NXP USA Inc. PMBFJ309,215
- Part Number:
- PMBFJ309,215
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2495715-PMBFJ309,215
- Description:
- JFET N-CH 25V 250MW SOT23
- Datasheet:
- PMBFJ309,215
NXP USA Inc. PMBFJ309,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ309,215.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Additional FeatureLOW NOISE
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMBFJ309
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeDEPLETION MODE
- Power - Max250mW
- FET TypeN-Channel
- Transistor ApplicationAMPLIFIER
- Input Capacitance (Ciss) (Max) @ Vds5pF @ 10V
- JEDEC-95 CodeTO-236AB
- DS Breakdown Voltage-Min25V
- FET TechnologyJUNCTION
- Power Dissipation-Max (Abs)0.25W
- Feedback Cap-Max (Crss)2.5 pF
- Highest Frequency BandVERY HIGH FREQUENCY B
- Current - Drain (Idss) @ Vds (Vgs=0)12mA @ 10V
- Voltage - Cutoff (VGS off) @ Id1V @ 1μA
- Voltage - Breakdown (V(BR)GSS)25V
- Resistance - RDS(On)50Ohm
- RoHS StatusROHS3 Compliant
PMBFJ309,215 Description
The NXP PMBFJ309,215 is a Symmetrical N-channel silicon junction field-effect transistor in a SOT23 package.
PMBFJ309,215 Features
Low noise
Interchangeability of drain and source connections
High gain
PMBFJ309,215 Applications
AM input stage in car radios
VHF amplifiers
Oscillators and mixers
The NXP PMBFJ309,215 is a Symmetrical N-channel silicon junction field-effect transistor in a SOT23 package.
PMBFJ309,215 Features
Low noise
Interchangeability of drain and source connections
High gain
PMBFJ309,215 Applications
AM input stage in car radios
VHF amplifiers
Oscillators and mixers
PMBFJ309,215 More Descriptions
PMBFJ309 Series 25 Vds 50 mA N-Ch silicon field-effect Transistors - SOT-23
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
TRANSISTOR, JFET, N-CH, -25V, SOT-23; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 30mA; Power Dissipation Pd: 250mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Breakdown Voltage Vbr: -25V; Gate-Source Cutoff Voltage Vgs(off) Max: -4V; No. of Pins: 3 Pin; Transistor Case Style: SOT-23; Transistor Type: JFET; Zero Gate Voltage Drain Current Idss Max: 30mA; Zero Gate Voltage Drain Current Idss Min: 12mA
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
TRANSISTOR, JFET, N-CH, -25V, SOT-23; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 30mA; Power Dissipation Pd: 250mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Breakdown Voltage Vbr: -25V; Gate-Source Cutoff Voltage Vgs(off) Max: -4V; No. of Pins: 3 Pin; Transistor Case Style: SOT-23; Transistor Type: JFET; Zero Gate Voltage Drain Current Idss Max: 30mA; Zero Gate Voltage Drain Current Idss Min: 12mA
The three parts on the right have similar specifications to PMBFJ309,215.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsJEDEC-95 CodeDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)Feedback Cap-Max (Crss)Highest Frequency BandCurrent - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdVoltage - Breakdown (V(BR)GSS)Resistance - RDS(On)RoHS StatusECCN CodeDrain-source On Resistance-MaxView Compare
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PMBFJ309,2158 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Not For New Designs1 (Unlimited)3Tin (Sn)LOW NOISE8541.21.00.75Other TransistorsDUALGULL WING260NOT SPECIFIEDMBFJ3093R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE250mWN-ChannelAMPLIFIER5pF @ 10VTO-236AB25VJUNCTION0.25W2.5 pFVERY HIGH FREQUENCY B12mA @ 10V1V @ 1μA25V50OhmROHS3 Compliant---
-
-Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)1997e3Obsolete1 (Unlimited)3Tin (Sn)-8541.21.00.95Other TransistorsDUALGULL WING26040MBFJ1133R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWN-ChannelSWITCHING6pF @ 10V VGSTO-236AB40VJUNCTION0.3W--2mA @ 15V3V @ 1μA40V100OhmROHS3 CompliantEAR99100Ohm
-
-Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3Tin (Sn)-8541.21.00.95Other TransistorsDUALGULL WING26040MBFJ1113R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE300mWN-ChannelSWITCHING6pF @ 10V VGSTO-236AB40VJUNCTION0.3W--20mA @ 15V10V @ 1μA40V30OhmROHS3 CompliantEAR9930Ohm
-
-Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)3Tin (Sn)LOW NOISE8541.21.00.75Other TransistorsDUALGULL WING26040MBFJ3103R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE250mWN-ChannelAMPLIFIER5pF @ 10VTO-236AB25VJUNCTION0.25W2.5 pFVERY HIGH FREQUENCY B24mA @ 10V2V @ 1μA25V50OhmROHS3 Compliant--
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