STMicroelectronics STW20N90K5

Name: STW20N90K5
Brand: STMicroelectronics
SKU: 2483516-STW20N90K5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW20N90K5

Manufacturer:: STMicroelectronics

Ventron No:: 2483516-STW20N90K5

Description:: N-CHANNEL 900 V, 0.24 OHM TYP.,

ECAD Model:

Datasheet:: STW20N90K5

Specifications

STMicroelectronics STW20N90K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW20N90K5.

Factory Lead Time
17 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ K5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Base Part Number
STW20N
Power Dissipation-Max
250W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 100V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Drain to Source Voltage (Vdss)
900V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
RoHS Status
RoHS Compliant

Description

STW20N90K5 Description STW20N90K5 MOSFET is built on well-established silicon processes that supply designers with an array of devices. STW20N90K5 Power MOSFET comes in a variety of through-hole and surface mount packaging, with standard footprints, for easy design. STW20N90K5 STMicroelectronics is utilized to control High-Frequency Synchronous Buck Converters for computer Processor Power, High Frequency Isolated DC-DC Convertors with Synchronous Rectification Telecom and Industrial use. STW20N90K5 Features Zener-protected Industry’s best FoM Ultra-low gate charge Industry’s lowest RDS(on) x area 100% avalanche tested STW20N90K5 Applications Reverse Polarity Switch DC/DC Conversion High Frequency Isolated DC-DC Converters with Synchronous Rectification Telecom and Industrial Use

STW20N90K5 More Descriptions

N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package
Trans MOSFET N-CH 900V 20A 3-Pin(3 Tab) TO-247 Tube
Mosfet, N-Ch, 900V, 20A, To-247-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STW20N90K5

Product Comparison

The three parts on the right have similar specifications to STW20N90K5.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Base Part Number

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lifecycle Status

Contact Plating

Mount

Number of Pins

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Resistance

Subcategory

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Pbfree Code

Terminal Finish

Additional Feature

JESD-30 Code

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

View Compare
STW20N90K5

STMicroelectronics

17 Weeks

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

MDmesh™ K5

Active

1 (Unlimited)

MOSFET (Metal Oxide)

STW20N

250W Tc

N-Channel

250m Ω @ 10A, 10V

5V @ 100μA

1500pF @ 100V

20A Tc

40nC @ 10V

900V

10V

±30V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW26NM60N

STMicroelectronics

16 Weeks

Through Hole

TO-247-3

150°C TJ

Tube

MDmesh™ II

Active

1 (Unlimited)

MOSFET (Metal Oxide)

STW26N

140W Tc

N-Channel

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

-

10V

±30V

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

Tin

Through Hole

3

SILICON

e3

3

EAR99

165mOhm

FET General Purpose Power

3

1

Single

ENHANCEMENT MODE

140W

13 ns

SWITCHING

25ns

50 ns

85 ns

20A

3V

25V

600V

80A

20.15mm

15.75mm

5.15mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

STW20N90K5 vs STW26NM60N
STW20NM65N

STMicroelectronics

-

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

MDmesh™ II

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

STW20N

160W Tc

N-Channel

190m Ω @ 9.5A, 10V

4V @ 250μA

2500pF @ 50V

19A Tc

70nC @ 10V

-

10V

±25V

ROHS3 Compliant

-

-

Through Hole

-

SILICON

e3/e1

3

-

-

FET General Purpose Power

3

1

Single

ENHANCEMENT MODE

160W

25 ns

SWITCHING

10ns

20 ns

80 ns

19A

-

25V

650V

76A

-

-

-

-

No

-

yes

MATTE TIN/TIN SILVER COPPER

AVALANCHE RATED

R-PSFM-T3

0.19Ohm

500 mJ

-

-

-

STW20N90K5 vs STW20NM65N
STW24NK55Z

STMicroelectronics

-

Through Hole

TO-247-3

150°C TJ

Tube

SuperMESH™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

STW24N

285W Tc

N-Channel

220m Ω @ 11.5A, 10V

4.5V @ 100μA

4397.5pF @ 25V

23A Tc

130nC @ 10V

-

10V

±30V

ROHS3 Compliant

-

-

Through Hole

-

SILICON

-

3

-

-

FET General Purpose Power

3

1

Single

ENHANCEMENT MODE

285W

-

SWITCHING

35ns

88 ns

136 ns

23A

-

30V

550V

92A

-

-

-

-

-

Lead Free

-

-

-

R-PSFM-T3

0.22Ohm

400 mJ

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

STW20N90K5 vs STW24NK55Z