STMicroelectronics STP7N65M2
- Part Number:
- STP7N65M2
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070474-STP7N65M2
- Description:
- MOSFET N-CH 650V 5A TO-220AB
- Datasheet:
- STP7N65M2
STMicroelectronics STP7N65M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP7N65M2.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Resistance980mOhm
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTP7N
- Power Dissipation-Max60W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.15 Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds270pF @ 100V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Continuous Drain Current (ID)5A
- Threshold Voltage3V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
STP7N65M2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STP7N65M2 Features
a continuous drain current (ID) of 5A
a threshold voltage of 3V
a 650V drain to source voltage (Vdss)
STP7N65M2 Applications
There are a lot of STMicroelectronics
STP7N65M2 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STP7N65M2 Features
a continuous drain current (ID) of 5A
a threshold voltage of 3V
a 650V drain to source voltage (Vdss)
STP7N65M2 Applications
There are a lot of STMicroelectronics
STP7N65M2 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP7N65M2 More Descriptions
N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package
STMICROELECTRONICS STP7N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
Trans MOSFET N-CH 650V 5A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CHANNEL, 650V, 5A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.98ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
STMICROELECTRONICS STP7N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
Trans MOSFET N-CH 650V 5A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CHANNEL, 650V, 5A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.98ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
The three parts on the right have similar specifications to STP7N65M2.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeResistanceTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Threshold VoltageREACH SVHCRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningLead FreeWeightVoltage - Rated DCCurrent RatingCase ConnectionView Compare
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STP7N65M2ACTIVE (Last Updated: 7 months ago)16 WeeksThrough HoleThrough HoleTO-220-33-55°C~150°C TJTubeMDmesh™Active1 (Unlimited)EAR99980mOhmMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTP7N60W TcN-Channel1.15 Ω @ 2.5A, 10V4V @ 250μA270pF @ 100V5A Tc9nC @ 10V650V10V±25V5A3VNo SVHCROHS3 Compliant-------------------------------
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--Through HoleThrough HoleTO-220-33150°C TJTubeMDmesh™ IIObsolete1 (Unlimited)EAR99900mOhmMOSFET (Metal Oxide)--STP7N45W TcN-Channel900m Ω @ 2.5A, 10V4V @ 250μA363pF @ 50V5A Tc14nC @ 10V-10V±25V5A3VNo SVHCROHS3 CompliantSILICONe33Matte Tin (Sn)FET General Purpose Power31SingleENHANCEMENT MODE45W7 nsSWITCHING10ns12 ns26 nsTO-220AB25V5A600V20A119 mJ15.75mm10.4mm4.6mmNoLead Free----
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ACTIVE (Last Updated: 7 months ago)12 WeeksThrough HoleThrough HoleTO-220-33-55°C~150°C TJTubeSuperMESH3™Active1 (Unlimited)EAR991.35OhmMOSFET (Metal Oxide)--STP7N150W TcN-Channel1.35 Ω @ 3.6A, 10V5V @ 100μA1031pF @ 100V7.2A Tc34nC @ 10V-10V±30V7.2A4VNo SVHCROHS3 CompliantSILICONe33Matte Tin (Sn)FET General Purpose Power31SingleENHANCEMENT MODE150W14 nsSWITCHING9ns23 ns36 nsTO-220AB30V-950V28.8A220 mJ15.75mm10.4mm4.6mmNoLead Free----
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ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-33-55°C~175°C TJTubeSTripFET™ IIActive1 (Unlimited)EAR9911mOhmMOSFET (Metal Oxide)--STP75N300W TcN-Channel11m Ω @ 40A, 10V4V @ 250μA3700pF @ 25V80A Tc160nC @ 10V-10V±20V80A3VNo SVHCROHS3 CompliantSILICONe33Tin (Sn)FET General Purpose Power31SingleENHANCEMENT MODE300W25 nsSWITCHING100ns30 ns66 nsTO-220AB20V75A75V-700 mJ9.15mm10.4mm4.6mmNoLead Free9.071847g75V80ADRAIN
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