Vishay Siliconix SI7326DN-T1-GE3

Name: SI7326DN-T1-GE3
Brand: Vishay Siliconix
SKU: 3070571-SI7326DN-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7326DN-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 3070571-SI7326DN-T1-GE3

Description:: MOSFET N-CH 30V 6.5A PPAK 1212-8

ECAD Model:

Datasheet:: SI7326DN-T1-GE3

Specifications

Vishay Siliconix SI7326DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7326DN-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
S-XDSO-C5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
19.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C
6.5A Ta
Gate Charge (Qg) (Max) @ Vgs
13nC @ 5V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
6.5A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
40A
Nominal Vgs
1.8 V
Height
1.04mm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SI7326DN-T1-GE3 Overview
This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 6.5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI7326DN-T1-GE3 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 40A.

SI7326DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7326DN-T1-GE3 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

SI7326DN-T1-GE3 More Descriptions

Trans MOSFET N-CH 30V 6.5A 8-Pin PowerPAK 1212 T/R
N CHANNEL MOSFET, 30V, 10A POWERPAK; Tra
N-CH 30-V (D-S) FAST SWITCHING MOSFET
MOSFET 30V 10A 3.5W 19.5mohm @ 10V
French Electronic Distributor since 1988
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:10000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.03ohm; Rds(on) Test Voltage, Vgs:25V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to SI7326DN-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

Radiation Hardening

RoHS Status

Configuration

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

REACH SVHC

Weight

Resistance

Additional Feature

Threshold Voltage

Lead Free

View Compare
SI7326DN-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

DRAIN

8 ns

N-Channel

SWITCHING

19.5m Ω @ 10A, 10V

1.8V @ 250μA

6.5A Ta

13nC @ 5V

12ns

4.5V 10V

±25V

12 ns

32 ns

10A

25V

6.5A

30V

40A

1.8 V

1.04mm

3.3mm

3.3mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
SI7315DN-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

e3

-

Active

1 (Unlimited)

5

EAR99

-

MOSFET (Metal Oxide)

DUAL

C BEND

NOT SPECIFIED

NOT SPECIFIED

-

S-PDSO-C5

1

-

3.8W Ta 52W Tc

-

ENHANCEMENT MODE

3.8W

DRAIN

8 ns

P-Channel

SWITCHING

315m Ω @ 2.4A, 10V

4V @ 250μA

8.9A Tc

30nC @ 10V

9ns

7.5V 10V

±30V

8 ns

23 ns

-8.9A

30V

-

-150V

-

-

-

-

-

-

ROHS3 Compliant

SINGLE WITH BUILT-IN DIODE

880pF @ 75V

150V

Unknown

-

-

-

-

-

SI7326DN-T1-GE3 vs SI7315DN-T1-GE3
SI7326DN-T1-E3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

DRAIN

8 ns

N-Channel

SWITCHING

19.5m Ω @ 10A, 10V

1.8V @ 250μA

6.5A Ta

13nC @ 5V

12ns

4.5V 10V

±25V

12 ns

32 ns

6.5A

25V

-

30V

40A

-

1.04mm

3.3mm

3.3mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

SI7326DN-T1-GE3 vs SI7326DN-T1-E3
SI7336ADP-T1-E3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

R-XDSO-C5

1

1

5.4W Ta

Single

ENHANCEMENT MODE

5.4W

DRAIN

24 ns

N-Channel

SWITCHING

3m Ω @ 25A, 10V

3V @ 250μA

30A Ta

50nC @ 4.5V

16ns

4.5V 10V

±20V

32 ns

90 ns

30A

20V

-

30V

70A

1 V

1.04mm

4.9mm

5.89mm

No

ROHS3 Compliant

-

5600pF @ 15V

-

Unknown

506.605978mg

3mOhm

ULTRA-LOW RESISTANCE

1V

Lead Free

SI7326DN-T1-GE3 vs SI7336ADP-T1-E3