STMicroelectronics STB12NM60N-1
- Part Number:
- STB12NM60N-1
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070902-STB12NM60N-1
- Description:
- MOSFET N-CH 600V 10A I2PAK
- Datasheet:
- STx12NM60N(-1)
STMicroelectronics STB12NM60N-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB12NM60N-1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)245
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSTB12N
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs410m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds960pF @ 50V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs30.5nC @ 10V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)25V
- Drain-source On Resistance-Max0.41Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)40A
- Avalanche Energy Rating (Eas)200 mJ
- RoHS StatusROHS3 Compliant
STB12NM60N-1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 960pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STB12NM60N-1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
STB12NM60N-1 Applications
There are a lot of STMicroelectronics
STB12NM60N-1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 960pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STB12NM60N-1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
STB12NM60N-1 Applications
There are a lot of STMicroelectronics
STB12NM60N-1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
STB12NM60N-1 More Descriptions
N-channel 600V - 0.35Ohm - 10A - D2/I2PAK - TO-220/FP - TO-247
Power MOSFET Transistors N Ch 1500V 2.5A Hi Vltg Pwr MOSFET
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Power MOSFET Transistors N Ch 1500V 2.5A Hi Vltg Pwr MOSFET
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
The three parts on the right have similar specifications to STB12NM60N-1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusECCN CodeResistanceJESD-30 CodeCase ConnectionLifecycle StatusFactory Lead TimeDrain to Source Voltage (Vdss)Lead FreeView Compare
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STB12NM60N-1Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)245not_compliant40STB12N3Not Qualified190W TcSingleENHANCEMENT MODE90WN-ChannelSWITCHING410m Ω @ 5A, 10V4V @ 250μA960pF @ 50V10A Tc30.5nC @ 10V9ns10V±25V10 ns60 ns10A25V0.41Ohm600V40A200 mJROHS3 Compliant---------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~175°C TJTubeSTripFET™ IIe3Obsolete1 (Unlimited)3Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIEDSTB141N3Not Qualified1300W TcSingleENHANCEMENT MODE300WN-ChannelSWITCHING8m Ω @ 40A, 10V4V @ 250μA5300pF @ 25V80A Tc142nC @ 10V150ns10V±20V45 ns125 ns80A20V-55V320A1300 mJROHS3 CompliantEAR99-6.5mOhmR-PSIP-T3DRAIN----
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIEDSTB13N3Not Qualified1100W TcSingleENHANCEMENT MODE100WN-ChannelSWITCHING320m Ω @ 6A, 10V4V @ 250μA960pF @ 50V12A Tc30nC @ 10V15ns10V±25V10 ns40 ns12A25V-500V48A200 mJROHS3 Compliant--------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJCut Tape (CT)STripFET™ F7-Active1 (Unlimited)---MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIEDSTB130N---160W Tc---N-Channel-5m Ω @ 40A, 10V4V @ 250μA2600pF @ 25V80A Tc42nC @ 10V-10V±20V--80A-----ROHS3 CompliantEAR99---ACTIVE (Last Updated: 8 months ago)22 Weeks60VLead Free
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