STMicroelectronics STP9NK70ZFP
- Part Number:
- STP9NK70ZFP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070435-STP9NK70ZFP
- Description:
- MOSFET N-CH 700V 7.5A TO-220FP
- ECAD Model:
-
- Datasheet:
- STP9NK70ZFP
STMicroelectronics STP9NK70ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP9NK70ZFP.
- Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP9N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max35W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation35W
- Case ConnectionISOLATED
- Turn On Delay Time22 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.2 Ω @ 4A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1370pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.5A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
- Rise Time17ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)4A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)7.5A
- Drain to Source Breakdown Voltage700V
- Height16.4mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STP9NK70ZFP Description
The well-known strip-based PowerMESHTM layout of ST is greatly optimized to produce the SuperMESHTM series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. These series complete ST's line of high voltage MOSFETs, which includes the ground-breaking MDmeshTM devices.
STP9NK70ZFP Features
TYPICAL RDS(on) = 1.0 ?
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
STP9NK70ZFP Applications
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
The well-known strip-based PowerMESHTM layout of ST is greatly optimized to produce the SuperMESHTM series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. These series complete ST's line of high voltage MOSFETs, which includes the ground-breaking MDmeshTM devices.
STP9NK70ZFP Features
TYPICAL RDS(on) = 1.0 ?
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
STP9NK70ZFP Applications
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
STP9NK70ZFP More Descriptions
N-Channel 700V - 1Ohm - 7.5A - TO-220FP Zener-Protected SuperMesh(TM) POWER MOSFET
Trans MOSFET N-CH 700V 7.5A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N Channel, 700V, 7.5A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP9NK70ZFP
Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 700V, 7.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 7.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 700V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Trans MOSFET N-CH 700V 7.5A 3-Pin(3 Tab) TO-220FP Tube
Mosfet, N Channel, 700V, 7.5A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP9NK70ZFP
Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 700V, 7.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 7.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 700V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STP9NK70ZFP.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusResistanceDrain to Source Voltage (Vdss)Lead FreeVoltage - Rated DCPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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STP9NK70ZFPACTIVE (Last Updated: 2 weeks ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STP9N3135W TcSingleENHANCEMENT MODE35WISOLATED22 nsN-ChannelSWITCHING1.2 Ω @ 4A, 10V4.5V @ 100μA1370pF @ 25V7.5A Tc68nC @ 10V17ns10V±30V13 ns45 ns4A3.75VTO-220AB30V7.5A700V16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant-------------- -
--Through HoleThrough HoleTO-220-33-150°C TJTubeMDmesh™ II-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)STP9N--60W TcSingle---7 nsN-Channel-790m Ω @ 2.5A, 10V4V @ 250μA365pF @ 50V5.6A Tc14nC @ 10V4.4ns10V±25V8.8 ns25 ns5.6A--25V-400V----NoROHS3 Compliant-------------
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-33-150°C TJTubeMDmesh™ II Plus-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)STP9N--60W TcSingle-60W-8.8 nsN-Channel-780m Ω @ 3A, 10V4V @ 250μA320pF @ 100V5.5A Tc10nC @ 10V7.5ns10V±25V13.5 ns22 ns5.5A--25V-650V15.75mm10.4mm4.6mm-NoROHS3 Compliant780mOhm600VLead Free----------
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--Through HoleThrough HoleTO-220-3-SILICON-55°C~150°C TJTubeSuperFREDmesh™e3Obsolete1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP9N31125W TcSingleENHANCEMENT MODE125W--N-ChannelSWITCHING950m Ω @ 3.5A, 10V4.5V @ 100μA1110pF @ 25V7A Tc53nC @ 10V17ns10V±30V15 ns42 ns7A-TO-220AB30V7A600V-----ROHS3 Compliant--Lead Free600VNOT SPECIFIEDnot_compliant7ANOT SPECIFIEDR-PSFM-T3Not Qualified0.95Ohm28A235 mJ
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