ON Semiconductor TIP31CG
- Part Number:
- TIP31CG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3553743-TIP31CG
- Description:
- TRANS NPN 100V 3A TO220AB
- Datasheet:
- TIP31CG
ON Semiconductor TIP31CG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP31CG.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP31
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height9.28mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP31CG Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
TIP31CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31CG Applications
There are a lot of ON Semiconductor
TIP31CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
TIP31CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31CG Applications
There are a lot of ON Semiconductor
TIP31CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31CG More Descriptions
ON Semi TIP31CG NPN Bipolar Transistor, 3 A, 100 V, 3-Pin TO-220AB
Trans General Purpose BJT NPN 100 Volt 3A 3-Pin (3 Tab) TO-220AB Rail
TIP Series 100 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor GP BJT NPN 100V 3A 3-Pin TO-220AB Rail
Trans GP BJT NPN 100V 3A 2000mW 3-Pin(3 Tab) TO-220 Tube
Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; DC Current Gain hFE Min:10hFE; MSL:-RoHS Compliant: Yes
Trans General Purpose BJT NPN 100 Volt 3A 3-Pin (3 Tab) TO-220AB Rail
TIP Series 100 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor GP BJT NPN 100V 3A 3-Pin TO-220AB Rail
Trans GP BJT NPN 100V 3A 2000mW 3-Pin(3 Tab) TO-220 Tube
Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; DC Current Gain hFE Min:10hFE; MSL:-RoHS Compliant: Yes
The three parts on the right have similar specifications to TIP31CG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Terminal FinishTerminal PositionJESD-30 CodeQualification StatusConfigurationFrequency - TransitionMax Breakdown VoltageView Compare
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TIP31CGACTIVE (Last Updated: 3 days ago)8 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Other Transistors100V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz1.2V100V5V259.28mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free----------------
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---Through HoleTO-218-3-3---65°C~150°C TJTube1993--Obsolete1 (Unlimited)----3.5W----TIP34-1-80W----PNP60V10A20 @ 3A 4V700μA-4V @ 2.5A, 10A60V--100V5V------ROHS3 Compliant-Through HoleSOT-93150°C-65°CPNP3.5W60V10A-------
-
---Through HoleTO-220-3NO--SILICON150°C TJTube-e3yesObsolete1 (Unlimited)3----NOT APPLICABLE--NOT APPLICABLE-31---SWITCHING-NPNNPN--10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A-3MHz---------ROHS3 Compliant------2W60V3AMATTE TINSINGLER-PSFM-T3COMMERCIALSINGLE3MHz-
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LAST SHIPMENTS (Last Updated: 2 days ago)6 Weeks-Through HoleTO-220-3-31.214gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Other Transistors100V2W-3A3MHz-TIP31-1Single2W-SWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz-100V5V106.35mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead FreeThrough Hole-------Tin (Sn)-----100V
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