STMicroelectronics STP7N52K3
- Part Number:
- STP7N52K3
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3586211-STP7N52K3
- Description:
- MOSFET N-CH 525V 6.2A TO220
- Datasheet:
- ST(D,P)7N52K3
STMicroelectronics STP7N52K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP7N52K3.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesSuperMESH3™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance850mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP7N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs980m Ω @ 3.1A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds737pF @ 100V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Rise Time11ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)6.2A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage525V
- Pulsed Drain Current-Max (IDM)25A
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP7N52K3 Overview
A device's maximal input capacitance is 737pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 525V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STP7N52K3 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 25A.
a threshold voltage of 3.75V
STP7N52K3 Applications
There are a lot of STMicroelectronics
STP7N52K3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 737pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 525V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STP7N52K3 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 25A.
a threshold voltage of 3.75V
STP7N52K3 Applications
There are a lot of STMicroelectronics
STP7N52K3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STP7N52K3 More Descriptions
N-Channel 525 V 0.85 Ohm SuperMesh III Power MosFet - TO-220
N-channel 525 V, 0.72 Ohm, 6 A, TO-220 SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 525V 6.2A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 525V, 6.2A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:525V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
N-channel 525 V, 0.72 Ohm, 6 A, TO-220 SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 525V 6.2A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 525V, 6.2A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:525V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
The three parts on the right have similar specifications to STP7N52K3.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Avalanche Energy Rating (Eas)WeightVoltage - Rated DCCurrent RatingCase ConnectionDrain Current-Max (Abs) (ID)View Compare
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STP7N52K3ACTIVE (Last Updated: 7 months ago)12 WeeksThrough HoleThrough HoleTO-220-33SILICON150°C TJTubeSuperMESH3™e3Active1 (Unlimited)3EAR99850mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP7N3190W TcSingleENHANCEMENT MODE90W11 nsN-ChannelSWITCHING980m Ω @ 3.1A, 10V4.5V @ 50μA737pF @ 100V6A Tc34nC @ 10V11ns10V±30V19 ns36 ns6.2A3.75VTO-220AB30V525V25A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free----------
-
ACTIVE (Last Updated: 7 months ago)16 WeeksThrough HoleThrough HoleTO-220-33--55°C~150°C TJTubeMDmesh™-Active1 (Unlimited)-EAR99980mOhm--MOSFET (Metal Oxide)STP7N--60W Tc----N-Channel-1.15 Ω @ 2.5A, 10V4V @ 250μA270pF @ 100V5A Tc9nC @ 10V-10V±25V--5A3V-------No SVHC-ROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIED650V------
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ACTIVE (Last Updated: 7 months ago)12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSuperMESH3™e3Active1 (Unlimited)3EAR991.35OhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP7N31150W TcSingleENHANCEMENT MODE150W14 nsN-ChannelSWITCHING1.35 Ω @ 3.6A, 10V5V @ 100μA1031pF @ 100V7.2A Tc34nC @ 10V9ns10V±30V23 ns36 ns7.2A4VTO-220AB30V950V28.8A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---220 mJ-----
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ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR9911mOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP75N31300W TcSingleENHANCEMENT MODE300W25 nsN-ChannelSWITCHING11m Ω @ 40A, 10V4V @ 250μA3700pF @ 25V80A Tc160nC @ 10V100ns10V±20V30 ns66 ns80A3VTO-220AB20V75V-9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---700 mJ9.071847g75V80ADRAIN75A
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