STMicroelectronics STN1HNK60

Name: STN1HNK60
Brand: STMicroelectronics
SKU: 2477952-STN1HNK60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STN1HNK60

Manufacturer:: STMicroelectronics

Ventron No:: 2477952-STN1HNK60

Description:: MOSFET N-CH 600V 400MA SOT223

ECAD Model:

Datasheet:: STN1HNK60

Specifications

STMicroelectronics STN1HNK60 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STN1HNK60.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
8.5Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
400mA
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STN1H
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.3W
Case Connection
DRAIN
Turn On Delay Time
6.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
156pF @ 25V
Current - Continuous Drain (Id) @ 25°C
400mA Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
500mA
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
0.4A
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
25 mJ
Max Junction Temperature (Tj)
150°C
Nominal Vgs
3 V
Height
1.82mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STN1HNK60 Description
The STN1HNK60 is a 600V N-channel SuperMESH? MOSFET with extreme optimization of well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.

STN1HNK60 Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Drain-source voltage:600v
Gate- source voltage: ±30v

STN1HNK60 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STN1HNK60 More Descriptions

N-CHANNEL 600V 8 Ohm 0.4A SOT-223 SUPERMESH MOSFET
N-Channel 600 V 10 nC Surface Mount SuperMESH Power MosFet - SOT-223
Trans MOSFET N-CH 600V 0.4A 4-Pin(3 Tab) SOT-223 T/R
Power MOSFET Transistors 600V 8Ohm 1A N-Chnnl SUPERMESH MOSFET
MOSFET, N CH, 600V, 400MA, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Source Voltage Vds:600V; On Resistance
MOSFET, N CH, 600V, 400MA, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 400mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 400 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 8.5 / Gate-Source Voltage V = 30 / Fall Time ns = 25 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3

Product Comparison

The three parts on the right have similar specifications to STN1HNK60.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Configuration

Voltage

Current

Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

View Compare
STN1HNK60

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

4

EAR99

8.5Ohm

Matte Tin (Sn) - annealed

FET General Purpose Power

600V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

400mA

30

STN1H

4

R-PDSO-G4

1

1

3.3W Tc

Single

ENHANCEMENT MODE

3.3W

DRAIN

6.5 ns

N-Channel

SWITCHING

8.5 Ω @ 500mA, 10V

3.7V @ 250μA

156pF @ 25V

400mA Tc

10nC @ 10V

5ns

10V

±30V

25 ns

19 ns

500mA

3V

30V

0.4A

600V

25 mJ

150°C

3 V

1.82mm

6.5mm

3.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STN1N20

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

4

EAR99

1.5Ohm

Matte Tin (Sn)

FET General Purpose Power

200V

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1A

-

STN1N

4

R-PDSO-G4

1

-

2.9W Tc

-

ENHANCEMENT MODE

2.9W

DRAIN

6 ns

N-Channel

SWITCHING

1.5 Ω @ 500mA, 10V

5V @ 250μA

206pF @ 25V

1A Tc

15.7nC @ 10V

6ns

10V

±20V

5 ns

-

1A

3V

20V

-

200V

-

-

3 V

1.8mm

6.5mm

3.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

yes

SINGLE WITH BUILT-IN DIODE

200V

1A

200V

-

-

STN1HNK60 vs STN1N20
STN1NF10

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Obsolete

1 (Unlimited)

4

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

1A

30

STN1N

4

R-PDSO-G4

1

-

2.5W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

4 ns

N-Channel

SWITCHING

800m Ω @ 500mA, 10V

4V @ 250μA

105pF @ 25V

1A Tc

6nC @ 10V

5.5ns

10V

±20V

6.5 ns

13 ns

500mA

3V

20V

1A

100V

-

-

-

1.6mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

0.8Ohm

-

STN1HNK60 vs STN1NF10
STN1NF20

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

SILICON

-55°C~150°C TJ

Cut Tape (CT)

STripFET™ II

-

Active

1 (Unlimited)

4

EAR99

-

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

STN1N

-

-

1

-

2W Ta

Single

ENHANCEMENT MODE

2W

DRAIN

-

N-Channel

SWITCHING

1.5 Ω @ 500mA, 10V

4V @ 250μA

90pF @ 25V

1A Tc

5.7nC @ 10V

5.6ns

10V

±20V

12.4 ns

-

1A

-

20V

1A

200V

70 mJ

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

4A

STN1HNK60 vs STN1NF20