STP7NK80ZFP

STMicroelectronics STP7NK80ZFP

Part Number:
STP7NK80ZFP
Manufacturer:
STMicroelectronics
Ventron No:
3070369-STP7NK80ZFP
Description:
MOSFET N-CH 800V 5.2A TO-220FP
ECAD Model:
Datasheet:
STP7NK80ZFP

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Specifications
STMicroelectronics STP7NK80ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP7NK80ZFP.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    1.8Ohm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP7N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    30W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    30W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.8 Ω @ 2.6A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1138pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    56nC @ 10V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    5.2A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    800V
  • Pulsed Drain Current-Max (IDM)
    20.8A
  • Height
    9.3mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP7NK80ZFP Description
The SuperMESHTM series is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM structure. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage Power MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.

STP7NK80ZFP Features
Exceptional dv/dt performance
Avalanche-proofed to the nth degree
Gate price is kept to a minimum.
Intrinsically low capacitances
Exceptional manufacturing consistency

STP7NK80ZFP Applications
Switching applications

STP7NK80ZFP More Descriptions
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in a TO-220FP packageCiiva Crawler
Trans MOSFET N-CH 800V 5.2A 3-Pin(3 Tab) TO-220FP Tube
MSP430F563x Mixed Signal Microcontroller 113-BGA MICROSTAR JUNIOR -40 to 85
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP7NK80ZFP.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    View Compare
  • STP7NK80ZFP
    STP7NK80ZFP
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    1.8Ohm
    Matte Tin (Sn) - annealed
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP7N
    3
    1
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    ISOLATED
    20 ns
    N-Channel
    SWITCHING
    1.8 Ω @ 2.6A, 10V
    4.5V @ 100μA
    1138pF @ 25V
    5.2A Tc
    56nC @ 10V
    12ns
    10V
    ±30V
    20 ns
    45 ns
    5.2A
    3.75V
    TO-220AB
    30V
    800V
    20.8A
    9.3mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • STP7N65M2
    ACTIVE (Last Updated: 7 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~150°C TJ
    Tube
    MDmesh™
    -
    Active
    1 (Unlimited)
    -
    EAR99
    980mOhm
    -
    -
    -
    MOSFET (Metal Oxide)
    STP7N
    -
    -
    60W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    1.15 Ω @ 2.5A, 10V
    4V @ 250μA
    270pF @ 100V
    5A Tc
    9nC @ 10V
    -
    10V
    ±25V
    -
    -
    5A
    3V
    -
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    650V
    -
  • STP7LN80K5
    ACTIVE (Last Updated: 8 months ago)
    17 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~150°C TJ
    Tube
    MDmesh™
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    STP7LN
    -
    -
    85W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    1.15 Ω @ 2.5A, 10V
    5V @ 100μA
    270pF @ 100V
    5A Tc
    12nC @ 10V
    -
    10V
    ±30V
    -
    -
    5A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    800V
    -
  • STP7NK40ZFP
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    -
    -
    Matte Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP7N
    3
    1
    25W Tc
    Single
    ENHANCEMENT MODE
    25W
    ISOLATED
    15 ns
    N-Channel
    SWITCHING
    1 Ω @ 2.7A, 10V
    4.5V @ 50μA
    535pF @ 25V
    5.4A Tc
    26nC @ 10V
    15ns
    10V
    ±30V
    12 ns
    30 ns
    5.4A
    3.75V
    TO-220AB
    30V
    400V
    -
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    1Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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