ON Semiconductor NTD4857N-35G
- Part Number:
- NTD4857N-35G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2852560-NTD4857N-35G
- Description:
- MOSFET N-CH 25V 12A IPAK
- Datasheet:
- NTD4857N-35G
ON Semiconductor NTD4857N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4857N-35G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max1.31W Ta 56.6W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.1W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.7m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1960pF @ 12V
- Current - Continuous Drain (Id) @ 25°C12A Ta 78A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
- Rise Time18.7ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3.6 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)14.6A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)12A
- Drain-source On Resistance-Max0.008Ohm
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)156A
- Avalanche Energy Rating (Eas)144.5 mJ
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NTD4857N-35G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 144.5 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1960pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.There is no drain current on this device since the maximum continuous current it can conduct is 12A.As a result of its turn-off delay time, which is 26 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 156A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTD4857N-35G Features
the avalanche energy rating (Eas) is 144.5 mJ
a continuous drain current (ID) of 14.6A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 156A.
NTD4857N-35G Applications
There are a lot of ON Semiconductor
NTD4857N-35G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 144.5 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1960pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.There is no drain current on this device since the maximum continuous current it can conduct is 12A.As a result of its turn-off delay time, which is 26 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 156A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTD4857N-35G Features
the avalanche energy rating (Eas) is 144.5 mJ
a continuous drain current (ID) of 14.6A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 156A.
NTD4857N-35G Applications
There are a lot of ON Semiconductor
NTD4857N-35G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NTD4857N-35G More Descriptions
Power MOSFET 25V 78A 5.7 mOhm Single N Channel DPAK
Power Field-Effect Transistor, 12A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:14.6A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
Power Field-Effect Transistor, 12A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:14.6A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTD4857N-35G.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSurface MountDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinFactory Lead TimeRadiation HardeningView Compare
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NTD4857N-35GLAST SHIPMENTS (Last Updated: 1 week ago)Through HoleThrough HoleTO-251-3 Stub Leads, IPak3SILICON-55°C~175°C TJTube2007e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified11.31W Ta 56.6W TcSingleENHANCEMENT MODE2.1WDRAINN-ChannelSWITCHING5.7m Ω @ 30A, 10V2.5V @ 250μA1960pF @ 12V12A Ta 78A Tc24nC @ 4.5V18.7ns4.5V 10V±20V3.6 ns26 ns14.6A20V12A0.008Ohm25V156A144.5 mJRoHS CompliantLead Free------
-
LAST SHIPMENTS (Last Updated: 1 week ago)-Through HoleTO-251-3 Stub Leads, IPak3SILICON-55°C~175°C TJTube2010e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)-MOSFET (Metal Oxide)--3-11.27W Ta 36.6W TcSingleENHANCEMENT MODE1.95WDRAINN-ChannelSWITCHING9.3m Ω @ 30A, 10V2.5V @ 250μA990pF @ 12V9.2A Ta 49A Tc17.8nC @ 10V-----11.3mA20V9.2A--98A60.5 mJRoHS CompliantLead FreeNO25V25V--
-
ACTIVE (Last Updated: 1 day ago)-Through HoleTO-251-3 Stub Leads, IPak3SILICON-55°C~175°C TJTube2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)--3-11.3W Ta 54.5W TcSingleENHANCEMENT MODE2WDRAINN-ChannelSWITCHING6.2m Ω @ 30A, 10V2.5V @ 250μA1563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V17.3ns4.5V 10V±20V2.8 ns23.8 ns13.6A20V--25V--ROHS3 CompliantLead FreeNO--4 WeeksNo
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-Through HoleThrough HoleTO-251-3 Stub Leads, IPak3--55°C~175°C TJTube2009--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1.3W Ta 52W Tc----N-Channel-9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V-4.5V 11.5V±20V--58A------RoHS Compliant--30V---
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