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NTD4857NAT4G

ON Semiconductor NTD4857NAT4G

Part Number:
NTD4857NAT4G
Manufacturer:
ON Semiconductor
Ventron No:
3071225-NTD4857NAT4G
Description:
MOSFET N-CH 25V 12A DPAK
ECAD Model:
Datasheet:
NTD4857NAT4G

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Specifications
ON Semiconductor NTD4857NAT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4857NAT4G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Supplier Device Package
    DPAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5.7mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.96pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    12A Ta 78A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    25V
  • RoHS Status
    Non-RoHS Compliant
Description
NTD4857NAT4G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.96pF @ 12V.The transistor must receive a 25V drain to source voltage (Vdss) in order to function.

NTD4857NAT4G Features
a 25V drain to source voltage (Vdss)


NTD4857NAT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4857NAT4G applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NTD4857NAT4G More Descriptions
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 12A Ta 78A Tc 14.6A 1.31W 25V
MOSFET NFET 25V 78A 0.0057R DPAK
TRANS MOSFET N-CH 25V 15A 3-PIN(3 TAB) IPAK RAIL
NTD4857NAT4G - MOSFET N-CH 25V 12A DPAK;
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:14.6A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:9V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NTD4857NAT4G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    RoHS Status
    Lifecycle Status
    Surface Mount
    Number of Pins
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Lead Free
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain-source On Resistance-Max
    Factory Lead Time
    Subcategory
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Drain to Source Breakdown Voltage
    Radiation Hardening
    View Compare
  • NTD4857NAT4G
    NTD4857NAT4G
    ON Semiconductor
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    DPAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    N-Channel
    5.7mOhm @ 30A, 10V
    2.5V @ 250μA
    1.96pF @ 12V
    12A Ta 78A Tc
    24nC @ 4.5V
    25V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD4863NA-35G
    NTD4863NA-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    N-Channel
    9.3m Ω @ 30A, 10V
    2.5V @ 250μA
    990pF @ 12V
    9.2A Ta 49A Tc
    17.8nC @ 10V
    25V
    RoHS Compliant
    LAST SHIPMENTS (Last Updated: 1 week ago)
    NO
    3
    SILICON
    2010
    e3
    yes
    3
    EAR99
    Tin (Sn)
    3
    1
    1.27W Ta 36.6W Tc
    Single
    ENHANCEMENT MODE
    1.95W
    DRAIN
    SWITCHING
    11.3mA
    20V
    9.2A
    98A
    25V
    60.5 mJ
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTD4857NAT4G vs NTD4863NA-35G
  • NTD4855N-35G
    NTD4855N-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    N-Channel
    4.3m Ω @ 30A, 10V
    2.5V @ 250μA
    2.95pF @ 12V
    14A Ta 98A Tc
    32.7nC @ 4.5V
    25V
    ROHS3 Compliant
    -
    NO
    -
    SILICON
    -
    e3
    yes
    3
    -
    TIN
    3
    1
    1.35W Ta 66.7W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    SWITCHING
    -
    -
    14A
    197A
    25V
    220 mJ
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    4.5V 10V
    ±20V
    0.006Ohm
    -
    -
    -
    -
    -
    -
    -
    NTD4857NAT4G vs NTD4855N-35G
  • NTD4858N-35G
    NTD4858N-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    N-Channel
    6.2m Ω @ 30A, 10V
    2.5V @ 250μA
    1563pF @ 12V
    11.2A Ta 73A Tc
    19.2nC @ 4.5V
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    NO
    3
    SILICON
    2007
    e3
    yes
    3
    EAR99
    Tin (Sn)
    3
    1
    1.3W Ta 54.5W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    SWITCHING
    13.6A
    20V
    -
    -
    -
    -
    Lead Free
    -
    -
    -
    -
    -
    -
    4.5V 10V
    ±20V
    -
    4 Weeks
    FET General Purpose Power
    17.3ns
    2.8 ns
    23.8 ns
    25V
    No
    NTD4857NAT4G vs NTD4858N-35G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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