STMicroelectronics STB80NF55-08-1

Name: STB80NF55-08-1
Brand: STMicroelectronics
SKU: 2488506-STB80NF55-08-1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB80NF55-08-1

Manufacturer:: STMicroelectronics

Ventron No:: 2488506-STB80NF55-08-1

Description:: MOSFET N-CH 55V 80A I2PAK

ECAD Model:

Datasheet:: STP80NF55-08, STB80NF55-08/-01

Specifications

STMicroelectronics STB80NF55-08-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB80NF55-08-1.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
245
Current Rating
80A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STB80N
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
155nC @ 10V
Rise Time
85ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
80A
Drain-source On Resistance-Max
0.008Ohm
Pulsed Drain Current-Max (IDM)
320A
Avalanche Energy Rating (Eas)
870 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

STB80NF55-08-1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 870 mJ.A device's maximum input capacitance is 3850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.This device uses no drive voltage (10V) to reduce its overall power consumption.

STB80NF55-08-1 Features
the avalanche energy rating (Eas) is 870 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.

STB80NF55-08-1 Applications
There are a lot of STMicroelectronics
STB80NF55-08-1 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

STB80NF55-08-1 More Descriptions

MOSFET N-CH 55V 80A I2PAK
TDK CGA6M3C0G2E153J200AA SMD Multilayer Ceramic Capacitor, 1210 [3225 Metric], 0.015 F, 250 V,5%, C0G / NP0, CGA Series
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Product Comparison

The three parts on the right have similar specifications to STB80NF55-08-1.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Number of Pins

Pbfree Code

Resistance

Additional Feature

Terminal Form

Reach Compliance Code

Element Configuration

Power Dissipation

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Termination

Turn On Delay Time

Threshold Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lifecycle Status

Factory Lead Time

View Compare
STB80NF55-08-1

STMicroelectronics

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

TIN

FET General Purpose Power

55V

MOSFET (Metal Oxide)

SINGLE

245

80A

NOT SPECIFIED

STB80N

3

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

8m Ω @ 40A, 10V

4V @ 250μA

3850pF @ 25V

80A Tc

155nC @ 10V

85ns

10V

±20V

80A

0.008Ohm

320A

870 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STB8NM60N

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

-

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

245

-

NOT SPECIFIED

STB8N

4

R-PSSO-G2

Not Qualified

1

-

70W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

650m Ω @ 3.5A, 10V

4V @ 250μA

560pF @ 50V

7A Tc

19nC @ 10V

12ns

10V

±25V

7A

-

28A

200 mJ

ROHS3 Compliant

Lead Free

3

yes

650mOhm

AVALANCHE ENERGY RATED

GULL WING

not_compliant

Single

70W

10 ns

40 ns

25V

7A

600V

-

-

-

-

-

-

-

-

-

-

-

-

STB80NF55-08-1 vs STB8NM60N
STB80PF55T4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

Other Transistors

-60V

MOSFET (Metal Oxide)

-

245

-300mA

30

STB80P

4

R-PSSO-G2

-

1

-

300W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

18m Ω @ 40A, 10V

4V @ 250μA

5500pF @ 25V

80A Tc

258nC @ 10V

190ns

10V

±16V

40A

-

-

-

ROHS3 Compliant

Lead Free

3

yes

18mOhm

-

GULL WING

-

Single

300W

80 ns

165 ns

16V

80A

-55V

SMD/SMT

35 ns

3V

55V

3 V

4.6mm

10.4mm

9.35mm

No SVHC

No

-

-

STB80NF55-08-1 vs STB80PF55T4
STB85NF55T4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

55V

MOSFET (Metal Oxide)

-

245

80A

30

STB85N

4

R-PSSO-G2

-

1

-

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

8m Ω @ 40A, 10V

4V @ 250μA

3700pF @ 25V

80A Tc

150nC @ 10V

100ns

10V

±20V

40A

0.008Ohm

-

980 mJ

ROHS3 Compliant

Lead Free

3

-

-

-

GULL WING

-

Single

300W

35 ns

70 ns

20V

-

55V

SMD/SMT

25 ns

3V

55V

3 V

4.6mm

10.4mm

9.35mm

No SVHC

No

ACTIVE (Last Updated: 7 months ago)

12 Weeks

STB80NF55-08-1 vs STB85NF55T4