ON Semiconductor NTHD4P02FT1G

NTHD4P02FT1G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 300pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.2A.With a drain-source breakdown voltage of -20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.Peak drain current for this device is 9A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.

NTHD4P02FT1G Features
a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 9A.
a 20V drain to source voltage (Vdss)


NTHD4P02FT1G Applications
There are a lot of ON Semiconductor
NTHD4P02FT1G applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification