STMicroelectronics STP9NM60N
- Part Number:
- STP9NM60N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070487-STP9NM60N
- Description:
- MOSFET N-CH 600V 6.5A TO-220
- Datasheet:
- STP9NM60N
STMicroelectronics STP9NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP9NM60N.
- Lifecycle StatusNRND (Last Updated: 7 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP9N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Turn On Delay Time28 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs745m Ω @ 3.25A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds452pF @ 50V
- Current - Continuous Drain (Id) @ 25°C6.5A Tc
- Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
- Rise Time23ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)26.7 ns
- Turn-Off Delay Time52.5 ns
- Continuous Drain Current (ID)6.5A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain Current-Max (Abs) (ID)9A
- Drain-source On Resistance-Max0.745Ohm
- Pulsed Drain Current-Max (IDM)26A
- DS Breakdown Voltage-Min600V
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP9NM60N Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 452pF @ 50V.This device conducts a continuous drain current (ID) of 6.5A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 52.5 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 26A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP9NM60N Features
a continuous drain current (ID) of 6.5A
the turn-off delay time is 52.5 ns
based on its rated peak drain current 26A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
STP9NM60N Applications
There are a lot of STMicroelectronics
STP9NM60N applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 452pF @ 50V.This device conducts a continuous drain current (ID) of 6.5A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 52.5 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 26A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP9NM60N Features
a continuous drain current (ID) of 6.5A
the turn-off delay time is 52.5 ns
based on its rated peak drain current 26A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
STP9NM60N Applications
There are a lot of STMicroelectronics
STP9NM60N applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STP9NM60N More Descriptions
Single N-Channel 600 V 0.7 Ohm 17.4 nC 70 W MDmesh II Power MOSFET -TO-220-3
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CH, 600V, 6.5A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.63ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CH, 600V, 6.5A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.63ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP9NM60N.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeResistanceCase ConnectionDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Factory Lead TimeWeightPeak Reflow Temperature (Cel)View Compare
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STP9NM60NNRND (Last Updated: 7 months ago)Through HoleThrough HoleTO-220-33SILICON150°C TJTubeMDmesh™ IIe3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP9N3170W TcSingleENHANCEMENT MODE70W28 nsN-ChannelSWITCHING745m Ω @ 3.25A, 10V4V @ 250μA452pF @ 50V6.5A Tc17.4nC @ 10V23ns600V10V±25V26.7 ns52.5 ns6.5A3VTO-220AB25V9A0.745Ohm26A600V15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------
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-Through HoleThrough HoleTO-220-33SILICON175°C TJTubeDeepGATE™, STripFET™ VIe3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP953170W TcSingleENHANCEMENT MODE70W19 nsN-ChannelSWITCHING4.7m Ω @ 40A, 10V2.5V @ 250μA2200pF @ 25V80A Tc20nC @ 4.5V91ns-4.5V 10V±20V23.4 ns24.5 ns80A1VTO-220AB20V----15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free4.7MOhmDRAIN30V150 mJ---
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ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP9N3130W TcSingleENHANCEMENT MODE30W19 nsN-ChannelSWITCHING950m Ω @ 3.5A, 10V4.5V @ 100μA1110pF @ 25V7A Tc53nC @ 10V17ns-10V±30V15 ns43 ns7A3.75VTO-220AB30V7A0.95Ohm28A-16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant--ISOLATED600V-12 Weeks4.535924g245
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ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-220-33-150°C TJTubeMDmesh™ II Plus-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)STP9N--60W TcSingle-60W8.8 nsN-Channel-780m Ω @ 3A, 10V4V @ 250μA320pF @ 100V5.5A Tc10nC @ 10V7.5ns600V10V±25V13.5 ns22 ns5.5A--25V----15.75mm10.4mm4.6mm-NoROHS3 CompliantLead Free780mOhm-650V-16 Weeks--
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