Nexperia USA Inc. PBSS5320T,215
- Part Number:
- PBSS5320T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2846098-PBSS5320T,215
- Description:
- TRANS PNP 20V 2A SOT23
- Datasheet:
- PBSS5320T,215
Nexperia USA Inc. PBSS5320T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5320T,215.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation1.2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPBSS5320
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.2W
- Power - Max540mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage20V
- Transition Frequency100MHz
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS5320T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5320T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5320T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5320T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5320T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5320T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5320T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS5320T,215 More Descriptions
PBSS5320T Series 20 V 2 A 1.2 W SMT PNP Small Signal Transistor - SOT-23
Trans GP BJT PNP 20V 2A 1200mW Automotive 3-Pin SOT-23 T/R
PBSS5320T - 20 V, 3 A PNP low VCEsat transistor
20V 1.2W 2A 100@3A,2V 100MHz 300mV@3A,300mA PNP 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:-2A; DC Current Gain Max (hfe):220 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 2A; DC Current Gain hFE: 220hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 70V; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; SMD Marking: ZH; Voltage Vcbo: 20V
Trans GP BJT PNP 20V 2A 1200mW Automotive 3-Pin SOT-23 T/R
PBSS5320T - 20 V, 3 A PNP low VCEsat transistor
20V 1.2W 2A 100@3A,2V 100MHz 300mV@3A,300mA PNP 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:-2A; DC Current Gain Max (hfe):220 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 2A; DC Current Gain hFE: 220hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 70V; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; SMD Marking: ZH; Voltage Vcbo: 20V
The three parts on the right have similar specifications to PBSS5320T,215.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusLead FreeTerminal FinishCase ConnectionCurrent - Collector (Ic) (Max)REACH SVHCJESD-30 CodeTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
-
PBSS5320T,2154 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2003e3Active1 (Unlimited)3EAR991.2WDUALGULL WING260100MHz40PBSS532031Single1.2W540mWSWITCHING100MHzPNPPNP20V2A200 @ 1A 2V100nA ICBO300mV @ 300mA, 3A20V100MHz20V20V5VNoROHS3 CompliantLead Free--------
-
8 Weeks-Surface MountSurface MountSC-101, SOT-8833SILICON150°C TJTape & Reel (TR)2002e3Active1 (Unlimited)3EAR99430mWBOTTOM--300MHz-PBSS354031Single430mW-SWITCHING300MHzPNPPNP40V500mA150 @ 100mA 2V100nA ICBO350mV @ 50mA, 500mA40V300MHz40V40V6VNoROHS3 CompliantLead FreeTin (Sn)COLLECTOR-----
-
4 Weeks-Surface MountSurface MountSC-74, SOT-4576SILICON150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)6EAR992.5WDUALGULL WING260140MHz30PBSS303N61Single2.5W1.1WSWITCHING140MHzNPNNPN60V3A345 @ 500mA 2V100nA515mV @ 600mA, 6A60V140MHz60V60V5VNoROHS3 CompliantLead FreeTin (Sn)-1ANo SVHC---
-
4 Weeks-Surface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR992.1W-FLAT---PBSS303P31Single-2.1WSWITCHING130MHzPNPPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V130MHz30V30V5VNoROHS3 CompliantLead FreeTin (Sn)COLLECTOR--R-PSSO-F3320ns70ns
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
24 April 2024
MBRS340T3G Schottky Diode: Specifications, Highlights, Structure and Features
Ⅰ. Overview of MBRS340T3GⅡ. Geometric structure of MBRS340T3GⅢ. Specifications of MBRS340T3GⅣ. Highlights of MBRS340T3GⅤ. MBRS340T3G typical electrical characteristicsⅥ. Features of MBRS340T3GⅦ. How to use and install MBRS340T3G correctly?Ⅰ.... -
24 April 2024
MC34063 Regulator Pinout, Working Principle and Advantages
Ⅰ. What is MC34063?Ⅱ. Pin diagram and functions of MC34063Ⅲ. How does MC34063 work?Ⅳ. MC34063 boost circuit calculation methodⅤ. MC34063 step-down switching circuitⅥ. Voltage reverse circuit composed of... -
25 April 2024
STM32F407ZET6 Microcontroller: Characteristics, Highlights and STM32F407ZET6 vs STM32F407VET6
Ⅰ. Description of STM32F103ZET6Ⅱ. Naming rules of STM32F103ZET6Ⅲ. What are the characteristics of STM32F103ZET6?Ⅳ. How to optimize the program performance of STM32F103ZET6?Ⅴ. Highlights of STM32F103ZET6Ⅵ. Minimum system of... -
25 April 2024
What is W5300 Embedded Ethernet Controller?
Ⅰ. W5300 descriptionⅡ. W5300 module function descriptionⅢ. Block diagram of W5300Ⅳ. W5300 register initialization configurationⅤ. Application areas of W5300Ⅵ. How is the network protocol stack of W5300 implemented?Ⅶ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.