PBSS5320T,215

Nexperia USA Inc. PBSS5320T,215

Part Number:
PBSS5320T,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
2846098-PBSS5320T,215
Description:
TRANS PNP 20V 2A SOT23
ECAD Model:
Datasheet:
PBSS5320T,215

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Specifications
Nexperia USA Inc. PBSS5320T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5320T,215.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    1.2W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    PBSS5320
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.2W
  • Power - Max
    540mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 1A 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 300mA, 3A
  • Collector Emitter Breakdown Voltage
    20V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    20V
  • Collector Base Voltage (VCBO)
    20V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PBSS5320T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

PBSS5320T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


PBSS5320T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5320T,215 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
PBSS5320T,215 More Descriptions
PBSS5320T Series 20 V 2 A 1.2 W SMT PNP Small Signal Transistor - SOT-23
Trans GP BJT PNP 20V 2A 1200mW Automotive 3-Pin SOT-23 T/R
PBSS5320T - 20 V, 3 A PNP low VCEsat transistor
20V 1.2W 2A 100@3A,2V 100MHz 300mV@3A,300mA PNP 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:-2A; DC Current Gain Max (hfe):220 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 2A; DC Current Gain hFE: 220hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 70V; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; SMD Marking: ZH; Voltage Vcbo: 20V
Product Comparison
The three parts on the right have similar specifications to PBSS5320T,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Case Connection
    Current - Collector (Ic) (Max)
    REACH SVHC
    JESD-30 Code
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • PBSS5320T,215
    PBSS5320T,215
    4 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2003
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    1.2W
    DUAL
    GULL WING
    260
    100MHz
    40
    PBSS5320
    3
    1
    Single
    1.2W
    540mW
    SWITCHING
    100MHz
    PNP
    PNP
    20V
    2A
    200 @ 1A 2V
    100nA ICBO
    300mV @ 300mA, 3A
    20V
    100MHz
    20V
    20V
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • PBSS3540M,315
    8 Weeks
    -
    Surface Mount
    Surface Mount
    SC-101, SOT-883
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2002
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    430mW
    BOTTOM
    -
    -
    300MHz
    -
    PBSS3540
    3
    1
    Single
    430mW
    -
    SWITCHING
    300MHz
    PNP
    PNP
    40V
    500mA
    150 @ 100mA 2V
    100nA ICBO
    350mV @ 50mA, 500mA
    40V
    300MHz
    40V
    40V
    6V
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    COLLECTOR
    -
    -
    -
    -
    -
  • PBSS303ND,115
    4 Weeks
    -
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    6
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2007
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    2.5W
    DUAL
    GULL WING
    260
    140MHz
    30
    PBSS303N
    6
    1
    Single
    2.5W
    1.1W
    SWITCHING
    140MHz
    NPN
    NPN
    60V
    3A
    345 @ 500mA 2V
    100nA
    515mV @ 600mA, 6A
    60V
    140MHz
    60V
    60V
    5V
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    1A
    No SVHC
    -
    -
    -
  • PBSS303PX,115
    4 Weeks
    -
    Surface Mount
    Surface Mount
    TO-243AA
    4
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    2.1W
    -
    FLAT
    -
    -
    -
    PBSS303P
    3
    1
    Single
    -
    2.1W
    SWITCHING
    130MHz
    PNP
    PNP
    30V
    5.1A
    200 @ 2A 2V
    100nA ICBO
    230mV @ 255mA, 5.1A
    30V
    130MHz
    30V
    30V
    5V
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    COLLECTOR
    -
    -
    R-PSSO-F3
    320ns
    70ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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