STMicroelectronics STN1NK80Z

Name: STN1NK80Z
Brand: STMicroelectronics
SKU: 2481827-STN1NK80Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STN1NK80Z

Manufacturer:: STMicroelectronics

Ventron No:: 2481827-STN1NK80Z

Description:: MOSFET N-CH 800V 0.25A SOT223

ECAD Model:

Datasheet:: STN1NK80Z

Specifications

STMicroelectronics STN1NK80Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STN1NK80Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
16Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
250mA
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STN1N
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
160pF @ 25V
Current - Continuous Drain (Id) @ 25°C
250mA Tc
Gate Charge (Qg) (Max) @ Vgs
7.7nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
55 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
250mA
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
0.25A
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
5A
Avalanche Energy Rating (Eas)
50 mJ
Max Junction Temperature (Tj)
150°C
Height
1.82mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STN1NK80Z Description
The STN1NK80Z is an 800V N-channel Zener-protected SuperMESH? MOSFET with extreme optimization of well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.

STN1NK80Z Features
Extremely high dv/dt capability
ESD improved capability
100% Avalanche tested
New high voltage benchmark
Gate charge minimized
STN1NK80Z Applications
AC Adaptors
Battery chargers
Switch-mode power supplies
Broadband fixed-line access
Datacom module
Wired networking
Wireless infrastructure

STN1NK80Z More Descriptions

MOSFET N-CH 800V 0.25A SOT223 / Trans MOSFET N-CH 800V 0.25A 4-Pin(3 Tab) SOT-223 T/R
N-Channel 800 V 16 Ohm Surface Mount SuperMESH MosFet - SOT-223
N-channel 800 V, 13 Ohm typ., 0.25 A SuperMESH Zener protected Power MOSFET in a SOT-223 package
Power Mosfet, N Channel, 250 Ma, 800 V, 13 Ohm, 30 V, 3.75 V |Stmicroelectronics STN1NK80Z
MOSFET, N CH, 800V, 0.25A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Source Voltage Vds:800V; On Resistance
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 16 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
MOSFET, N CH, 800V, 0.25A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 250mA; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 13ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 250mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STN1NK80Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-30 Code

Drain-source On Resistance-Max

Nominal Vgs

View Compare
STN1NK80Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

4

EAR99

16Ohm

Matte Tin (Sn) - annealed

FET General Purpose Power

800V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

250mA

30

STN1N

4

1

1

2.5W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

8 ns

N-Channel

SWITCHING

16 Ω @ 500mA, 10V

4.5V @ 50μA

160pF @ 25V

250mA Tc

7.7nC @ 10V

30ns

10V

±30V

55 ns

22 ns

250mA

3.75V

30V

0.25A

800V

5A

50 mJ

150°C

1.82mm

6.5mm

3.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-
STN1NF10

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Obsolete

1 (Unlimited)

4

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

1A

30

STN1N

4

1

-

2.5W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

4 ns

N-Channel

SWITCHING

800m Ω @ 500mA, 10V

4V @ 250μA

105pF @ 25V

1A Tc

6nC @ 10V

5.5ns

10V

±20V

6.5 ns

13 ns

500mA

3V

20V

1A

100V

-

-

-

1.6mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

R-PDSO-G4

0.8Ohm

-

STN1NK80Z vs STN1NF10
STN1NF20

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

SILICON

-55°C~150°C TJ

Cut Tape (CT)

STripFET™ II

-

Active

1 (Unlimited)

4

EAR99

-

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

STN1N

-

1

-

2W Ta

Single

ENHANCEMENT MODE

2W

DRAIN

-

N-Channel

SWITCHING

1.5 Ω @ 500mA, 10V

4V @ 250μA

90pF @ 25V

1A Tc

5.7nC @ 10V

5.6ns

10V

±20V

12.4 ns

-

1A

-

20V

1A

200V

4A

70 mJ

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

STN1NK80Z vs STN1NF20
STN1HNK60

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

4

EAR99

8.5Ohm

Matte Tin (Sn) - annealed

FET General Purpose Power

600V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

400mA

30

STN1H

4

1

1

3.3W Tc

Single

ENHANCEMENT MODE

3.3W

DRAIN

6.5 ns

N-Channel

SWITCHING

8.5 Ω @ 500mA, 10V

3.7V @ 250μA

156pF @ 25V

400mA Tc

10nC @ 10V

5ns

10V

±30V

25 ns

19 ns

500mA

3V

30V

0.4A

600V

-

25 mJ

150°C

1.82mm

6.5mm

3.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

R-PDSO-G4

-

3 V

STN1NK80Z vs STN1HNK60