STB80NF03L-04T4

STMicroelectronics STB80NF03L-04T4

Part Number:
STB80NF03L-04T4
Manufacturer:
STMicroelectronics
Ventron No:
2849232-STB80NF03L-04T4
Description:
MOSFET N-CH 30V 80A D2PAK
ECAD Model:
Datasheet:
STB80NF03L-04T4

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Specifications
STMicroelectronics STB80NF03L-04T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB80NF03L-04T4.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -60°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    4mOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    80A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB80N
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    30 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 4.5V
  • Rise Time
    270ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    95 ns
  • Turn-Off Delay Time
    110 ns
  • Continuous Drain Current (ID)
    80A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB80NF03L-04T4 Overview
A device's maximal input capacitance is 5500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

STB80NF03L-04T4 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 110 ns


STB80NF03L-04T4 Applications
There are a lot of STMicroelectronics
STB80NF03L-04T4 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB80NF03L-04T4 More Descriptions
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2 Tab) D2PAK T/R
Mosfet, N-Ch, 30V, 80A, 175Deg C, 300W Rohs Compliant: Yes |Stmicroelectronics STB80NF03L-04T4
STB80NF03L Series 30 V 0.0035 Ohm 80 A N-Ch. STripFET™ II Power Mosfet - D2PAK-3
Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Product Comparison
The three parts on the right have similar specifications to STB80NF03L-04T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Pbfree Code
    Additional Feature
    Reach Compliance Code
    Qualification Status
    Avalanche Energy Rating (Eas)
    Drain to Source Voltage (Vdss)
    View Compare
  • STB80NF03L-04T4
    STB80NF03L-04T4
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -60°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    4mOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    245
    80A
    30
    STB80N
    4
    R-PSSO-G2
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    30 ns
    N-Channel
    SWITCHING
    4m Ω @ 40A, 10V
    1V @ 250μA
    5500pF @ 25V
    80A Tc
    110nC @ 4.5V
    270ns
    4.5V 10V
    ±20V
    95 ns
    110 ns
    80A
    20V
    30V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STB80N20M5
    ACTIVE (Last Updated: 7 months ago)
    16 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    MDmesh™ V
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    23MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    30
    STB80N
    4
    R-PSSO-G2
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    -
    -
    N-Channel
    SWITCHING
    23m Ω @ 30.5A, 10V
    5V @ 250μA
    4329pF @ 50V
    61A Tc
    104nC @ 10V
    31ns
    10V
    ±25V
    176 ns
    131 ns
    61A
    25V
    200V
    No
    ROHS3 Compliant
    Lead Free
    65A
    260A
    -
    -
    -
    -
    -
    -
  • STB8NM60N
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    650mOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    NOT SPECIFIED
    STB8N
    4
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    -
    -
    N-Channel
    SWITCHING
    650m Ω @ 3.5A, 10V
    4V @ 250μA
    560pF @ 50V
    7A Tc
    19nC @ 10V
    12ns
    10V
    ±25V
    10 ns
    40 ns
    7A
    25V
    600V
    -
    ROHS3 Compliant
    Lead Free
    7A
    28A
    yes
    AVALANCHE ENERGY RATED
    not_compliant
    Not Qualified
    200 mJ
    -
  • STB80NF55-08AG
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, STripFET™
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STB80N
    -
    -
    -
    300W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    8m Ω @ 40A, 10V
    4V @ 250μA
    3740pF @ 15V
    80A Tc
    112nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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