Vishay Siliconix SI5461EDC-T1-E3

Name: SI5461EDC-T1-E3
Brand: Vishay Siliconix
SKU: 3554558-SI5461EDC-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI5461EDC-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 3554558-SI5461EDC-T1-E3

Description:: MOSFET P-CH 20V 4.5A CHIPFET

ECAD Model:

Datasheet:: SI5461EDC-T1-E3

Specifications

Vishay Siliconix SI5461EDC-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5461EDC-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
45mOhm
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
1
Power Dissipation-Max
1.3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.3W
Turn On Delay Time
2.5 μs
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
45m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C
4.5A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Rise Time
4.5μs
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
4.5 μs
Turn-Off Delay Time
27 μs
Continuous Drain Current (ID)
-6.2A
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
4.5A
Drain to Source Breakdown Voltage
-20V
Height
1.0922mm
Length
3.0988mm
Width
1.7018mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI5461EDC-T1-E3 Overview
This device conducts a continuous drain current (ID) of -6.2A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 4.5A.When the device is turned off, a turn-off delay time of 27 μs occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 2.5 μs.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).

SI5461EDC-T1-E3 Features
a continuous drain current (ID) of -6.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 27 μs
a 20V drain to source voltage (Vdss)

SI5461EDC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5461EDC-T1-E3 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

SI5461EDC-T1-E3 More Descriptions

MOSFET; P-CH, 20V(D-S) 45MOHM CHIPFET | Siliconix / Vishay SI5461EDC-T1-E3
Trans MOSFET P-CH 20V 4.5A 8-Pin Chip FET T/R
P-Channel MOSFETs 20V 6.2A 2.5W
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.2A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:1206-8 ChipFET ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to SI5461EDC-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Series

Voltage

Current

Input Capacitance (Ciss) (Max) @ Vds

Factory Lead Time

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Drain to Source Resistance

Rds On Max

View Compare
SI5461EDC-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SMD, Flat Lead

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

45mOhm

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

1

1.3W Ta

Single

ENHANCEMENT MODE

1.3W

2.5 μs

P-Channel

45m Ω @ 5A, 4.5V

450mV @ 250μA (Min)

4.5A Ta

20nC @ 4.5V

4.5μs

20V

1.8V 4.5V

±12V

4.5 μs

27 μs

-6.2A

12V

4.5A

-20V

1.0922mm

3.0988mm

1.7018mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI5475BDC-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SMD, Flat Lead

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

-

Obsolete

1 (Unlimited)

8

EAR99

28mOhm

MATTE TIN

-

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

1

2.5W Ta 6.3W Tc

Single

ENHANCEMENT MODE

2.5W

10 ns

P-Channel

28m Ω @ 5.6A, 4.5V

1V @ 250μA

6A Ta

40nC @ 8V

15ns

-

1.8V 4.5V

±8V

72 ns

65 ns

7.7A

8V

-

12V

1.0922mm

3.0988mm

1.7018mm

No

ROHS3 Compliant

Lead Free

TrenchFET®

12V

6A

1400pF @ 6V

-

-

-

-

-

-

-

-

-

-

-

SI5461EDC-T1-E3 vs SI5475BDC-T1-E3
SI5424DC-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SMD, Flat Lead

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

yes

Active

1 (Unlimited)

8

EAR99

-

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

1

2.5W Ta 6.25W Tc

Single

ENHANCEMENT MODE

2.5W

-

N-Channel

24m Ω @ 4.8A, 10V

2.3V @ 250μA

6A Tc

32nC @ 10V

38ns

-

4.5V 10V

±25V

9 ns

26 ns

6A

25V

6A

30V

-

-

-

No

ROHS3 Compliant

-

TrenchFET®

-

-

950pF @ 15V

21 Weeks

SWITCHING

0.024Ohm

40A

-

-

-

-

-

-

-

SI5461EDC-T1-E3 vs SI5424DC-T1-E3
SI5473DC-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SMD, Flat Lead

8

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

-

-

Obsolete

1 (Unlimited)

-

-

27mOhm

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1.3W Ta

Single

-

-

25 ns

P-Channel

27mOhm @ 5.9A, 4.5V

1V @ 250μA

5.9A Ta

32nC @ 4.5V

50ns

12V

1.8V 4.5V

±8V

90 ns

145 ns

5.9A

8V

-

-12V

1.1mm

3.05mm

1.65mm

-

ROHS3 Compliant

-

TrenchFET®

-

-

-

-

-

-

-

1206-8 ChipFET™

84.99187mg

150°C

-55°C

1

27mOhm

27 mΩ

SI5461EDC-T1-E3 vs SI5473DC-T1-GE3