STP7N65M2

STMicroelectronics STP7N65M2

Part Number:
STP7N65M2
Manufacturer:
STMicroelectronics
Ventron No:
3070474-STP7N65M2
Description:
MOSFET N-CH 650V 5A TO-220AB
ECAD Model:
Datasheet:
STP7N65M2

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Specifications
STMicroelectronics STP7N65M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP7N65M2.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Resistance
    980mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STP7N
  • Power Dissipation-Max
    60W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.15 Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    270pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 10V
  • Drain to Source Voltage (Vdss)
    650V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    3V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
STP7N65M2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STP7N65M2 Features
a continuous drain current (ID) of 5A
a threshold voltage of 3V
a 650V drain to source voltage (Vdss)


STP7N65M2 Applications
There are a lot of STMicroelectronics
STP7N65M2 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP7N65M2 More Descriptions
N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package
STMICROELECTRONICS STP7N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
Trans MOSFET N-CH 650V 5A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CHANNEL, 650V, 5A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.98ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
Product Comparison
The three parts on the right have similar specifications to STP7N65M2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Resistance
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Threshold Voltage
    REACH SVHC
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Subcategory
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Weight
    Voltage - Rated DC
    Current Rating
    Case Connection
    View Compare
  • STP7N65M2
    STP7N65M2
    ACTIVE (Last Updated: 7 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -55°C~150°C TJ
    Tube
    MDmesh™
    Active
    1 (Unlimited)
    EAR99
    980mOhm
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STP7N
    60W Tc
    N-Channel
    1.15 Ω @ 2.5A, 10V
    4V @ 250μA
    270pF @ 100V
    5A Tc
    9nC @ 10V
    650V
    10V
    ±25V
    5A
    3V
    No SVHC
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP7NM60N
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    150°C TJ
    Tube
    MDmesh™ II
    Obsolete
    1 (Unlimited)
    EAR99
    900mOhm
    MOSFET (Metal Oxide)
    -
    -
    STP7N
    45W Tc
    N-Channel
    900m Ω @ 2.5A, 10V
    4V @ 250μA
    363pF @ 50V
    5A Tc
    14nC @ 10V
    -
    10V
    ±25V
    5A
    3V
    No SVHC
    ROHS3 Compliant
    SILICON
    e3
    3
    Matte Tin (Sn)
    FET General Purpose Power
    3
    1
    Single
    ENHANCEMENT MODE
    45W
    7 ns
    SWITCHING
    10ns
    12 ns
    26 ns
    TO-220AB
    25V
    5A
    600V
    20A
    119 mJ
    15.75mm
    10.4mm
    4.6mm
    No
    Lead Free
    -
    -
    -
    -
  • STP7N95K3
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -55°C~150°C TJ
    Tube
    SuperMESH3™
    Active
    1 (Unlimited)
    EAR99
    1.35Ohm
    MOSFET (Metal Oxide)
    -
    -
    STP7N
    150W Tc
    N-Channel
    1.35 Ω @ 3.6A, 10V
    5V @ 100μA
    1031pF @ 100V
    7.2A Tc
    34nC @ 10V
    -
    10V
    ±30V
    7.2A
    4V
    No SVHC
    ROHS3 Compliant
    SILICON
    e3
    3
    Matte Tin (Sn)
    FET General Purpose Power
    3
    1
    Single
    ENHANCEMENT MODE
    150W
    14 ns
    SWITCHING
    9ns
    23 ns
    36 ns
    TO-220AB
    30V
    -
    950V
    28.8A
    220 mJ
    15.75mm
    10.4mm
    4.6mm
    No
    Lead Free
    -
    -
    -
    -
  • STP75NF75
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -55°C~175°C TJ
    Tube
    STripFET™ II
    Active
    1 (Unlimited)
    EAR99
    11mOhm
    MOSFET (Metal Oxide)
    -
    -
    STP75N
    300W Tc
    N-Channel
    11m Ω @ 40A, 10V
    4V @ 250μA
    3700pF @ 25V
    80A Tc
    160nC @ 10V
    -
    10V
    ±20V
    80A
    3V
    No SVHC
    ROHS3 Compliant
    SILICON
    e3
    3
    Tin (Sn)
    FET General Purpose Power
    3
    1
    Single
    ENHANCEMENT MODE
    300W
    25 ns
    SWITCHING
    100ns
    30 ns
    66 ns
    TO-220AB
    20V
    75A
    75V
    -
    700 mJ
    9.15mm
    10.4mm
    4.6mm
    No
    Lead Free
    9.071847g
    75V
    80A
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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