Vishay Siliconix SI7336ADP-T1-E3
- Part Number:
- SI7336ADP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848459-SI7336ADP-T1-E3
- Description:
- MOSFET N-CH 30V 30A PPAK SO-8
- Datasheet:
- SI7336ADP-T1-E3
Vishay Siliconix SI7336ADP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7336ADP-T1-E3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance3mOhm
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max5.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation5.4W
- Case ConnectionDRAIN
- Turn On Delay Time24 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5600pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Ta
- Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
- Rise Time16ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)30A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)70A
- Nominal Vgs1 V
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7336ADP-T1-E3 Overview
The maximum input capacitance of this device is 5600pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 70A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 24 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7336ADP-T1-E3 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V
SI7336ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7336ADP-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 5600pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 70A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 24 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7336ADP-T1-E3 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V
SI7336ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7336ADP-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI7336ADP-T1-E3 More Descriptions
Single N-Channel 30 V 0.003 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI7336ADP-T1-E3
Power Field-Effect Transistor, 30A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 30A 5.4W 3.0mohm @10V
N-CH POWERPAK SO-8 BWL 30V 3.0MOHM @ 10V
Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI7336ADP-T1-E3
Power Field-Effect Transistor, 30A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 30A 5.4W 3.0mohm @10V
N-CH POWERPAK SO-8 BWL 30V 3.0MOHM @ 10V
The three parts on the right have similar specifications to SI7336ADP-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Terminal FinishDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)View Compare
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SI7336ADP-T1-E314 WeeksTinSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesActive1 (Unlimited)5EAR993mOhmULTRA-LOW RESISTANCEFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308R-XDSO-C5115.4W TaSingleENHANCEMENT MODE5.4WDRAIN24 nsN-ChannelSWITCHING3m Ω @ 25A, 10V3V @ 250μA5600pF @ 15V30A Ta50nC @ 4.5V16ns4.5V 10V±20V32 ns90 ns30A1V20V30V70A1 V1.04mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free-------
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14 WeeksTinSurface MountSurface MountPowerPAK® 1212-88-SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2014e3-Active1 (Unlimited)5EAR99---MOSFET (Metal Oxide)DUALC BENDNOT SPECIFIEDNOT SPECIFIED-S-PDSO-C51-3.8W Ta 52W Tc-ENHANCEMENT MODE3.8WDRAIN8 nsP-ChannelSWITCHING315m Ω @ 2.4A, 10V4V @ 250μA880pF @ 75V8.9A Tc30nC @ 10V9ns7.5V 10V±30V8 ns23 ns-8.9A-30V-150V-----Unknown-ROHS3 Compliant-SINGLE WITH BUILT-IN DIODE150V----
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14 WeeksTinSurface MountSurface MountPowerPAK® 1212-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)5EAR99--FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408S-XDSO-C5111.5W TaSingleENHANCEMENT MODE1.5WDRAIN8 nsN-ChannelSWITCHING19.5m Ω @ 10A, 10V1.8V @ 250μA-6.5A Ta13nC @ 5V12ns4.5V 10V±25V12 ns32 ns10A-25V30V40A1.8 V1.04mm3.3mm3.3mm-NoROHS3 Compliant---6.5A---
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--Surface MountSurface MountPowerPAK® SO-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)5EAR99--FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C51-1.8W TaSingleENHANCEMENT MODE1.8WDRAIN15 nsN-ChannelSWITCHING9.75m Ω @ 15A, 10V3V @ 250μA-9A Ta15nC @ 4.5V7ns4.5V 10V±20V9 ns46 ns9A-20V30V50A-----NoROHS3 Compliant---9AMatte Tin (Sn)0.00975Ohm45 mJ
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