ON Semiconductor NTD4863NT4G

Name: NTD4863NT4G
Brand: ON Semiconductor
SKU: 2490964-NTD4863NT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4863NT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2490964-NTD4863NT4G

Description:: MOSFET N-CH 25V 9.2A DPAK

ECAD Model:

Datasheet:: NTD4863NT4G

Specifications

ON Semiconductor NTD4863NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4863NT4G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.27W Ta 36.6W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
990pF @ 12V
Current - Continuous Drain (Id) @ 25°C
9.2A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
13.5nC @ 4.5V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
9.2A
Drain-source On Resistance-Max
0.014Ohm
Pulsed Drain Current-Max (IDM)
98A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
60.5 mJ
RoHS Status
ROHS3 Compliant

Description

NTD4863NT4G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 60.5 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 990pF @ 12V.9.2A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 98A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NTD4863NT4G Features
the avalanche energy rating (Eas) is 60.5 mJ
based on its rated peak drain current 98A.
a 25V drain to source voltage (Vdss)

NTD4863NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4863NT4G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

NTD4863NT4G More Descriptions

NTD4863NT4G N-channel MOSFET Transistor, 49 A, 25 V, 3-Pin DPAK | ON Semiconductor NTD4863NT4G
Trans MOSFET N-CH 25V 11.3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Power MOSFET 25V 49A 9.3 mOhm Single N-Channel DPAK
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.2A Ta 49A Tc 11.3A 1.95W 16.5ns
Power Field-Effect Transistor, 9.2A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to NTD4863NT4G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Lifecycle Status

Number of Pins

Published

ECCN Code

Element Configuration

Power Dissipation

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Lead Free

Factory Lead Time

Subcategory

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Drain to Source Breakdown Voltage

Radiation Hardening

View Compare
NTD4863NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.27W Ta 36.6W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

13.5nC @ 4.5V

25V

4.5V 10V

±20V

9.2A

0.014Ohm

98A

25V

60.5 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4804N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

1.43W Ta 107W Tc

-

-

N-Channel

-

4mOhm @ 30A, 10V

2.5V @ 250μA

4.49pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4863NT4G vs NTD4804N-1G
NTD4863NA-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

3

-

-

1

-

1.27W Ta 36.6W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

25V

-

-

9.2A

-

98A

25V

60.5 mJ

RoHS Compliant

-

LAST SHIPMENTS (Last Updated: 1 week ago)

3

2010

EAR99

Single

1.95W

11.3mA

20V

Lead Free

-

-

-

-

-

-

-

NTD4863NT4G vs NTD4863NA-35G
NTD4858N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

3

-

-

1

-

1.3W Ta 54.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.2m Ω @ 30A, 10V

2.5V @ 250μA

1563pF @ 12V

11.2A Ta 73A Tc

19.2nC @ 4.5V

-

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 1 day ago)

3

2007

EAR99

Single

2W

13.6A

20V

Lead Free

4 Weeks

FET General Purpose Power

17.3ns

2.8 ns

23.8 ns

25V

No

NTD4863NT4G vs NTD4858N-35G

Certification

Related parts for NTD4863NT4G

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NTD4809N-35G

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NTD4863~~(11)~~
NTD486~~(24)~~
NTD48~~(98)~~
NTD4~~(112)~~
NTD~~(98)~~

Part Number	Manufacturers	Description	Stock	Price
NTD4863NT4G DISTI #	ON Semiconductor	Trans MOSFET N-CH 25V 11.3A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	2493	1 $0.65 10 $0.5489 25 $0.5429 50 $0.537 100 $0.4081 250 $0.4037 500 $0.2987 1000 $0.2884 3000 $0.2781 6000 $0.2677 15000 $0.2574 30000 $0.247 75000 $0.2367
NTD4863NT4G DISTI #	ON Semiconductor	MOSFET N-CH 25V 9.2A DPAK RoHS: Compliant	1628	1 $0.67 10 $0.563 100 $0.4222 500 $0.3096 1000 $0.23923
NTD4863NT4G DISTI #	ON Semiconductor	MOSFET N-CH 25V 9.2A DPAK RoHS: Compliant	1628	1 $0.67 10 $0.563 100 $0.4222 500 $0.3096 1000 $0.23923
NTD4863NT4G DISTI #	ON Semiconductor	MOSFET N-CH 25V 9.2A DPAK RoHS: Compliant	0
NTD4863NT4G DISTI #	ON Semiconductor	Trans MOSFET N-CH 25V 11.3A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	2493	25 $0.5429 50 $0.537 100 $0.4081 250 $0.4037 500 $0.2987 1000 $0.2884
NTD4863NT4G DISTI #	ON Semiconductor	NTD4863NT4G N-channel MOSFET Transistor, 49 A, 2 RoHS: Compliant	0	100 $0.4 250 $0.396 500 $0.392 1000 $0.388
NTD4863NT4G DISTI #	ON Semiconductor	MOSFET NFET 25V 49A 0.0093R DPAK RoHS: Compliant	0
NTD4863NT4G DISTI #	ON Semiconductor	RoHS: Not Compliant	157612	1 $0.4 25 $0.37 100 $0.36 500 $0.34 1000 $0.32
NTD4863NT4G DISTI #	ON Semiconductor	INSTOCK	238
NTD4863NT4G DISTI #	ON Semiconductor	INSTOCK	4185
NTD4863NT4G DISTI #	ON Semiconductor	Trans MOSFET N-CH 25V 11.3A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	2493	10 $0.5489 25 $0.5429 50 $0.537 100 $0.4081

ON Semiconductor NTD4863NT4G

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