SI5482DU-T1-E3

Vishay Siliconix SI5482DU-T1-E3

Part Number:
SI5482DU-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3813735-SI5482DU-T1-E3
Description:
MOSFET N-CH 30V 12A PPAK CHIPFET
ECAD Model:
Datasheet:
SI5482DU-T1-E3

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Specifications
Vishay Siliconix SI5482DU-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5482DU-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® ChipFET™ Single
  • Supplier Device Package
    PowerPAK® ChipFet Single
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2017
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    3.1W Ta 31W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    15mOhm @ 7.4A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1610pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    51nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    12A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance
    1.61nF
  • Drain to Source Resistance
    15mOhm
  • Rds On Max
    15 mΩ
  • Height
    750μm
  • Length
    3mm
  • Width
    1.9mm
  • RoHS Status
    ROHS3 Compliant
Description
SI5482DU-T1-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1610pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 15mOhm.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI5482DU-T1-E3 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 15mOhm
a 30V drain to source voltage (Vdss)


SI5482DU-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5482DU-T1-E3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI5482DU-T1-E3 More Descriptions
MOSFET N-CH 30V 12A PPAK CHIPFET
OBSOLETE-USE SI5418DU-T1-GE3
MOSFET, N, POWERPAK; Transistor type:TrenchFET; Voltage, Vds typ:30V; Current, Id cont:12A; Resistance, Rds on:0.0175R; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:2V; Case style:POWER PAK; Base number:5482; Charge, gate n-channel:16nC; Current, Idm pulse:40A; Power dissipation:31mW; Termination Type:SMD; Transistor polarity:N; Voltage, Vds max:30V; Voltage, Vgs th min:0.6V
Product Comparison
The three parts on the right have similar specifications to SI5482DU-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Number of Pins
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Operating Mode
    Power Dissipation
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    REACH SVHC
    Radiation Hardening
    Lead Free
    Factory Lead Time
    Transistor Application
    Drain-source On Resistance-Max
    Weight
    View Compare
  • SI5482DU-T1-E3
    SI5482DU-T1-E3
    Surface Mount
    Surface Mount
    PowerPAK® ChipFET™ Single
    PowerPAK® ChipFet Single
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2017
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    3.1W Ta 31W Tc
    Single
    5 ns
    N-Channel
    15mOhm @ 7.4A, 10V
    2V @ 250μA
    1610pF @ 15V
    12A Tc
    51nC @ 10V
    10ns
    30V
    4.5V 10V
    ±12V
    10 ns
    35 ns
    12A
    12V
    30V
    1.61nF
    15mOhm
    15 mΩ
    750μm
    3mm
    1.9mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI5402BDC-T1-E3
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    1.3W Ta
    Single
    10 ns
    N-Channel
    35m Ω @ 4.9A, 10V
    3V @ 250μA
    -
    4.9A Ta
    20nC @ 10V
    10ns
    -
    4.5V 10V
    ±20V
    10 ns
    27 ns
    6.7A
    20V
    30V
    -
    -
    -
    1.0922mm
    3.0988mm
    1.7018mm
    ROHS3 Compliant
    8
    SILICON
    e3
    yes
    8
    EAR99
    35mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    DUAL
    C BEND
    260
    30
    8
    1
    ENHANCEMENT MODE
    2.5W
    20V
    4.9A
    20A
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
  • SI5424DC-T1-E3
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    2.5W Ta 6.25W Tc
    Single
    -
    N-Channel
    24m Ω @ 4.8A, 10V
    2.3V @ 250μA
    950pF @ 15V
    6A Tc
    32nC @ 10V
    38ns
    -
    4.5V 10V
    ±25V
    9 ns
    26 ns
    6A
    25V
    30V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    8
    SILICON
    e3
    yes
    8
    EAR99
    -
    MATTE TIN
    FET General Purpose Power
    DUAL
    C BEND
    260
    40
    8
    1
    ENHANCEMENT MODE
    2.5W
    -
    6A
    40A
    -
    No
    -
    21 Weeks
    SWITCHING
    0.024Ohm
    -
  • SI5449DC-T1-E3
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    1206-8 ChipFET™
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1.3W Ta
    Single
    13 ns
    P-Channel
    85mOhm @ 3.1A, 4.5V
    600mV @ 250μA (Min)
    -
    3.1A Ta
    11nC @ 4.5V
    14ns
    30V
    2.5V 4.5V
    ±12V
    14 ns
    35 ns
    -4.3A
    12V
    -
    -
    85mOhm
    85 mΩ
    1.1mm
    3.05mm
    1.65mm
    ROHS3 Compliant
    8
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.3W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    84.99187mg
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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