STMicroelectronics STP90NF03L
- Part Number:
- STP90NF03L
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3586223-STP90NF03L
- Description:
- MOSFET N-CH 30V 90A TO-220
- ECAD Model:
-
- Datasheet:
- STP90NF03L
STMicroelectronics STP90NF03L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP90NF03L.
- Lifecycle StatusNRND (Last Updated: 8 months ago)
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingTube
- SeriesSTripFET™
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating90A
- Base Part NumberSTP90N
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.5m Ω @ 45A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C90A Tc
- Gate Charge (Qg) (Max) @ Vgs47nC @ 5V
- Rise Time200ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)105 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)90A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0065Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)360A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP90NF03L Description
STP90NF03L belongs to the family of N-channel STripFET? power MOSFETs developed by STMicroelectronics based on the third generation of its unique “single feature size” strip-based process. This process makes it able to deliver low on-state resistance while maintaining a low gate charge. This device ensures excellent performance in terms of both conduction and switching losses when it is used as high and low side in buck regulator.
STP90NF03L Features
Low gate charge
Low on-resistance
Low conduction and switching losses
Available in TO-220/I2PAK package
Unique “single feature size” strip-based process
STP90NF03L Applications
Switching applications
STP90NF03L belongs to the family of N-channel STripFET? power MOSFETs developed by STMicroelectronics based on the third generation of its unique “single feature size” strip-based process. This process makes it able to deliver low on-state resistance while maintaining a low gate charge. This device ensures excellent performance in terms of both conduction and switching losses when it is used as high and low side in buck regulator.
STP90NF03L Features
Low gate charge
Low on-resistance
Low conduction and switching losses
Available in TO-220/I2PAK package
Unique “single feature size” strip-based process
STP90NF03L Applications
Switching applications
STP90NF03L More Descriptions
N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 30V 90A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 30V 90A TO-220
Single N-Channel 30 V 150 W 47 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 30V 90A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 30V 90A TO-220
Single N-Channel 30 V 150 W 47 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP90NF03L.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeNumber of PinsFactory Lead TimeWeightTerminal FinishPeak Reflow Temperature (Cel)Case ConnectionThreshold VoltageDrain Current-Max (Abs) (ID)HeightLengthWidthREACH SVHCResistanceDrain to Source Voltage (Vdss)View Compare
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STP90NF03LNRND (Last Updated: 8 months ago)TinThrough HoleThrough HoleTO-220-3SILICON-65°C~175°C TJTubeSTripFET™e3Not For New Designs1 (Unlimited)3EAR99FET General Purpose Power30VMOSFET (Metal Oxide)90ASTP90N3R-PSFM-T31150W TcSingleENHANCEMENT MODE150W30 nsN-ChannelSWITCHING6.5m Ω @ 45A, 10V2.5V @ 250μA2700pF @ 25V90A Tc47nC @ 5V200ns5V 10V±20V105 ns50 ns90ATO-220AB20V0.0065Ohm30V360ANoROHS3 CompliantLead Free--------------- -
--Through HoleThrough HoleTO-220-3-150°C TJTubeMDmesh™ II-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-STP9N---60W TcSingle--7 nsN-Channel-790m Ω @ 2.5A, 10V4V @ 250μA365pF @ 50V5.6A Tc14nC @ 10V4.4ns10V±25V8.8 ns25 ns5.6A-25V-400V-NoROHS3 Compliant-3-------------
-
ACTIVE (Last Updated: 8 months ago)-Through HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99FET General Purpose Power-MOSFET (Metal Oxide)-STP9N3-130W TcSingleENHANCEMENT MODE30W19 nsN-ChannelSWITCHING950m Ω @ 3.5A, 10V4.5V @ 100μA1110pF @ 25V7A Tc53nC @ 10V17ns10V±30V15 ns43 ns7ATO-220AB30V0.95Ohm600V28ANoROHS3 Compliant-312 Weeks4.535924gMatte Tin (Sn)245ISOLATED3.75V7A16.4mm10.4mm4.6mmNo SVHC--
-
ACTIVE (Last Updated: 8 months ago)-Through HoleThrough HoleTO-220-3-150°C TJTubeMDmesh™ II Plus-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-STP9N---60W TcSingle-60W8.8 nsN-Channel-780m Ω @ 3A, 10V4V @ 250μA320pF @ 100V5.5A Tc10nC @ 10V7.5ns10V±25V13.5 ns22 ns5.5A-25V-650V-NoROHS3 CompliantLead Free316 Weeks------15.75mm10.4mm4.6mm-780mOhm600V
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