STMicroelectronics STW14NK60Z
- Part Number:
- STW14NK60Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488015-STW14NK60Z
- Description:
- MOSFET N-CH 600V 13.5A TO-247
- Datasheet:
- STW14NK60Z
STMicroelectronics STW14NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW14NK60Z.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating13.5A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTW14N
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max160W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation160W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs500m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2220pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13.5A Tc
- Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
- Rise Time18ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time62 ns
- Continuous Drain Current (ID)13.5A
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)12A
- Drain-source On Resistance-Max0.5Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)54A
- Avalanche Energy Rating (Eas)300 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW14NK60Z Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 2220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 12A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 62 ns.Its maximum pulsed drain current is 54A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STW14NK60Z Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 13.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 54A.
STW14NK60Z Applications
There are a lot of STMicroelectronics
STW14NK60Z applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 2220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 12A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 62 ns.Its maximum pulsed drain current is 54A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STW14NK60Z Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 13.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 54A.
STW14NK60Z Applications
There are a lot of STMicroelectronics
STW14NK60Z applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STW14NK60Z More Descriptions
N-Channel 600V - 0.45 Ohm - 12A - TO-247 Zener-Protected SuperMESH(TM) POWER MOSFET
Power MOSFET Transistors N-Ch 600 Volt 13.5A
MOSFET N-CH 600V 13.5A TO247-3
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Power MOSFET Transistors N-Ch 600 Volt 13.5A
MOSFET N-CH 600V 13.5A TO247-3
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
The three parts on the right have similar specifications to STW14NK60Z.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeResistanceRadiation HardeningLifecycle StatusFactory Lead TimeNumber of PinsTurn On Delay TimeThreshold VoltageHeightLengthWidthREACH SVHCView Compare
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STW14NK60ZThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)AVALANCHE RATEDFET General Purpose Power600VMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant13.5ANOT SPECIFIEDSTW14N3R-PSFM-T3Not Qualified1160W TcSingleENHANCEMENT MODE160WN-ChannelSWITCHING500m Ω @ 6A, 10V4.5V @ 100μA2220pF @ 25V13.5A Tc75nC @ 10V18ns10V±30V13 ns62 ns13.5ATO-247AC30V12A0.5Ohm600V54A300 mJROHS3 CompliantLead Free------------
-
Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3-Tin (Sn)-FET General Purpose Power-MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant-NOT SPECIFIEDSTW14N3R-PSFM-T3Not Qualified1125W TcSingleENHANCEMENT MODE125WN-ChannelSWITCHING380m Ω @ 6A, 10V4V @ 250μA1300pF @ 50V12A Tc45nC @ 10V13ns10V±25V20 ns55 ns12A-25V--650V48A300 mJROHS3 CompliantLead Free380mOhm----------
-
Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeMDmesh™ II-Obsolete1 (Unlimited)3-MATTE TIN/TIN SILVER COPPER-FET General Purpose Power-MOSFET (Metal Oxide)----STW13N3R-PSFM-T3-1100W TcSingleENHANCEMENT MODE100WN-ChannelSWITCHING320m Ω @ 6A, 10V4V @ 250μA960pF @ 50V12A Tc30nC @ 10V15ns10V±25V10 ns40 ns12A-25V--500V48A200 mJROHS3 CompliantLead Free320mOhmNo---------
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Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Tin (Sn)-FET General Purpose Power800VMOSFET (Metal Oxide)--9A-STW10N3--1160W TcSingleENHANCEMENT MODE160WN-ChannelSWITCHING900m Ω @ 4.5A, 10V4.5V @ 100μA2180pF @ 25V9A Tc72nC @ 10V20ns10V±30V17 ns65 ns9A-30V9A-800V-290 mJROHS3 CompliantLead Free900mOhmNoACTIVE (Last Updated: 8 months ago)12 Weeks330 ns3.75V20.15mm15.75mm5.15mmNo SVHC
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