STMicroelectronics STB80NF03L-04T4
- Part Number:
- STB80NF03L-04T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2849232-STB80NF03L-04T4
- Description:
- MOSFET N-CH 30V 80A D2PAK
- Datasheet:
- STB80NF03L-04T4
STMicroelectronics STB80NF03L-04T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB80NF03L-04T4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-60°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance4mOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating80A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB80N
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
- Rise Time270ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)95 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)80A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB80NF03L-04T4 Overview
A device's maximal input capacitance is 5500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
STB80NF03L-04T4 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 110 ns
STB80NF03L-04T4 Applications
There are a lot of STMicroelectronics
STB80NF03L-04T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 5500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
STB80NF03L-04T4 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 110 ns
STB80NF03L-04T4 Applications
There are a lot of STMicroelectronics
STB80NF03L-04T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB80NF03L-04T4 More Descriptions
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Mosfet, N-Ch, 30V, 80A, 175Deg C, 300W Rohs Compliant: Yes |Stmicroelectronics STB80NF03L-04T4
STB80NF03L Series 30 V 0.0035 Ohm 80 A N-Ch. STripFET II Power Mosfet - D2PAK-3
Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Mosfet, N-Ch, 30V, 80A, 175Deg C, 300W Rohs Compliant: Yes |Stmicroelectronics STB80NF03L-04T4
STB80NF03L Series 30 V 0.0035 Ohm 80 A N-Ch. STripFET II Power Mosfet - D2PAK-3
Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
The three parts on the right have similar specifications to STB80NF03L-04T4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Pbfree CodeAdditional FeatureReach Compliance CodeQualification StatusAvalanche Energy Rating (Eas)Drain to Source Voltage (Vdss)View Compare
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STB80NF03L-04T4ACTIVE (Last Updated: 7 months ago)12 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-60°C~175°C TJTape & Reel (TR)STripFET™ IIe3Active1 (Unlimited)2EAR994mOhmMatte Tin (Sn) - annealedFET General Purpose Power30VMOSFET (Metal Oxide)GULL WING24580A30STB80N4R-PSSO-G21300W TcSingleENHANCEMENT MODE300WDRAIN30 nsN-ChannelSWITCHING4m Ω @ 40A, 10V1V @ 250μA5500pF @ 25V80A Tc110nC @ 4.5V270ns4.5V 10V±20V95 ns110 ns80A20V30VNoROHS3 CompliantLead Free---------
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ACTIVE (Last Updated: 7 months ago)16 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON150°C TJTape & Reel (TR)MDmesh™ Ve3Active1 (Unlimited)2EAR9923MOhmMatte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)GULL WING245-30STB80N4R-PSSO-G21190W TcSingleENHANCEMENT MODE190W--N-ChannelSWITCHING23m Ω @ 30.5A, 10V5V @ 250μA4329pF @ 50V61A Tc104nC @ 10V31ns10V±25V176 ns131 ns61A25V200VNoROHS3 CompliantLead Free65A260A------
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)MDmesh™ IIe3Obsolete1 (Unlimited)2-650mOhmMatte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)GULL WING245-NOT SPECIFIEDSTB8N4R-PSSO-G2170W TcSingleENHANCEMENT MODE70W--N-ChannelSWITCHING650m Ω @ 3.5A, 10V4V @ 250μA560pF @ 50V7A Tc19nC @ 10V12ns10V±25V10 ns40 ns7A25V600V-ROHS3 CompliantLead Free7A28AyesAVALANCHE ENERGY RATEDnot_compliantNot Qualified200 mJ-
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ACTIVE (Last Updated: 7 months ago)12 Weeks-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, STripFET™-Active1 (Unlimited)------MOSFET (Metal Oxide)----STB80N---300W Tc-----N-Channel-8m Ω @ 40A, 10V4V @ 250μA3740pF @ 15V80A Tc112nC @ 10V-10V±20V------ROHS3 Compliant--------55V
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