Vishay Siliconix SI4501ADY-T1-E3
- Part Number:
- SI4501ADY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2474131-SI4501ADY-T1-E3
- Description:
- MOSFET N/P-CH 30V/8V 8SOIC
- Datasheet:
- SI4501ADY-T1-E3
Vishay Siliconix SI4501ADY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4501ADY-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance18mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation1.3W
- Base Part NumberSI4501
- Number of Elements2
- Power Dissipation1.3W
- Turn On Delay Time21 ns
- Power - Max1.3W
- FET TypeN and P-Channel, Common Drain
- Rds On (Max) @ Id, Vgs18mOhm @ 8.8A, 10V
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Current - Continuous Drain (Id) @ 25°C6.3A 4.1A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Rise Time45ns
- Drain to Source Voltage (Vdss)30V 8V
- Fall Time (Typ)45 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)6.3A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage8V
- FET FeatureLogic Level Gate
- Drain to Source Resistance42mOhm
- Rds On Max18 mΩ
- Height1.5494mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4501ADY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4501ADY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4501ADY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4501ADY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4501ADY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4501ADY-T1-E3 More Descriptions
Trans MOSFET N/P-CH 30V/8V 6.3A/4.1A 8-Pin SOIC N T/R
MOSFET, Dual, Complementary, Half-Bridge, 30/-8 V, 5.3/-3.3 A, SO-8 | Siliconix / Vishay SI4501ADY-T1-E3
DUAL N/P CHANNEL MOSFET, 30V, SOIC
COMPLEMENTARY MOSFET (N & P-CHANNEL)
. N&P VDS N 30 P-8V VGS N 20V P-8V ID N 8.8A P-5.7A
MOSFET, Dual, Complementary, Half-Bridge, 30/-8 V, 5.3/-3.3 A, SO-8 | Siliconix / Vishay SI4501ADY-T1-E3
DUAL N/P CHANNEL MOSFET, 30V, SOIC
COMPLEMENTARY MOSFET (N & P-CHANNEL)
. N&P VDS N 30 P-8V VGS N 20V P-8V ID N 8.8A P-5.7A
The three parts on the right have similar specifications to SI4501ADY-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsPower DissipationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeElement ConfigurationInput Capacitance (Ciss) (Max) @ VdsInput CapacitanceContact PlatingWeightTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationNumber of ChannelsOperating ModeTransistor ApplicationPolarity/Channel TypeThreshold VoltageDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinFET TechnologyREACH SVHCLifecycle StatusFactory Lead TimePbfree CodeTerminal FinishSubcategoryVoltage - Rated DCCurrent RatingNominal VgsView Compare
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SI4501ADY-T1-E3Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO-55°C~150°C TJTape & Reel (TR)TrenchFET®2007Obsolete1 (Unlimited)18mOhm150°C-55°C1.3WSI450121.3W21 ns1.3WN and P-Channel, Common Drain18mOhm @ 8.8A, 10V1.8V @ 250μA6.3A 4.1A20nC @ 5V45ns30V 8V45 ns60 ns6.3A8V8VLogic Level Gate42mOhm18 mΩ1.5494mm4.9784mm3.9878mmNoROHS3 CompliantLead Free----------------------------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO-55°C~150°C TJTape & Reel (TR)TrenchFET®2011Obsolete1 (Unlimited)39mOhm150°C-55°C2WSI456522W21 ns3.1WN and P-Channel39mOhm @ 5A, 10V2.2V @ 250μA6.6A 5.6A22nC @ 10V90ns40V56 ns44 ns4.5A16V40VStandard54mOhm39 mΩ----ROHS3 CompliantLead FreeDual625pF @ 20V625pF------------------------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8--55°C~150°C TJTape & Reel (TR)TrenchFET®2011Obsolete1 (Unlimited)25mOhm--2WSI456322W33 ns3.25WN and P-Channel16m Ω @ 5A, 10V2V @ 250μA-85nC @ 10V93ns40V69 ns80 ns8A16V-Standard--1.55mm5mm4mm-ROHS3 CompliantLead Free-2390pF @ 20V-Tin186.993455mgSILICONe38EAR99DUALGULL WING260408Not QualifiedSINGLE WITH BUILT-IN DIODE2ENHANCEMENT MODESWITCHINGN-CHANNEL AND P-CHANNEL2V8A40VMETAL-OXIDE SEMICONDUCTORUnknown--------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8--55°C~150°C TJTape & Reel (TR)-2017Active1 (Unlimited)65MOhm--2WSI4532D22W18 ns900mWN and P-Channel65m Ω @ 3.9A, 10V3V @ 250μA3.9A 3.5A15nC @ 10V8ns-6 ns18 ns3.9A20V30VStandard--1.5mm5mm4mmNoROHS3 CompliantLead Free-235pF @ 10V--230.4mgSILICONe38EAR99DUALGULL WING------ENHANCEMENT MODESWITCHINGN-CHANNEL AND P-CHANNEL3V--METAL-OXIDE SEMICONDUCTORNo SVHCACTIVE (Last Updated: 16 hours ago)8 WeeksyesTin (Sn)Other Transistors30V3.9A3 V
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