ON Semiconductor NVTR01P02LT1G
- Part Number:
- NVTR01P02LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2481803-NVTR01P02LT1G
- Description:
- MOSFET P-CH 20V 1.3A SOT23
- ECAD Model:
-
- Datasheet:
- NVTR01P02LT1G
ON Semiconductor NVTR01P02LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVTR01P02LT1G.
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Power Dissipation-Max400mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation400mW
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs220m Ω @ 750mA, 4.5V
- Vgs(th) (Max) @ Id1.25V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds225pF @ 5V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
- Gate Charge (Qg) (Max) @ Vgs3.1nC @ 4V
- Rise Time15ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)1.3A
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.22Ohm
- DS Breakdown Voltage-Min20V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVTR01P02LT1G Description
NVTR01P02LT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor optimized for low RDS (on) to minimize power loss and conserve energy, which makes it well suited for space-sensitive power management circuitry. Its low RDS (on) can also provide higher efficiency and extend battery life. Its SOT-23 surface-mount package is used to save board space.
NVTR01P02LT1G Features
Low RDS (on)
Low power loss
High efficiency
Extended battery life
Available in the SOT-23 surface-mount package
NVTR01P02LT1G Applications
Printers
Computers
PCMCIA cards
DC?DC converters
Cellular and cordless telephones
NVTR01P02LT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor optimized for low RDS (on) to minimize power loss and conserve energy, which makes it well suited for space-sensitive power management circuitry. Its low RDS (on) can also provide higher efficiency and extend battery life. Its SOT-23 surface-mount package is used to save board space.
NVTR01P02LT1G Features
Low RDS (on)
Low power loss
High efficiency
Extended battery life
Available in the SOT-23 surface-mount package
NVTR01P02LT1G Applications
Printers
Computers
PCMCIA cards
DC?DC converters
Cellular and cordless telephones
NVTR01P02LT1G More Descriptions
P-Channel 20 V 220 mO 3.1 nC Surface Mount Power Mosfet - SOT-23
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R - Tape and Reel
Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ Small Signal MOSFET -20V -1.3A 220 mOhm Single P-Channel SOT-23 Logic Level
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, AEC-Q101, P-CH, -20V, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R - Tape and Reel
Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ Small Signal MOSFET -20V -1.3A 220 mOhm Single P-Channel SOT-23 Logic Level
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, AEC-Q101, P-CH, -20V, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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