STMicroelectronics STF7N105K5
- Part Number:
- STF7N105K5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2478411-STF7N105K5
- Description:
- MOSFET N-CH 1050V 4A TO220FP
- ECAD Model:
-
- Datasheet:
- STF7N105K5
STMicroelectronics STF7N105K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF7N105K5.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH5™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTF7N
- ConfigurationSingle
- Power Dissipation-Max25W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2 Ω @ 2A, 10V
- Vgs(th) (Max) @ Id5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds380pF @ 100V
- Current - Continuous Drain (Id) @ 25°C4A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Drain to Source Voltage (Vdss)1050V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)4A
- Drain Current-Max (Abs) (ID)4A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF7N105K5 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 380pF @ 100V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 4A.In order to operate this transistor, a voltage of 1050V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STF7N105K5 Features
a continuous drain current (ID) of 4A
a 1050V drain to source voltage (Vdss)
STF7N105K5 Applications
There are a lot of STMicroelectronics
STF7N105K5 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 380pF @ 100V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 4A.In order to operate this transistor, a voltage of 1050V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STF7N105K5 Features
a continuous drain current (ID) of 4A
a 1050V drain to source voltage (Vdss)
STF7N105K5 Applications
There are a lot of STMicroelectronics
STF7N105K5 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STF7N105K5 More Descriptions
N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-220FP package
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 1.05KV 4A 3-Pin(3 Tab) TO-220FP Tube
1.05kV 4A 25W 2´Î@10V2A 5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
MOSFET, N-CH, 1.05KV, 4A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 1.05kV; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 1.05KV 4A 3-Pin(3 Tab) TO-220FP Tube
1.05kV 4A 25W 2´Î@10V2A 5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
MOSFET, N-CH, 1.05KV, 4A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 1.05kV; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
The three parts on the right have similar specifications to STF7N105K5.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)RoHS StatusLead FreeNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningResistanceThreshold VoltageContact PlatingView Compare
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STF7N105K5ACTIVE (Last Updated: 8 months ago)17 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~150°C TJTubeSuperMESH5™Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTF7NSingle25W TcN-Channel2 Ω @ 2A, 10V5V @ 100μA380pF @ 100V4A Tc17nC @ 10V1050V10V±30V4A4AROHS3 CompliantLead Free------------------------------- -
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~150°C TJTubeMDmesh™Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)--STF7N-25W TcN-Channel1.05 Ω @ 3.25A, 10V5V @ 250μA620pF @ 25V6.5A Tc18nC @ 10V-10V±30V6.5A-ROHS3 Compliant-3SILICONe33Matte Tin (Sn) - annealed31SingleENHANCEMENT MODE25WISOLATED20 nsSWITCHING8ns10 ns35 nsTO-220AB30V800V26A240 mJ4 V16.4mm10.4mm4.6mmNo SVHCNo---
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-16 WeeksThrough HoleThrough HoleTO-220-5 Full Pack150°C TJTubeMDmesh™ IIActive1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)--STF7N-20W TcN-Channel900m Ω @ 2.5A, 10V4V @ 250μA363pF @ 50V5A Tc14nC @ 10V-10V±25V5A5AROHS3 CompliantLead Free3SILICON-3-31SingleENHANCEMENT MODE20WISOLATED7 nsSWITCHING10ns12 ns26 nsTO-220AB25V600V20A--16.4mm10.4mm4.6mmNo SVHCNo900MOhm3V-
-
ACTIVE (Last Updated: 7 months ago)17 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~150°C TJTubeSuperMESH5™Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)--STF7N-25W TcN-Channel1.2 Ω @ 3A, 10V5V @ 100μA360pF @ 100V6A Tc13.4nC @ 10V-10V±30V6A6AROHS3 CompliantLead Free3-e3----Single-25W-11.3 ns-8.3ns22.2 ns23.7 ns-30V800V---16.4mm10.6mm4.6mm-No--Tin
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