Nexperia USA Inc. PBSS5220T,215
- Part Number:
- PBSS5220T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465311-PBSS5220T,215
- Description:
- TRANS PNP 20V 2A SOT23
- Datasheet:
- PBSS5220T,215
Nexperia USA Inc. PBSS5220T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5220T,215.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation480mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPBSS5220
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation480mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic225mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage20V
- Transition Frequency100MHz
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)5V
- hFE Min225
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS5220T,215 More Descriptions
PBSS5220T Series 20 V 2 A 480 mW PNP SMT Small Signal Transistor - SOT-23
PBSS5220T - 20 V, 2 A PNP low VCEsat transistor
20V 480mW 2A 150@2A,2V 100MHz 225mV@2A,200mA PNP 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 20V 2A Automotive 3-Pin TO-236AB T/R
Bipolar Transistor; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:-2A; DC Current Gain Max (hfe):225 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 2A; DC Current Gain hFE: 225hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 80V; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 2A; Current Ic hFE: 2mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 150; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: -20V
PBSS5220T - 20 V, 2 A PNP low VCEsat transistor
20V 480mW 2A 150@2A,2V 100MHz 225mV@2A,200mA PNP 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 20V 2A Automotive 3-Pin TO-236AB T/R
Bipolar Transistor; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:-2A; DC Current Gain Max (hfe):225 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 2A; DC Current Gain hFE: 225hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 80V; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 2A; Current Ic hFE: 2mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 150; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: -20V
The three parts on the right have similar specifications to PBSS5220T,215.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeTerminal FinishPower - MaxCurrent - Collector (Ic) (Max)REACH SVHCTerminationCase ConnectionJESD-30 CodeTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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PBSS5220T,2154 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-334.535924gSILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99480mWDUALGULL WING260100MHz40PBSS522031Single480mWSWITCHING100MHzPNPPNP20V2A200 @ 1A 2V100nA ICBO225mV @ 200mA, 2A20V100MHz20V20V5V2256.35mm6.35mm6.35mmNoROHS3 CompliantLead Free----------
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4 Weeks-Surface MountSurface MountSC-74, SOT-4576-SILICON150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)6EAR992.5WDUALGULL WING260140MHz30PBSS303N61Single2.5WSWITCHING140MHzNPNNPN60V3A345 @ 500mA 2V100nA515mV @ 600mA, 6A60V140MHz60V60V5V----NoROHS3 CompliantLead FreeTin (Sn)1.1W1ANo SVHC-----
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4 Weeks-Surface MountSurface MountTO-261-4, TO-261AA44.535924gSILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4EAR992WDUALGULL WING-110MHz-PBSS306N41Single700mWSWITCHING110MHzNPNNPN100V5.1A100 @ 2A 2V100nA ICBO300mV @ 255mA, 5.1A100V110MHz100V100V5V2006.35mm6.35mm6.35mmNoROHS3 CompliantLead FreeTin (Sn)2W-No SVHCSMD/SMTCOLLECTOR---
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4 Weeks-Surface MountSurface MountTO-243AA4-SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR992.1W-FLAT---PBSS303P31Single-SWITCHING130MHzPNPPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V130MHz30V30V5V----NoROHS3 CompliantLead FreeTin (Sn)2.1W---COLLECTORR-PSSO-F3320ns70ns
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