STP7N52K3

STMicroelectronics STP7N52K3

Part Number:
STP7N52K3
Manufacturer:
STMicroelectronics
Ventron No:
3586211-STP7N52K3
Description:
MOSFET N-CH 525V 6.2A TO220
ECAD Model:
Datasheet:
ST(D,P)7N52K3

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Specifications
STMicroelectronics STP7N52K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP7N52K3.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH3™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    850mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP7N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    90W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    90W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    980m Ω @ 3.1A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    737pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    34nC @ 10V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    6.2A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    525V
  • Pulsed Drain Current-Max (IDM)
    25A
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP7N52K3 Overview
A device's maximal input capacitance is 737pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 525V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STP7N52K3 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 25A.
a threshold voltage of 3.75V


STP7N52K3 Applications
There are a lot of STMicroelectronics
STP7N52K3 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STP7N52K3 More Descriptions
N-Channel 525 V 0.85 Ohm SuperMesh III Power MosFet - TO-220
N-channel 525 V, 0.72 Ohm, 6 A, TO-220 SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 525V 6.2A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 525V, 6.2A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:525V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to STP7N52K3.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Avalanche Energy Rating (Eas)
    Weight
    Voltage - Rated DC
    Current Rating
    Case Connection
    Drain Current-Max (Abs) (ID)
    View Compare
  • STP7N52K3
    STP7N52K3
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    SuperMESH3™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    850mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP7N
    3
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    11 ns
    N-Channel
    SWITCHING
    980m Ω @ 3.1A, 10V
    4.5V @ 50μA
    737pF @ 100V
    6A Tc
    34nC @ 10V
    11ns
    10V
    ±30V
    19 ns
    36 ns
    6.2A
    3.75V
    TO-220AB
    30V
    525V
    25A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP7N65M2
    ACTIVE (Last Updated: 7 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    MDmesh™
    -
    Active
    1 (Unlimited)
    -
    EAR99
    980mOhm
    -
    -
    MOSFET (Metal Oxide)
    STP7N
    -
    -
    60W Tc
    -
    -
    -
    -
    N-Channel
    -
    1.15 Ω @ 2.5A, 10V
    4V @ 250μA
    270pF @ 100V
    5A Tc
    9nC @ 10V
    -
    10V
    ±25V
    -
    -
    5A
    3V
    -
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    650V
    -
    -
    -
    -
    -
    -
  • STP7N95K3
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH3™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    1.35Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP7N
    3
    1
    150W Tc
    Single
    ENHANCEMENT MODE
    150W
    14 ns
    N-Channel
    SWITCHING
    1.35 Ω @ 3.6A, 10V
    5V @ 100μA
    1031pF @ 100V
    7.2A Tc
    34nC @ 10V
    9ns
    10V
    ±30V
    23 ns
    36 ns
    7.2A
    4V
    TO-220AB
    30V
    950V
    28.8A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    220 mJ
    -
    -
    -
    -
    -
  • STP75NF75
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    11mOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP75N
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    25 ns
    N-Channel
    SWITCHING
    11m Ω @ 40A, 10V
    4V @ 250μA
    3700pF @ 25V
    80A Tc
    160nC @ 10V
    100ns
    10V
    ±20V
    30 ns
    66 ns
    80A
    3V
    TO-220AB
    20V
    75V
    -
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    700 mJ
    9.071847g
    75V
    80A
    DRAIN
    75A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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