STMicroelectronics STF7NM60N

Name: STF7NM60N
Brand: STMicroelectronics
SKU: 2484979-STF7NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF7NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 2484979-STF7NM60N

Description:: MOSFET N-CH 600V 4.7A TO-220FP

ECAD Model:

Datasheet:: STF7NM60N

Specifications

STMicroelectronics STF7NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF7NM60N.

Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-5 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
900MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF7N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
20W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
20W
Case Connection
ISOLATED
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
363pF @ 50V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
20A
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The STF7NM60N is an N-channel 600 V, 0.8 |? typ., 5 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and IPAK packages. These gadgets are N-channel Power MOSFETs created with MDmesh? technology's second generation. These ground-breaking Power MOSFETs combine a vertical structure with the manufacturer's strip layout to produce some of the lowest on-resistance and gate charge values ever recorded. They are consequently appropriate for high-efficiency converters that have the highest requirements.

Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Maximum junction temperature (TJ(max))
Continuous drain current (ID)

Applications
Switching applications
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
Small motor control
Switch Mode Power Supplies (SMPS)

STF7NM60N More Descriptions

N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in TO-220FP package
Trans MOSFET N-CH 600V 5A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N CH, 600V, 4.7A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.84ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STF7NM60N.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

JESD-609 Code

Terminal Finish

Avalanche Energy Rating (Eas)

Nominal Vgs

Contact Plating

View Compare
STF7NM60N

STMicroelectronics

16 Weeks

Through Hole

Through Hole

TO-220-5 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

Active

1 (Unlimited)

3

EAR99

900MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

3

1

20W Tc

Single

ENHANCEMENT MODE

20W

ISOLATED

7 ns

N-Channel

SWITCHING

900m Ω @ 2.5A, 10V

4V @ 250μA

363pF @ 50V

5A Tc

14nC @ 10V

10ns

10V

±25V

12 ns

26 ns

5A

3V

TO-220AB

25V

5A

600V

20A

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
STF7NM80

STMicroelectronics

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

20 ns

N-Channel

SWITCHING

1.05 Ω @ 3.25A, 10V

5V @ 250μA

620pF @ 25V

6.5A Tc

18nC @ 10V

8ns

10V

±30V

10 ns

35 ns

6.5A

-

TO-220AB

30V

-

800V

26A

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

e3

Matte Tin (Sn) - annealed

240 mJ

4 V

-

STF7NM60N vs STF7NM80
STF7N95K3

STMicroelectronics

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH3™

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

14 ns

N-Channel

SWITCHING

1.35 Ω @ 3.6A, 10V

5V @ 100μA

1031pF @ 100V

7.2A Tc

33nC @ 10V

9ns

10V

±30V

23 ns

36 ns

7.2A

-

TO-220AB

30V

-

950V

28.8A

16.4mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

-

-

e3

Matte Tin (Sn) - annealed

220 mJ

-

-

STF7NM60N vs STF7N95K3
STF7N80K5

STMicroelectronics

17 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-55°C~150°C TJ

Tube

SuperMESH5™

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF7N

-

-

25W Tc

Single

-

25W

-

11.3 ns

N-Channel

-

1.2 Ω @ 3A, 10V

5V @ 100μA

360pF @ 100V

6A Tc

13.4nC @ 10V

8.3ns

10V

±30V

22.2 ns

23.7 ns

6A

-

-

30V

6A

800V

-

16.4mm

10.6mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

e3

-

-

-

Tin

STF7NM60N vs STF7N80K5