ON Semiconductor NTD4959NH-35G

Name: NTD4959NH-35G
Brand: ON Semiconductor
SKU: 2491098-NTD4959NH-35G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4959NH-35G

Manufacturer:: ON Semiconductor

Ventron No:: 2491098-NTD4959NH-35G

Description:: MOSFET N-CH 30V 9A IPAK

ECAD Model:

Datasheet:: NTD4959NH

Specifications

ON Semiconductor NTD4959NH-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4959NH-35G.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.3W Ta 52W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2155pF @ 12V
Current - Continuous Drain (Id) @ 25°C
9A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 11.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Continuous Drain Current (ID)
58A
Drain Current-Max (Abs) (ID)
9A
Drain-source On Resistance-Max
0.0125Ohm
Avalanche Energy Rating (Eas)
112.5 mJ
RoHS Status
RoHS Compliant

Description

NTD4959NH-35G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 112.5 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2155pF @ 12V.This device conducts a continuous drain current (ID) of 58A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 9A.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 11.5V volts (4.5V 11.5V).

NTD4959NH-35G Features
the avalanche energy rating (Eas) is 112.5 mJ
a continuous drain current (ID) of 58A
a 30V drain to source voltage (Vdss)

NTD4959NH-35G Applications
There are a lot of ON Semiconductor
NTD4959NH-35G applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

NTD4959NH-35G More Descriptions

Power Field-Effect Transistor, 9A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 9A/58A IPAK
RES SMD 750 OHM 1% 1/4W 1206

Product Comparison

The three parts on the right have similar specifications to NTD4959NH-35G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Surface Mount

Pbfree Code

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Reach Compliance Code

Current Rating

JESD-30 Code

Element Configuration

Power Dissipation

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Lead Free

Factory Lead Time

Rise Time

Fall Time (Typ)

Radiation Hardening

View Compare
NTD4959NH-35G

ON Semiconductor

Through Hole

Through Hole

TO-251-3 Stub Leads, IPak

3

SILICON

-55°C~175°C TJ

Tube

2009

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

1.3W Ta 52W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9m Ω @ 30A, 10V

2.5V @ 250μA

2155pF @ 12V

9A Ta 58A Tc

44nC @ 11.5V

30V

4.5V 11.5V

±20V

58A

9A

0.0125Ohm

112.5 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4302

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

4

SILICON

-55°C~150°C TJ

Tube

2005

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn80Pb20)

MOSFET (Metal Oxide)

-

235

NOT SPECIFIED

4

Not Qualified

1

-

1.04W Ta 75W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

68A

-

0.01Ohm

722 mJ

Non-RoHS Compliant

OBSOLETE (Last Updated: 1 week ago)

YES

yes

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

GULL WING

not_compliant

68A

R-PSSO-G2

Single

75W

40 ns

20V

30V

28A

Lead Free

-

-

-

-

NTD4959NH-35G vs NTD4302
NTD4858N-35G

ON Semiconductor

-

Through Hole

TO-251-3 Stub Leads, IPak

3

SILICON

-55°C~175°C TJ

Tube

2007

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

3

-

1

-

1.3W Ta 54.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.2m Ω @ 30A, 10V

2.5V @ 250μA

1563pF @ 12V

11.2A Ta 73A Tc

19.2nC @ 4.5V

-

4.5V 10V

±20V

13.6A

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

NO

yes

-

FET General Purpose Power

-

-

-

-

-

Single

2W

23.8 ns

20V

25V

-

Lead Free

4 Weeks

17.3ns

2.8 ns

No

NTD4959NH-35G vs NTD4858N-35G
NTD4959N-35G

ON Semiconductor

Through Hole

Through Hole

TO-251-3 Stub Leads, IPak

3

-

-55°C~175°C TJ

Tube

2009

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

1.3W Ta 52W Tc

-

-

N-Channel

-

9m Ω @ 30A, 10V

2.5V @ 250μA

1456pF @ 12V

9A Ta 58A Tc

25nC @ 11.5V

30V

4.5V 11.5V

±20V

58A

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4959NH-35G vs NTD4959N-35G