SI4501ADY-T1-E3

Vishay Siliconix SI4501ADY-T1-E3

Part Number:
SI4501ADY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2474131-SI4501ADY-T1-E3
Description:
MOSFET N/P-CH 30V/8V 8SOIC
ECAD Model:
Datasheet:
SI4501ADY-T1-E3

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Specifications
Vishay Siliconix SI4501ADY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4501ADY-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Supplier Device Package
    8-SO
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2007
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    18mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    1.3W
  • Base Part Number
    SI4501
  • Number of Elements
    2
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    21 ns
  • Power - Max
    1.3W
  • FET Type
    N and P-Channel, Common Drain
  • Rds On (Max) @ Id, Vgs
    18mOhm @ 8.8A, 10V
  • Vgs(th) (Max) @ Id
    1.8V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    6.3A 4.1A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 5V
  • Rise Time
    45ns
  • Drain to Source Voltage (Vdss)
    30V 8V
  • Fall Time (Typ)
    45 ns
  • Turn-Off Delay Time
    60 ns
  • Continuous Drain Current (ID)
    6.3A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    8V
  • FET Feature
    Logic Level Gate
  • Drain to Source Resistance
    42mOhm
  • Rds On Max
    18 mΩ
  • Height
    1.5494mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4501ADY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4501ADY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4501ADY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4501ADY-T1-E3 More Descriptions
Trans MOSFET N/P-CH 30V/8V 6.3A/4.1A 8-Pin SOIC N T/R
MOSFET, Dual, Complementary, Half-Bridge, 30/-8 V, 5.3/-3.3 A, SO-8 | Siliconix / Vishay SI4501ADY-T1-E3
DUAL N/P CHANNEL MOSFET, 30V, SOIC
COMPLEMENTARY MOSFET (N & P-CHANNEL)
. N&P VDS N 30 P-8V VGS N 20V P-8V ID N 8.8A P-5.7A
Product Comparison
The three parts on the right have similar specifications to SI4501ADY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Feature
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Element Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Input Capacitance
    Contact Plating
    Weight
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Number of Channels
    Operating Mode
    Transistor Application
    Polarity/Channel Type
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    FET Technology
    REACH SVHC
    Lifecycle Status
    Factory Lead Time
    Pbfree Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Current Rating
    Nominal Vgs
    View Compare
  • SI4501ADY-T1-E3
    SI4501ADY-T1-E3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    Obsolete
    1 (Unlimited)
    18mOhm
    150°C
    -55°C
    1.3W
    SI4501
    2
    1.3W
    21 ns
    1.3W
    N and P-Channel, Common Drain
    18mOhm @ 8.8A, 10V
    1.8V @ 250μA
    6.3A 4.1A
    20nC @ 5V
    45ns
    30V 8V
    45 ns
    60 ns
    6.3A
    8V
    8V
    Logic Level Gate
    42mOhm
    18 mΩ
    1.5494mm
    4.9784mm
    3.9878mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4565ADY-T1-E3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    Obsolete
    1 (Unlimited)
    39mOhm
    150°C
    -55°C
    2W
    SI4565
    2
    2W
    21 ns
    3.1W
    N and P-Channel
    39mOhm @ 5A, 10V
    2.2V @ 250μA
    6.6A 5.6A
    22nC @ 10V
    90ns
    40V
    56 ns
    44 ns
    4.5A
    16V
    40V
    Standard
    54mOhm
    39 mΩ
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Dual
    625pF @ 20V
    625pF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4563DY-T1-E3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    Obsolete
    1 (Unlimited)
    25mOhm
    -
    -
    2W
    SI4563
    2
    2W
    33 ns
    3.25W
    N and P-Channel
    16m Ω @ 5A, 10V
    2V @ 250μA
    -
    85nC @ 10V
    93ns
    40V
    69 ns
    80 ns
    8A
    16V
    -
    Standard
    -
    -
    1.55mm
    5mm
    4mm
    -
    ROHS3 Compliant
    Lead Free
    -
    2390pF @ 20V
    -
    Tin
    186.993455mg
    SILICON
    e3
    8
    EAR99
    DUAL
    GULL WING
    260
    40
    8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    2
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    2V
    8A
    40V
    METAL-OXIDE SEMICONDUCTOR
    Unknown
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4532DY
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    Active
    1 (Unlimited)
    65MOhm
    -
    -
    2W
    SI4532D
    2
    2W
    18 ns
    900mW
    N and P-Channel
    65m Ω @ 3.9A, 10V
    3V @ 250μA
    3.9A 3.5A
    15nC @ 10V
    8ns
    -
    6 ns
    18 ns
    3.9A
    20V
    30V
    Standard
    -
    -
    1.5mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    235pF @ 10V
    -
    -
    230.4mg
    SILICON
    e3
    8
    EAR99
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    3V
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    No SVHC
    ACTIVE (Last Updated: 16 hours ago)
    8 Weeks
    yes
    Tin (Sn)
    Other Transistors
    30V
    3.9A
    3 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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