Home > Products > Discrete Semiconductor Products > Transistors - JFETs > PMBFJ108,215
PMBFJ108,215

NXP USA Inc. PMBFJ108,215

Part Number:
PMBFJ108,215
Manufacturer:
NXP USA Inc.
Ventron No:
2495785-PMBFJ108,215
Description:
JFET N-CH 25V 250MW SOT23
ECAD Model:
Datasheet:
PMBFJ108.109,110

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
NXP USA Inc. PMBFJ108,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ108,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBFJ108
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    30pF @ 10V VGS
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    8Ohm
  • DS Breakdown Voltage-Min
    25V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.25W
  • Feedback Cap-Max (Crss)
    15 pF
  • Current - Drain (Idss) @ Vds (Vgs=0)
    80mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    10V @ 1μA
  • Voltage - Breakdown (V(BR)GSS)
    25V
  • Resistance - RDS(On)
    8Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ108,215          Description
Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.   PMBFJ108,215                   Features  
· Dual-Outputs by Single-Inductor architecture · VOUT1 default output voltage ( 5.0V/ 5.5V) · VOUT2 default output voltage (–5.0V/ –5.5V) · Adjustable both output voltages by I2 C (I2 C disable at standby) · Operating voltage range 2.5V to 5.5V · High speed inverted charge pump technology · Short Circuit Protection · Standby current dissipation 0.3m   PMBFJ108,215                       Applications
· Mobile LCD panel power supply · General around ±5.0V applications  
PMBFJ108,215 More Descriptions
PMBFJ108 Series Single N Channel 25 V 8 Ohm Surface Mount JFET - SOT-23
Transistor JFET N-CH 25V 3-Pin TO-236AB T/R
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
PMBFJ108,215,TAPE7 FET-RFSS, SOT23, R77 STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
RF SMALL SIGNAL TRANSISTOR MOSFET
JET, N CH, 25V, SOT-23; Breakdown Voltage Vbr: -25V; Zero Gate Voltage Drain Current Idss Min: -; Zero Gate Voltage Drain Current Idss Max: 80mA; Gate-Source Cutoff Voltage Vgs(off) Max: -3V; Transistor Case Style: SOT-23; Transistor Type: -; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Idss Min: 80mA; No. of Pins: 3Pins; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Pd: 250mW; Termination Type: Surface Mount Device; Transistor Polarity: N Channel
Product Comparison
The three parts on the right have similar specifications to PMBFJ108,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    Additional Feature
    Highest Frequency Band
    View Compare
  • PMBFJ108,215
    PMBFJ108,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ108
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    30pF @ 10V VGS
    TO-236AB
    8Ohm
    25V
    JUNCTION
    0.25W
    15 pF
    80mA @ 15V
    10V @ 1μA
    25V
    8Ohm
    ROHS3 Compliant
    -
    -
    -
  • PMBFJ111,215
    PMBFJ111,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ111
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    30Ohm
    40V
    JUNCTION
    0.3W
    -
    20mA @ 15V
    10V @ 1μA
    40V
    30Ohm
    ROHS3 Compliant
    -
    -
    PMBFJ108,215 vs PMBFJ111,215
  • PMBFJ112,215
    PMBFJ112,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ112
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    TO-236AB
    50Ohm
    40V
    JUNCTION
    0.3W
    -
    5mA @ 15V
    5V @ 1μA
    40V
    50Ohm
    ROHS3 Compliant
    -
    -
    PMBFJ108,215 vs PMBFJ112,215
  • PMBFJ310,215
    PMBFJ310,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    Tin (Sn)
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ310
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    TO-236AB
    -
    25V
    JUNCTION
    0.25W
    2.5 pF
    24mA @ 10V
    2V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    LOW NOISE
    VERY HIGH FREQUENCY B
    PMBFJ108,215 vs PMBFJ310,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for PMBFJ108,215
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.