STP9NM60N

STMicroelectronics STP9NM60N

Part Number:
STP9NM60N
Manufacturer:
STMicroelectronics
Ventron No:
3070487-STP9NM60N
Description:
MOSFET N-CH 600V 6.5A TO-220
ECAD Model:
Datasheet:
STP9NM60N

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Specifications
STMicroelectronics STP9NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP9NM60N.
  • Lifecycle Status
    NRND (Last Updated: 7 months ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP9N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Turn On Delay Time
    28 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    745m Ω @ 3.25A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    452pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    6.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17.4nC @ 10V
  • Rise Time
    23ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    26.7 ns
  • Turn-Off Delay Time
    52.5 ns
  • Continuous Drain Current (ID)
    6.5A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain-source On Resistance-Max
    0.745Ohm
  • Pulsed Drain Current-Max (IDM)
    26A
  • DS Breakdown Voltage-Min
    600V
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP9NM60N Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 452pF @ 50V.This device conducts a continuous drain current (ID) of 6.5A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 52.5 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 26A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STP9NM60N Features
a continuous drain current (ID) of 6.5A
the turn-off delay time is 52.5 ns
based on its rated peak drain current 26A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)


STP9NM60N Applications
There are a lot of STMicroelectronics
STP9NM60N applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STP9NM60N More Descriptions
Single N-Channel 600 V 0.7 Ohm 17.4 nC 70 W MDmesh™ II Power MOSFET -TO-220-3
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CH, 600V, 6.5A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.63ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP9NM60N.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Resistance
    Case Connection
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Weight
    Peak Reflow Temperature (Cel)
    View Compare
  • STP9NM60N
    STP9NM60N
    NRND (Last Updated: 7 months ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    MDmesh™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP9N
    3
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    28 ns
    N-Channel
    SWITCHING
    745m Ω @ 3.25A, 10V
    4V @ 250μA
    452pF @ 50V
    6.5A Tc
    17.4nC @ 10V
    23ns
    600V
    10V
    ±25V
    26.7 ns
    52.5 ns
    6.5A
    3V
    TO-220AB
    25V
    9A
    0.745Ohm
    26A
    600V
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • STP95N3LLH6
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP95
    3
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    19 ns
    N-Channel
    SWITCHING
    4.7m Ω @ 40A, 10V
    2.5V @ 250μA
    2200pF @ 25V
    80A Tc
    20nC @ 4.5V
    91ns
    -
    4.5V 10V
    ±20V
    23.4 ns
    24.5 ns
    80A
    1V
    TO-220AB
    20V
    -
    -
    -
    -
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    4.7MOhm
    DRAIN
    30V
    150 mJ
    -
    -
    -
  • STP9NK60ZFP
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP9N
    3
    1
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    19 ns
    N-Channel
    SWITCHING
    950m Ω @ 3.5A, 10V
    4.5V @ 100μA
    1110pF @ 25V
    7A Tc
    53nC @ 10V
    17ns
    -
    10V
    ±30V
    15 ns
    43 ns
    7A
    3.75V
    TO-220AB
    30V
    7A
    0.95Ohm
    28A
    -
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    ISOLATED
    600V
    -
    12 Weeks
    4.535924g
    245
  • STP9N60M2
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    150°C TJ
    Tube
    MDmesh™ II Plus
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    STP9N
    -
    -
    60W Tc
    Single
    -
    60W
    8.8 ns
    N-Channel
    -
    780m Ω @ 3A, 10V
    4V @ 250μA
    320pF @ 100V
    5.5A Tc
    10nC @ 10V
    7.5ns
    600V
    10V
    ±25V
    13.5 ns
    22 ns
    5.5A
    -
    -
    25V
    -
    -
    -
    -
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    780mOhm
    -
    650V
    -
    16 Weeks
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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