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STD60N3LH5

STMicroelectronics STD60N3LH5

Part Number:
STD60N3LH5
Manufacturer:
STMicroelectronics
Ventron No:
2486806-STD60N3LH5
Description:
MOSFET N-CH 30V 48A DPAK
ECAD Model:
Datasheet:
STD60N3LH5

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Specifications
STMicroelectronics STD60N3LH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD60N3LH5.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ V
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    8MOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD60N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    60W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    60W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 24A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    48A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.8nC @ 5V
  • Rise Time
    33ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4.2 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    24A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    22V
  • Drain Current-Max (Abs) (ID)
    48A
  • Drain to Source Breakdown Voltage
    30V
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD60N3LH5 Description
STD60N3LH5 is a 35v N-channel STripFET? V Power MOSFET. This STD60N3LH5 is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET?V technology. The STMicroelectronics STD60N3LH5 has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.

STD60N3LH5 Features
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses

STD60N3LH5 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
STD60N3LH5 More Descriptions
MOSFET Transistor, N Channel, 24 A, 30 V, 7.6 mohm, 10 V, 1.8 V
N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK package
Power Field-Effect Transistor, 48A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 30V, 48A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to STD60N3LH5.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Manufacturer Package Identifier
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Reach Compliance Code
    Qualification Status
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Drain to Source Voltage (Vdss)
    View Compare
  • STD60N3LH5
    STD60N3LH5
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ V
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    8MOhm
    Matte Tin (Sn) - annealed
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    STD60N
    3
    R-PSSO-G2
    1
    60W Tc
    Single
    ENHANCEMENT MODE
    60W
    DRAIN
    6 ns
    N-Channel
    SWITCHING
    8m Ω @ 24A, 10V
    3V @ 250μA
    1350pF @ 25V
    48A Tc
    8.8nC @ 5V
    33ns
    5V 10V
    ±20V
    4.2 ns
    19 ns
    24A
    1.8V
    22V
    48A
    30V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD65N3LLH5
    STD65N3LLH5
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ V
    -
    Active
    1 (Unlimited)
    2
    EAR99
    -
    -
    ULTRA-LOW RESISTANCE
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    STD65N
    3
    R-PSSO-G2
    1
    50W Tc
    Single
    ENHANCEMENT MODE
    50W
    DRAIN
    -
    N-Channel
    SWITCHING
    6.9m Ω @ 32.5A, 10V
    3V @ 250μA
    1290pF @ 25V
    65A Tc
    8nC @ 4.5V
    11.2ns
    4.5V 10V
    ±22V
    6 ns
    32.4 ns
    65A
    -
    22V
    -
    30V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    Figure 19
    0.0097Ohm
    260A
    -
    -
    -
    -
    -
    STD60N3LH5 vs STD65N3LLH5
  • STD6NM60N-1
    STD6NM60N-1
    STMicroelectronics
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    -
    Matte Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    260
    30
    STD6N
    3
    -
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    -
    -
    N-Channel
    SWITCHING
    920m Ω @ 2.3A, 10V
    4V @ 250μA
    420pF @ 50V
    4.6A Tc
    13nC @ 10V
    8ns
    10V
    ±25V
    9 ns
    40 ns
    4.6A
    -
    25V
    -
    600V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    0.92Ohm
    18.4A
    not_compliant
    Not Qualified
    65 mJ
    -
    -
    STD60N3LH5 vs STD6NM60N-1
  • STD6N62K3
    STD6N62K3
    STMicroelectronics
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    SuperMESH3™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    1.2Ohm
    Matte Tin (Sn) - annealed
    ULTRA LOW-ON RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    STD6N
    3
    R-PSSO-G2
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    -
    22 ns
    N-Channel
    SWITCHING
    1.28 Ω @ 2.8A, 10V
    4.5V @ 50μA
    706pF @ 50V
    5.5A Tc
    25.7nC @ 10V
    12.5ns
    10V
    ±30V
    19 ns
    49 ns
    5.5A
    3.75V
    30V
    -
    650V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    -
    -
    22A
    -
    -
    -
    12 Weeks
    620V
    STD60N3LH5 vs STD6N62K3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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