ON Semiconductor NTD4979NT4G

Name: NTD4979NT4G
Brand: ON Semiconductor
SKU: 3586709-NTD4979NT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4979NT4G

Manufacturer:: ON Semiconductor

Ventron No:: 3586709-NTD4979NT4G

Description:: MOSFET N-CH 30V 9.4A DPAK-3

ECAD Model:

Datasheet:: NTD4979N

Specifications

ON Semiconductor NTD4979NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4979NT4G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Supplier Device Package
DPAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.38W Ta 26.3W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
837pF @ 15V
Current - Continuous Drain (Id) @ 25°C
9.4A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs
16.5nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

NTD4979NT4G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 837pF @ 15V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NTD4979NT4G Features
a 30V drain to source voltage (Vdss)

NTD4979NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4979NT4G applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

NTD4979NT4G More Descriptions

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.4A Ta 41A Tc 41A 2.56W 30V
Trans MOSFET N-CH 30V 12.7A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 9.4A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 41A, TO-252;

Product Comparison

The three parts on the right have similar specifications to NTD4979NT4G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lifecycle Status

Surface Mount

Number of Pins

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Transistor Application

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Lead Free

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain-source On Resistance-Max

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Reach Compliance Code

Current Rating

Turn-Off Delay Time

Drain to Source Breakdown Voltage

View Compare
NTD4979NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

DPAK

-55°C~175°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.38W Ta 26.3W Tc

N-Channel

9mOhm @ 30A, 10V

2.5V @ 250μA

837pF @ 15V

9.4A Ta 41A Tc

16.5nC @ 10V

30V

4.5V 10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4863NA-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.27W Ta 36.6W Tc

N-Channel

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

25V

-

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

NO

3

SILICON

2010

e3

yes

3

EAR99

Tin (Sn)

3

1

Single

ENHANCEMENT MODE

1.95W

DRAIN

SWITCHING

11.3mA

20V

9.2A

98A

25V

60.5 mJ

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4979NT4G vs NTD4863NA-35G
NTD4855N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.35W Ta 66.7W Tc

N-Channel

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

25V

4.5V 10V

±20V

ROHS3 Compliant

-

NO

-

SILICON

-

e3

yes

3

-

TIN

3

1

-

ENHANCEMENT MODE

-

DRAIN

SWITCHING

-

-

14A

197A

25V

220 mJ

-

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

0.006Ohm

-

-

-

-

-

-

-

-

NTD4979NT4G vs NTD4855N-35G
NTD4302

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.04W Ta 75W Tc

N-Channel

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

Non-RoHS Compliant

OBSOLETE (Last Updated: 1 week ago)

YES

4

SILICON

2005

e0

yes

2

EAR99

Tin/Lead (Sn80Pb20)

4

1

Single

ENHANCEMENT MODE

75W

DRAIN

SWITCHING

68A

20V

-

28A

-

722 mJ

Lead Free

-

235

NOT SPECIFIED

R-PSSO-G2

Not Qualified

-

0.01Ohm

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

GULL WING

not_compliant

68A

40 ns

30V

NTD4979NT4G vs NTD4302