Vishay Siliconix SI5482DU-T1-E3
- Part Number:
- SI5482DU-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3813735-SI5482DU-T1-E3
- Description:
- MOSFET N-CH 30V 12A PPAK CHIPFET
- Datasheet:
- SI5482DU-T1-E3
Vishay Siliconix SI5482DU-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5482DU-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® ChipFET™ Single
- Supplier Device PackagePowerPAK® ChipFet Single
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2017
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max3.1W Ta 31W Tc
- Element ConfigurationSingle
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs15mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1610pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±12V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage30V
- Input Capacitance1.61nF
- Drain to Source Resistance15mOhm
- Rds On Max15 mΩ
- Height750μm
- Length3mm
- Width1.9mm
- RoHS StatusROHS3 Compliant
SI5482DU-T1-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1610pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 15mOhm.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI5482DU-T1-E3 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 15mOhm
a 30V drain to source voltage (Vdss)
SI5482DU-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5482DU-T1-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1610pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 15mOhm.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI5482DU-T1-E3 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 15mOhm
a 30V drain to source voltage (Vdss)
SI5482DU-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5482DU-T1-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI5482DU-T1-E3 More Descriptions
MOSFET N-CH 30V 12A PPAK CHIPFET
OBSOLETE-USE SI5418DU-T1-GE3
MOSFET, N, POWERPAK; Transistor type:TrenchFET; Voltage, Vds typ:30V; Current, Id cont:12A; Resistance, Rds on:0.0175R; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:2V; Case style:POWER PAK; Base number:5482; Charge, gate n-channel:16nC; Current, Idm pulse:40A; Power dissipation:31mW; Termination Type:SMD; Transistor polarity:N; Voltage, Vds max:30V; Voltage, Vgs th min:0.6V
OBSOLETE-USE SI5418DU-T1-GE3
MOSFET, N, POWERPAK; Transistor type:TrenchFET; Voltage, Vds typ:30V; Current, Id cont:12A; Resistance, Rds on:0.0175R; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:2V; Case style:POWER PAK; Base number:5482; Charge, gate n-channel:16nC; Current, Idm pulse:40A; Power dissipation:31mW; Termination Type:SMD; Transistor polarity:N; Voltage, Vds max:30V; Voltage, Vgs th min:0.6V
The three parts on the right have similar specifications to SI5482DU-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusNumber of PinsTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsOperating ModePower DissipationThreshold VoltageDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)REACH SVHCRadiation HardeningLead FreeFactory Lead TimeTransistor ApplicationDrain-source On Resistance-MaxWeightView Compare
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SI5482DU-T1-E3Surface MountSurface MountPowerPAK® ChipFET™ SinglePowerPAK® ChipFet Single-55°C~150°C TJTape & Reel (TR)TrenchFET®2017Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)13.1W Ta 31W TcSingle5 nsN-Channel15mOhm @ 7.4A, 10V2V @ 250μA1610pF @ 15V12A Tc51nC @ 10V10ns30V4.5V 10V±12V10 ns35 ns12A12V30V1.61nF15mOhm15 mΩ750μm3mm1.9mmROHS3 Compliant----------------------------
-
Surface MountSurface Mount8-SMD, Flat Lead--55°C~150°C TJTape & Reel (TR)TrenchFET®2009Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-1.3W TaSingle10 nsN-Channel35m Ω @ 4.9A, 10V3V @ 250μA-4.9A Ta20nC @ 10V10ns-4.5V 10V±20V10 ns27 ns6.7A20V30V---1.0922mm3.0988mm1.7018mmROHS3 Compliant8SILICONe3yes8EAR9935mOhmMatte Tin (Sn)FET General Purpose PowersDUALC BEND2603081ENHANCEMENT MODE2.5W20V4.9A20ANo SVHCNoLead Free----
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Surface MountSurface Mount8-SMD, Flat Lead--55°C~150°C TJTape & Reel (TR)TrenchFET®2013Active1 (Unlimited)--MOSFET (Metal Oxide)-2.5W Ta 6.25W TcSingle-N-Channel24m Ω @ 4.8A, 10V2.3V @ 250μA950pF @ 15V6A Tc32nC @ 10V38ns-4.5V 10V±25V9 ns26 ns6A25V30V------ROHS3 Compliant8SILICONe3yes8EAR99-MATTE TINFET General Purpose PowerDUALC BEND2604081ENHANCEMENT MODE2.5W-6A40A-No-21 WeeksSWITCHING0.024Ohm-
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Surface MountSurface Mount8-SMD, Flat Lead1206-8 ChipFET™-55°C~150°C TJTape & Reel (TR)TrenchFET®2015Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)11.3W TaSingle13 nsP-Channel85mOhm @ 3.1A, 4.5V600mV @ 250μA (Min)-3.1A Ta11nC @ 4.5V14ns30V2.5V 4.5V±12V14 ns35 ns-4.3A12V--85mOhm85 mΩ1.1mm3.05mm1.65mmROHS3 Compliant8---------------1.3W---------84.99187mg
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