ON Semiconductor NTD4863NA-1G

Name: NTD4863NA-1G
Brand: ON Semiconductor
SKU: 2852636-NTD4863NA-1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4863NA-1G

Manufacturer:: ON Semiconductor

Ventron No:: 2852636-NTD4863NA-1G

Description:: MOSFET N-CH 25V 9.2A IPAK

ECAD Model:

Datasheet:: NTD4863NA-1G

Specifications

ON Semiconductor NTD4863NA-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4863NA-1G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Pin Count
4
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Power Dissipation-Max
1.27W Ta 36.6W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.95W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
990pF @ 12V
Current - Continuous Drain (Id) @ 25°C
9.2A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
13.5nC @ 4.5V
Rise Time
16.5ns
Fall Time (Typ)
16.5 ns
Turn-Off Delay Time
20.2 ns
Continuous Drain Current (ID)
8.6A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
9.2A
Drain to Source Breakdown Voltage
25V
Pulsed Drain Current-Max (IDM)
98A
Avalanche Energy Rating (Eas)
60.5 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NTD4863NA-1G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 60.5 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 990pF @ 12V.This device has a continuous drain current (ID) of [8.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=25V, the drain-source breakdown voltage is 25V.A device's drain current is its maximum continuous current, and this device's drain current is 9.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20.2 ns.A maximum pulsed drain current of 98A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.

NTD4863NA-1G Features
the avalanche energy rating (Eas) is 60.5 mJ
a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20.2 ns
based on its rated peak drain current 98A.

NTD4863NA-1G Applications
There are a lot of ON Semiconductor
NTD4863NA-1G applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

NTD4863NA-1G More Descriptions

Power MOSFET 25V 49A 9.3 mOhm Single N-Channel DPAK
Power Field-Effect Transistor, 9.2A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:8.6A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):10.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD4863NA-1G.

Image

Part Number

Manufacturer

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain-source On Resistance-Max

Mount

View Compare
NTD4863NA-1G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

4

SILICON

-55°C~175°C TJ

Tube

2007

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

4

R-PSIP-T3

1

1.27W Ta 36.6W Tc

Single

ENHANCEMENT MODE

1.95W

DRAIN

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

13.5nC @ 4.5V

16.5ns

16.5 ns

20.2 ns

8.6A

20V

9.2A

25V

98A

60.5 mJ

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
NTD4863NA-35G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

Through Hole

TO-251-3 Stub Leads, IPak

NO

3

SILICON

-55°C~175°C TJ

Tube

2010

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

3

-

1

1.27W Ta 36.6W Tc

Single

ENHANCEMENT MODE

1.95W

DRAIN

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

-

-

-

11.3mA

20V

9.2A

-

98A

60.5 mJ

RoHS Compliant

Lead Free

25V

25V

-

-

-

-

-

-

-

-

-

NTD4863NA-1G vs NTD4863NA-35G
NTD4855N-35G

ON Semiconductor

-

Through Hole

TO-251-3 Stub Leads, IPak

NO

-

SILICON

-55°C~175°C TJ

Tube

-

e3

yes

Obsolete

1 (Unlimited)

3

-

TIN

MOSFET (Metal Oxide)

3

R-PSIP-T3

1

1.35W Ta 66.7W Tc

-

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

-

-

-

-

-

14A

-

197A

220 mJ

ROHS3 Compliant

-

25V

25V

SINGLE

NOT SPECIFIED

NOT SPECIFIED

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

4.5V 10V

±20V

0.006Ohm

-

NTD4863NA-1G vs NTD4855N-35G
NTD4959N-35G

ON Semiconductor

-

Through Hole

TO-251-3 Stub Leads, IPak

-

3

-

-55°C~175°C TJ

Tube

2009

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

1.3W Ta 52W Tc

-

-

-

-

N-Channel

-

9m Ω @ 30A, 10V

2.5V @ 250μA

1456pF @ 12V

9A Ta 58A Tc

25nC @ 11.5V

-

-

-

58A

-

-

-

-

-

RoHS Compliant

-

30V

-

-

-

-

-

-

4.5V 11.5V

±20V

-

Through Hole

NTD4863NA-1G vs NTD4959N-35G