SI7336ADP-T1-E3

Vishay Siliconix SI7336ADP-T1-E3

Part Number:
SI7336ADP-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2848459-SI7336ADP-T1-E3
Description:
MOSFET N-CH 30V 30A PPAK SO-8
ECAD Model:
Datasheet:
SI7336ADP-T1-E3

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Specifications
Vishay Siliconix SI7336ADP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7336ADP-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    3mOhm
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5.4W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    5.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    24 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5600pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    30A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 4.5V
  • Rise Time
    16ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    90 ns
  • Continuous Drain Current (ID)
    30A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Nominal Vgs
    1 V
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7336ADP-T1-E3 Overview
The maximum input capacitance of this device is 5600pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 70A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 24 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI7336ADP-T1-E3 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V


SI7336ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7336ADP-T1-E3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI7336ADP-T1-E3 More Descriptions
Single N-Channel 30 V 0.003 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R
N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI7336ADP-T1-E3
Power Field-Effect Transistor, 30A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 30A 5.4W 3.0mohm @10V
N-CH POWERPAK SO-8 BWL 30V 3.0MOHM @ 10V
Product Comparison
The three parts on the right have similar specifications to SI7336ADP-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Terminal Finish
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    View Compare
  • SI7336ADP-T1-E3
    SI7336ADP-T1-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    3mOhm
    ULTRA-LOW RESISTANCE
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-XDSO-C5
    1
    1
    5.4W Ta
    Single
    ENHANCEMENT MODE
    5.4W
    DRAIN
    24 ns
    N-Channel
    SWITCHING
    3m Ω @ 25A, 10V
    3V @ 250μA
    5600pF @ 15V
    30A Ta
    50nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    32 ns
    90 ns
    30A
    1V
    20V
    30V
    70A
    1 V
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • SI7315DN-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    -
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    NOT SPECIFIED
    NOT SPECIFIED
    -
    S-PDSO-C5
    1
    -
    3.8W Ta 52W Tc
    -
    ENHANCEMENT MODE
    3.8W
    DRAIN
    8 ns
    P-Channel
    SWITCHING
    315m Ω @ 2.4A, 10V
    4V @ 250μA
    880pF @ 75V
    8.9A Tc
    30nC @ 10V
    9ns
    7.5V 10V
    ±30V
    8 ns
    23 ns
    -8.9A
    -
    30V
    -150V
    -
    -
    -
    -
    -
    Unknown
    -
    ROHS3 Compliant
    -
    SINGLE WITH BUILT-IN DIODE
    150V
    -
    -
    -
    -
  • SI7326DN-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    S-XDSO-C5
    1
    1
    1.5W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    19.5m Ω @ 10A, 10V
    1.8V @ 250μA
    -
    6.5A Ta
    13nC @ 5V
    12ns
    4.5V 10V
    ±25V
    12 ns
    32 ns
    10A
    -
    25V
    30V
    40A
    1.8 V
    1.04mm
    3.3mm
    3.3mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    6.5A
    -
    -
    -
  • SI7392DP-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    -
    1.8W Ta
    Single
    ENHANCEMENT MODE
    1.8W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    9.75m Ω @ 15A, 10V
    3V @ 250μA
    -
    9A Ta
    15nC @ 4.5V
    7ns
    4.5V 10V
    ±20V
    9 ns
    46 ns
    9A
    -
    20V
    30V
    50A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    9A
    Matte Tin (Sn)
    0.00975Ohm
    45 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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