Ic) (Max):25A
Images are for reference only.See Product Specifications for product details.If you are interested to buy Central Semiconductor TIP36C.
TIP36C More Descriptions
100V 125W 10@15A,4V 25A PNP TO-247 Bipolar Transistors - BJT ROHS
TIP36C Series 100 V 25 A PNP Complementary Power Transistor - TO-247
Transistor GP BJT PNP 100V 25A 3-Pin TO-247 Tube - Rail/Tube
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Power
TRANSISTOR, PNP, 100V, 25A, TO247; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 125W; DC Collector Current: 25A; DC Current Gain hFE: 50hFE; Transisto
Bipolar Transistor, Pnp, -100V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Stmicroelectronics TIP36C.
TIP36C Series 100 V 25 A PNP Complementary Power Transistor - TO-247
Transistor GP BJT PNP 100V 25A 3-Pin TO-247 Tube - Rail/Tube
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Power
TRANSISTOR, PNP, 100V, 25A, TO247; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 125W; DC Collector Current: 25A; DC Current Gain hFE: 50hFE; Transisto
Bipolar Transistor, Pnp, -100V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Stmicroelectronics TIP36C.
The three parts on the right have similar specifications to TIP36C.
-
ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeView Compare
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TIP36C100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A------------------------------------------------------
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60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A-----------------------------------------------------
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--------------ACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN40V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A40V3MHz1.2V40V5V2515.748mm10.2616mm4.826mmNoROHS3 CompliantLead Free
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60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A-----------------------------------------------------
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