STMicroelectronics STB18NF25

Name: STB18NF25
Brand: STMicroelectronics
SKU: 2479805-STB18NF25
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB18NF25

Manufacturer:: STMicroelectronics

Ventron No:: 2479805-STB18NF25

Description:: MOSFET N-CH 250V 17A D2PAK

ECAD Model:

Datasheet:: STB18NF25

Specifications

STMicroelectronics STB18NF25 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB18NF25.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
165MOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB18N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
8.8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
165m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
29.5nC @ 10V
Rise Time
17.2ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8.8 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
17A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
250V
Pulsed Drain Current-Max (IDM)
68A
Avalanche Energy Rating (Eas)
54 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB18NF25 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 54 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1000pF @ 25V.This device has a continuous drain current (ID) of [17A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 21 ns.A maximum pulsed drain current of 68A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

STB18NF25 Features
the avalanche energy rating (Eas) is 54 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 68A.

STB18NF25 Applications
There are a lot of STMicroelectronics
STB18NF25 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

STB18NF25 More Descriptions

Trans MOSFET N-CH 250V 17A Automotive 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 250V 17A D2PAK
Automotive-grade N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET II Power MOSFET in D2PAK package
N-Channel 250 V 165 mOhm 17 A Surface Mount Power MOSFET - D2PAK
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Product Comparison

The three parts on the right have similar specifications to STB18NF25.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Voltage - Rated DC

Reach Compliance Code

Current Rating

Qualification Status

Threshold Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Drain to Source Voltage (Vdss)

View Compare
STB18NF25

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, STripFET™ II

e3

Active

1 (Unlimited)

2

EAR99

165MOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

245

30

STB18N

4

R-PSSO-G2

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

8.8 ns

N-Channel

SWITCHING

165m Ω @ 8.5A, 10V

4V @ 250μA

1000pF @ 25V

17A Tc

29.5nC @ 10V

17.2ns

10V

±20V

8.8 ns

21 ns

17A

20V

250V

68A

54 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
STB16NK65Z-S

STMicroelectronics

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

-

380mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

STB16N

3

R-PSIP-T3

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

-

N-Channel

SWITCHING

500m Ω @ 6.5A, 10V

4.5V @ 100μA

2750pF @ 25V

13A Tc

89nC @ 10V

25ns

10V

±30V

17 ns

68 ns

13A

30V

650V

52A

350 mJ

-

ROHS3 Compliant

Lead Free

AVALANCHE RATED

650V

not_compliant

13A

Not Qualified

-

-

-

-

-

-

-

STB18NF25 vs STB16NK65Z-S
STB15NM60ND

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

299MOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

245

-

STB15N

4

R-PSSO-G2

1

125W Tc

Single

ENHANCEMENT MODE

125W

-

17 ns

N-Channel

SWITCHING

299m Ω @ 7A, 10V

5V @ 250μA

1250pF @ 50V

14A Tc

40nC @ 10V

20ns

10V

±25V

28 ns

47 ns

14A

25V

600V

56A

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

4V

4 V

4.6mm

10.75mm

10.4mm

No SVHC

-

STB18NF25 vs STB15NM60ND
STB130N6F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

22 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Cut Tape (CT)

STripFET™ F7

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

STB130N

-

-

-

160W Tc

-

-

-

-

-

N-Channel

-

5m Ω @ 40A, 10V

4V @ 250μA

2600pF @ 25V

80A Tc

42nC @ 10V

-

10V

±20V

-

-

80A

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

60V

STB18NF25 vs STB130N6F7