STMicroelectronics STD6NK50ZT4
- Part Number:
- STD6NK50ZT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3554188-STD6NK50ZT4
- Description:
- MOSFET N-CH 500V 5.6A DPAK
- ECAD Model:
-
- Datasheet:
- STD6NK50ZT4
STMicroelectronics STD6NK50ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD6NK50ZT4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance1.2Ohm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating5.6A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTD6N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.2 Ω @ 2.8A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.6A Tc
- Gate Charge (Qg) (Max) @ Vgs24.6nC @ 10V
- Rise Time23.5ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)23 ns
- Turn-Off Delay Time31 ns
- Continuous Drain Current (ID)5.6A
- Threshold Voltage3.75V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)22.4A
- Nominal Vgs3.75 V
- Height2.4mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD6NK50ZT4 Description
STD6NK50ZT4 is a 500v N-Channel Zener-Protected SuperMESH? MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST’s well-established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.
STD6NK50ZT4 Features
Typical RDS(on) = 0.93 ?
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
STD6NK50ZT4 Applications
High current, high-speed switching
Off-line power supplies
Adaptors
PFC
Lighting
STD6NK50ZT4 is a 500v N-Channel Zener-Protected SuperMESH? MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST’s well-established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.
STD6NK50ZT4 Features
Typical RDS(on) = 0.93 ?
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
STD6NK50ZT4 Applications
High current, high-speed switching
Off-line power supplies
Adaptors
PFC
Lighting
STD6NK50ZT4 More Descriptions
N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET
N-Channel 500 V 1.2 Ohm Surface Mount SuperMESH MosFet - TO-252-3
Trans MOSFET N-CH 500V 5.6A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 500V 5.6A DPAK
Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N Ch Power Mosfet, Supermesh, 500V, 5.6A, Dpak; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:90W Rohs Compliant: Yes |Stmicroelectronics STD6NK50ZT4
MOSFET, N CH, 500V, 5.6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.93ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
N-Channel 500 V 1.2 Ohm Surface Mount SuperMESH MosFet - TO-252-3
Trans MOSFET N-CH 500V 5.6A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 500V 5.6A DPAK
Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N Ch Power Mosfet, Supermesh, 500V, 5.6A, Dpak; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:90W Rohs Compliant: Yes |Stmicroelectronics STD6NK50ZT4
MOSFET, N CH, 500V, 5.6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.93ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
The three parts on the right have similar specifications to STD6NK50ZT4.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureCase ConnectionDrain Current-Max (Abs) (ID)Lifecycle StatusFactory Lead TimeDrain to Source Voltage (Vdss)WeightNumber of ChannelsView Compare
-
STD6NK50ZT4Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Not For New Designs1 (Unlimited)2EAR991.2OhmMatte Tin (Sn) - annealedFET General Purpose Power500VMOSFET (Metal Oxide)GULL WING2605.6A30STD6N3R-PSSO-G2190W TcSingleENHANCEMENT MODE90W12 nsN-ChannelSWITCHING1.2 Ω @ 2.8A, 10V4.5V @ 50μA690pF @ 25V5.6A Tc24.6nC @ 10V23.5ns10V±30V23 ns31 ns5.6A3.75V30V500V22.4A3.75 V2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free--------- -
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ Ve3Obsolete1 (Unlimited)2EAR998MOhmMatte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)GULL WING260-30STD60N3R-PSSO-G2160W TcSingleENHANCEMENT MODE60W6 nsN-ChannelSWITCHING8m Ω @ 24A, 10V3V @ 250μA1350pF @ 25V48A Tc8.8nC @ 5V33ns5V 10V±20V4.2 ns19 ns24A1.8V22V30V--2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead FreeULTRA-LOW RESISTANCEDRAIN48A-----
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)SuperMESH3™e3Active1 (Unlimited)2EAR991.2OhmMatte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)GULL WING260--STD6N3R-PSSO-G2190W TcSingleENHANCEMENT MODE90W22 nsN-ChannelSWITCHING1.28 Ω @ 2.8A, 10V4.5V @ 50μA706pF @ 50V5.5A Tc25.7nC @ 10V12.5ns10V±30V19 ns49 ns5.5A3.75V30V650V22A-2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead FreeULTRA LOW-ON RESISTANCE--ACTIVE (Last Updated: 8 months ago)12 Weeks620V--
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~150°C TJCut Tape (CT)MDmesh™-Active1 (Unlimited)-EAR99----MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIEDSTD6N---60W Tc---19 nsN-Channel-1.35 Ω @ 2A, 10V4V @ 250μA226pF @ 100V4A Tc9.8nC @ 10V7ns10V±25V20 ns6.5 ns4A3V25V650V-----No SVHC-ROHS3 Compliant-----16 Weeks-3.949996g1
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
07 September 2023
What Is The Difference Between NE5532 And RC4558D?
Ⅰ. Overview of NE5532NE5532 is a dual operational amplifier chip with excellent performance and low noise characteristics. Its circuit design is similar to that of a common operational... -
07 September 2023
TPC8129 Internal Circuit, Specifications, Application and Marking
Ⅰ. Overview of TPC8129TPC8129 is a product of Toshiba, a Japanese comprehensive electronic and electrical company. It is a chip for LED driver circuits and is mainly used... -
12 September 2023
The Difference Between L293D and L298N
In this article we will explore the main differences between the L293D and L298N motor drivers. Both motor drives have their own unique features and applications. Understanding the... -
12 September 2023
Comprehensive Analysis of CR123A battery: Features, Applications and Purchase
Ⅰ. CR123A overviewThe CR123A battery, classified under the non-rechargeable (primary) category, is a high-performance power source with distinct specifications. Featuring a robust lithium manganese composition, it boasts a...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.