STMicroelectronics STF7NM80

Name: STF7NM80
Brand: STMicroelectronics
SKU: 2485072-STF7NM80
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF7NM80

Manufacturer:: STMicroelectronics

Ventron No:: 2485072-STF7NM80

Description:: MOSFET N-CH 800V 6.5A TO-220FP

ECAD Model:

Datasheet:: STF7NM80

Specifications

STMicroelectronics STF7NM80 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF7NM80.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF7N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.05 Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
620pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.5A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
6.5A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
26A
Avalanche Energy Rating (Eas)
240 mJ
Nominal Vgs
4 V
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

STF7NM80 Description

STF7NM80 MOSFETs are Power MOSFETs with N-channels created using the 2nd Generation of MDmesh(tm) technology. STF7NM80 innovative Power MOSFETs join with a vertical layout to the layout of the company's strip to provide one of the lowest gate charges and on-resistance. STF7NM80 IC is ideal especially for demanding converters with high efficiency.

STF7NM80 Features

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

STF7NM80 Applications

Switching applications
PFC
server/telecom power
FPD TV power
ATX power
Industrial power

STF7NM80 More Descriptions

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220FP package
N-Channel 800 V 1.05 Ohm Flange Mount MDmesh Power Mosfet - TO-220FP
Trans MOSFET N-CH 800V 6.5A 3-Pin(3 Tab) TO-220FP Tube
Transistor N-Channel Power MOSFET 800V 6.5A
Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 800V, 6.5A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:3.25A; Drain Source Voltage Vds:800V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:TO-220FP; Power Dissipation Pd:25W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STF7NM80.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Termination

Resistance

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

Lead Free

Threshold Voltage

View Compare
STF7NM80

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

20 ns

N-Channel

SWITCHING

1.05 Ω @ 3.25A, 10V

5V @ 250μA

620pF @ 25V

6.5A Tc

18nC @ 10V

8ns

10V

±30V

10 ns

35 ns

6.5A

TO-220AB

30V

800V

26A

240 mJ

4 V

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-
STF7NM50N

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

3

1

20W Tc

Single

ENHANCEMENT MODE

20W

ISOLATED

-

N-Channel

SWITCHING

780m Ω @ 2.5A, 10V

4V @ 250μA

400pF @ 50V

5A Tc

12nC @ 10V

5ns

10V

±25V

9 ns

40 ns

2.5A

TO-220AB

25V

500V

20A

100 mJ

3 V

-

-

-

No SVHC

-

ROHS3 Compliant

Through Hole

780mOhm

NOT SPECIFIED

unknown

NOT SPECIFIED

Not Qualified

5A

500V

Lead Free

-

STF7NM80 vs STF7NM50N
STF7NM60N

STMicroelectronics

-

16 Weeks

Through Hole

Through Hole

TO-220-5 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

-

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

3

1

20W Tc

Single

ENHANCEMENT MODE

20W

ISOLATED

7 ns

N-Channel

SWITCHING

900m Ω @ 2.5A, 10V

4V @ 250μA

363pF @ 50V

5A Tc

14nC @ 10V

10ns

10V

±25V

12 ns

26 ns

5A

TO-220AB

25V

600V

20A

-

-

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

900MOhm

-

-

-

-

5A

-

Lead Free

3V

STF7NM80 vs STF7NM60N
STF7N95K3

STMicroelectronics

-

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH3™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

14 ns

N-Channel

SWITCHING

1.35 Ω @ 3.6A, 10V

5V @ 100μA

1031pF @ 100V

7.2A Tc

33nC @ 10V

9ns

10V

±30V

23 ns

36 ns

7.2A

TO-220AB

30V

950V

28.8A

220 mJ

-

16.4mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

STF7NM80 vs STF7N95K3