ON Semiconductor NVTR0202PLT1G
- Part Number:
- NVTR0202PLT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2850195-NVTR0202PLT1G
- Description:
- MOSFET P-CH 20V 0.4A SOT23
- Datasheet:
- NVTR0202PLT1G
ON Semiconductor NVTR0202PLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVTR0202PLT1G.
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Power Dissipation-Max225mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation225mW
- Turn On Delay Time3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs800m Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds70pF @ 5V
- Current - Continuous Drain (Id) @ 25°C400mA Ta
- Gate Charge (Qg) (Max) @ Vgs2.18nC @ 10V
- Rise Time6ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)400mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.4A
- Drain-source On Resistance-Max0.8Ohm
- Drain to Source Breakdown Voltage-20V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVTR0202PLT1G Overview
The maximum input capacitance of this device is 70pF @ 5V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 0.4A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NVTR0202PLT1G Features
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
NVTR0202PLT1G Applications
There are a lot of ON Semiconductor
NVTR0202PLT1G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 70pF @ 5V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 0.4A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NVTR0202PLT1G Features
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
NVTR0202PLT1G Applications
There are a lot of ON Semiconductor
NVTR0202PLT1G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NVTR0202PLT1G More Descriptions
Trans MOSFET P-CH 20V 0.4A Automotive 3-Pin SOT-23 T/R
Single P-Channel Power MOSFET -20V, -400mA, 800mΩ Small Signal MOSFET -20V -400mA 800 mOhm Single P-Channel SOT-23 Logic Level
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Aluminum Electrolytic Capacitors 1200μF Radial, Can - Snap-In ±20% Bulk MXH 2.441 62.00mm Through Hole General Purpose 2.95A CAP ALUM 1200UF 20% 400V SNAP
Single P-Channel Power MOSFET -20V, -400mA, 800mΩ Small Signal MOSFET -20V -400mA 800 mOhm Single P-Channel SOT-23 Logic Level
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Aluminum Electrolytic Capacitors 1200μF Radial, Can - Snap-In ±20% Bulk MXH 2.441 62.00mm Through Hole General Purpose 2.95A CAP ALUM 1200UF 20% 400V SNAP
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