PMBFJ309,215

NXP USA Inc. PMBFJ309,215

Part Number:
PMBFJ309,215
Manufacturer:
NXP USA Inc.
Ventron No:
2495715-PMBFJ309,215
Description:
JFET N-CH 25V 250MW SOT23
ECAD Model:
Datasheet:
PMBFJ309,215

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Specifications
NXP USA Inc. PMBFJ309,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ309,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW NOISE
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    MBFJ309
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    AMPLIFIER
  • Input Capacitance (Ciss) (Max) @ Vds
    5pF @ 10V
  • JEDEC-95 Code
    TO-236AB
  • DS Breakdown Voltage-Min
    25V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.25W
  • Feedback Cap-Max (Crss)
    2.5 pF
  • Highest Frequency Band
    VERY HIGH FREQUENCY B
  • Current - Drain (Idss) @ Vds (Vgs=0)
    12mA @ 10V
  • Voltage - Cutoff (VGS off) @ Id
    1V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    25V
  • Resistance - RDS(On)
    50Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ309,215 Description
The NXP PMBFJ309,215 is a Symmetrical N-channel silicon junction field-effect transistor in a SOT23 package.

PMBFJ309,215 Features
Low noise
Interchangeability of drain and source connections
High gain

PMBFJ309,215 Applications
AM input stage in car radios
VHF amplifiers
Oscillators and mixers
PMBFJ309,215 More Descriptions
PMBFJ309 Series 25 Vds 50 mA N-Ch silicon field-effect Transistors - SOT-23
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
TRANSISTOR, JFET, N-CH, -25V, SOT-23; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 30mA; Power Dissipation Pd: 250mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Breakdown Voltage Vbr: -25V; Gate-Source Cutoff Voltage Vgs(off) Max: -4V; No. of Pins: 3 Pin; Transistor Case Style: SOT-23; Transistor Type: JFET; Zero Gate Voltage Drain Current Idss Max: 30mA; Zero Gate Voltage Drain Current Idss Min: 12mA
Product Comparison
The three parts on the right have similar specifications to PMBFJ309,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Highest Frequency Band
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    ECCN Code
    Drain-source On Resistance-Max
    View Compare
  • PMBFJ309,215
    PMBFJ309,215
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Not For New Designs
    1 (Unlimited)
    3
    Tin (Sn)
    LOW NOISE
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    MBFJ309
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    25V
    JUNCTION
    0.25W
    2.5 pF
    VERY HIGH FREQUENCY B
    12mA @ 10V
    1V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    -
    -
    -
  • PMBFJ113,215
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ113
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    40V
    JUNCTION
    0.3W
    -
    -
    2mA @ 15V
    3V @ 1μA
    40V
    100Ohm
    ROHS3 Compliant
    EAR99
    100Ohm
  • PMBFJ111,215
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    -
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ111
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    40V
    JUNCTION
    0.3W
    -
    -
    20mA @ 15V
    10V @ 1μA
    40V
    30Ohm
    ROHS3 Compliant
    EAR99
    30Ohm
  • PMBFJ310,215
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    LOW NOISE
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ310
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    25V
    JUNCTION
    0.25W
    2.5 pF
    VERY HIGH FREQUENCY B
    24mA @ 10V
    2V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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