STMicroelectronics STP7NK80ZFP
- Part Number:
- STP7NK80ZFP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070369-STP7NK80ZFP
- Description:
- MOSFET N-CH 800V 5.2A TO-220FP
- Datasheet:
- STP7NK80ZFP
STMicroelectronics STP7NK80ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP7NK80ZFP.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.8Ohm
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP7N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max30W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation30W
- Case ConnectionISOLATED
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.8 Ω @ 2.6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1138pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.2A Tc
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)5.2A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage800V
- Pulsed Drain Current-Max (IDM)20.8A
- Height9.3mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP7NK80ZFP Description
The SuperMESHTM series is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM structure. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage Power MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.
STP7NK80ZFP Features
Exceptional dv/dt performance
Avalanche-proofed to the nth degree
Gate price is kept to a minimum.
Intrinsically low capacitances
Exceptional manufacturing consistency
STP7NK80ZFP Applications
Switching applications
The SuperMESHTM series is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM structure. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage Power MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.
STP7NK80ZFP Features
Exceptional dv/dt performance
Avalanche-proofed to the nth degree
Gate price is kept to a minimum.
Intrinsically low capacitances
Exceptional manufacturing consistency
STP7NK80ZFP Applications
Switching applications
STP7NK80ZFP More Descriptions
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in a TO-220FP packageCiiva Crawler
Trans MOSFET N-CH 800V 5.2A 3-Pin(3 Tab) TO-220FP Tube
MSP430F563x Mixed Signal Microcontroller 113-BGA MICROSTAR JUNIOR -40 to 85
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 800V 5.2A 3-Pin(3 Tab) TO-220FP Tube
MSP430F563x Mixed Signal Microcontroller 113-BGA MICROSTAR JUNIOR -40 to 85
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP7NK80ZFP.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Drain-source On Resistance-MaxView Compare
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STP7NK80ZFPACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack34.535924gSILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR991.8OhmMatte Tin (Sn) - annealedAVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)STP7N3130W TcSingleENHANCEMENT MODE30WISOLATED20 nsN-ChannelSWITCHING1.8 Ω @ 2.6A, 10V4.5V @ 100μA1138pF @ 25V5.2A Tc56nC @ 10V12ns10V±30V20 ns45 ns5.2A3.75VTO-220AB30V800V20.8A9.3mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-----
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ACTIVE (Last Updated: 7 months ago)16 WeeksThrough HoleThrough HoleTO-220-33---55°C~150°C TJTubeMDmesh™-Active1 (Unlimited)-EAR99980mOhm---MOSFET (Metal Oxide)STP7N--60W Tc-----N-Channel-1.15 Ω @ 2.5A, 10V4V @ 250μA270pF @ 100V5A Tc9nC @ 10V-10V±25V--5A3V-------No SVHC-ROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIED650V-
-
ACTIVE (Last Updated: 8 months ago)17 WeeksThrough HoleThrough HoleTO-220-3----55°C~150°C TJTubeMDmesh™-Active1 (Unlimited)-EAR99----MOSFET (Metal Oxide)STP7LN--85W Tc-----N-Channel-1.15 Ω @ 2.5A, 10V5V @ 100μA270pF @ 100V5A Tc12nC @ 10V-10V±30V--5A----------ROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIED800V-
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ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3-SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3--Matte Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)STP7N3125W TcSingleENHANCEMENT MODE25WISOLATED15 nsN-ChannelSWITCHING1 Ω @ 2.7A, 10V4.5V @ 50μA535pF @ 25V5.4A Tc26nC @ 10V15ns10V±30V12 ns30 ns5.4A3.75VTO-220AB30V400V-16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant----1Ohm
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