Fairchild/ON Semiconductor TIP31ATU
- Part Number:
- TIP31ATU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585495-TIP31ATU
- Description:
- TRANS NPN 60V 3A TO-220
- Datasheet:
- TIP31/A/B/C TO220B03 Pkg Drawing
Fairchild/ON Semiconductor TIP31ATU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP31ATU.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)3A
- Transition Frequency3MHz
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
TIP31ATU Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
TIP31ATU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
TIP31ATU Applications
There are a lot of Rochester Electronics, LLC
TIP31ATU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
TIP31ATU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
TIP31ATU Applications
There are a lot of Rochester Electronics, LLC
TIP31ATU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31ATU More Descriptions
Bipolar (BJT) Transistor NPN 60V 3A 3MHz 2W Through Hole TO-220-3 - Rail/Tube
NPN Bipolar Power Transistor
Trans GP BJT NPN 60V 3A 3-Pin(3 Tab) TO-220AB Rail
NPN Bipolar Power Transistor
Trans GP BJT NPN 60V 3A 3-Pin(3 Tab) TO-220AB Rail
The three parts on the right have similar specifications to TIP31ATU.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningLead FreeView Compare
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TIP31ATUThrough HoleTO-220-3NOSILICON150°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINSINGLENOT APPLICABLENOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE2WSWITCHINGNPNNPN10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A60V3A3MHz3MHzROHS3 Compliant-------------------------------------------
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---------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A----------------------------
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---------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A----------------------------
-
Through HoleTO-220-3NOSILICON-65°C~150°C TJTubee3yesActive1 (Unlimited)3Tin (Sn)-260403--1--SWITCHINGNPNNPN10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A--3MHz-ROHS3 Compliant--------------ACTIVE (Last Updated: 3 days ago)2 Weeks34.535924g2005EAR99Other Transistors40V2W3A3MHzTIP31Single2WCOLLECTOR3MHz40V3A40V1.2V40V5V2515.748mm10.2616mm4.826mmNoLead Free
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