STW14NK60Z

STMicroelectronics STW14NK60Z

Part Number:
STW14NK60Z
Manufacturer:
STMicroelectronics
Ventron No:
2488015-STW14NK60Z
Description:
MOSFET N-CH 600V 13.5A TO-247
ECAD Model:
Datasheet:
STW14NK60Z

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Specifications
STMicroelectronics STW14NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW14NK60Z.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    13.5A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STW14N
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    160W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    160W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    500m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2220pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    13.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    75nC @ 10V
  • Rise Time
    18ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    62 ns
  • Continuous Drain Current (ID)
    13.5A
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    12A
  • Drain-source On Resistance-Max
    0.5Ohm
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    54A
  • Avalanche Energy Rating (Eas)
    300 mJ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STW14NK60Z Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 2220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 12A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 62 ns.Its maximum pulsed drain current is 54A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STW14NK60Z Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 13.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 54A.


STW14NK60Z Applications
There are a lot of STMicroelectronics
STW14NK60Z applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STW14NK60Z More Descriptions
N-Channel 600V - 0.45 Ohm - 12A - TO-247 Zener-Protected SuperMESH(TM) POWER MOSFET
Power MOSFET Transistors N-Ch 600 Volt 13.5A
MOSFET N-CH 600V 13.5A TO247-3
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Product Comparison
The three parts on the right have similar specifications to STW14NK60Z.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Resistance
    Radiation Hardening
    Lifecycle Status
    Factory Lead Time
    Number of Pins
    Turn On Delay Time
    Threshold Voltage
    Height
    Length
    Width
    REACH SVHC
    View Compare
  • STW14NK60Z
    STW14NK60Z
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    13.5A
    NOT SPECIFIED
    STW14N
    3
    R-PSFM-T3
    Not Qualified
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    N-Channel
    SWITCHING
    500m Ω @ 6A, 10V
    4.5V @ 100μA
    2220pF @ 25V
    13.5A Tc
    75nC @ 10V
    18ns
    10V
    ±30V
    13 ns
    62 ns
    13.5A
    TO-247AC
    30V
    12A
    0.5Ohm
    600V
    54A
    300 mJ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STW14NM65N
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    150°C TJ
    Tube
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    -
    NOT SPECIFIED
    STW14N
    3
    R-PSFM-T3
    Not Qualified
    1
    125W Tc
    Single
    ENHANCEMENT MODE
    125W
    N-Channel
    SWITCHING
    380m Ω @ 6A, 10V
    4V @ 250μA
    1300pF @ 50V
    12A Tc
    45nC @ 10V
    13ns
    10V
    ±25V
    20 ns
    55 ns
    12A
    -
    25V
    -
    -
    650V
    48A
    300 mJ
    ROHS3 Compliant
    Lead Free
    380mOhm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STW13NM50N
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    -
    Obsolete
    1 (Unlimited)
    3
    -
    MATTE TIN/TIN SILVER COPPER
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STW13N
    3
    R-PSFM-T3
    -
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    N-Channel
    SWITCHING
    320m Ω @ 6A, 10V
    4V @ 250μA
    960pF @ 50V
    12A Tc
    30nC @ 10V
    15ns
    10V
    ±25V
    10 ns
    40 ns
    12A
    -
    25V
    -
    -
    500V
    48A
    200 mJ
    ROHS3 Compliant
    Lead Free
    320mOhm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STW10NK80Z
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    FET General Purpose Power
    800V
    MOSFET (Metal Oxide)
    -
    -
    9A
    -
    STW10N
    3
    -
    -
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    N-Channel
    SWITCHING
    900m Ω @ 4.5A, 10V
    4.5V @ 100μA
    2180pF @ 25V
    9A Tc
    72nC @ 10V
    20ns
    10V
    ±30V
    17 ns
    65 ns
    9A
    -
    30V
    9A
    -
    800V
    -
    290 mJ
    ROHS3 Compliant
    Lead Free
    900mOhm
    No
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    3
    30 ns
    3.75V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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