ON Semiconductor NTD4856NT4G
- Part Number:
- NTD4856NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3071220-NTD4856NT4G
- Description:
- MOSFET N-CH 25V 13.3A DPAK
- ECAD Model:
-
- Datasheet:
- NTD4856NT4G
ON Semiconductor NTD4856NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4856NT4G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.33W Ta 60W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.7m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.241pF @ 12V
- Current - Continuous Drain (Id) @ 25°C13.3A Ta 89A Tc
- Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)13.3A
- Drain-source On Resistance-Max0.0068Ohm
- Pulsed Drain Current-Max (IDM)179A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)180.5 mJ
- RoHS StatusROHS3 Compliant
NTD4856NT4G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 180.5 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2.241pF @ 12V.A device's drain current is its maximum continuous current, and this device's drain current is 13.3A.A maximum pulsed drain current of 179A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NTD4856NT4G Features
the avalanche energy rating (Eas) is 180.5 mJ
based on its rated peak drain current 179A.
a 25V drain to source voltage (Vdss)
NTD4856NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4856NT4G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 180.5 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2.241pF @ 12V.A device's drain current is its maximum continuous current, and this device's drain current is 13.3A.A maximum pulsed drain current of 179A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NTD4856NT4G Features
the avalanche energy rating (Eas) is 180.5 mJ
based on its rated peak drain current 179A.
a 25V drain to source voltage (Vdss)
NTD4856NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4856NT4G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
NTD4856NT4G More Descriptions
Power MOSFET 25V 89A 4.7 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 25V 16.8A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 13.3A Ta 89A Tc 16.8A 2.14W 7.5ns
Power Field-Effect Transistor, 13.3A I(D), 25V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 25V 13.3A/89A DPAK
Trans MOSFET N-CH 25V 16.8A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 13.3A Ta 89A Tc 16.8A 2.14W 7.5ns
Power Field-Effect Transistor, 13.3A I(D), 25V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 25V 13.3A/89A DPAK
The three parts on the right have similar specifications to NTD4856NT4G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusNumber of PinsPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCReach Compliance CodeCurrent RatingElement ConfigurationPower DissipationTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeFactory Lead TimeRise TimeFall Time (Typ)Radiation HardeningView Compare
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NTD4856NT4GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)2TINMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.33W Ta 60W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.7m Ω @ 30A, 10V2.5V @ 250μA2.241pF @ 12V13.3A Ta 89A Tc27nC @ 4.5V25V4.5V 10V±20V13.3A0.0068Ohm179A25V180.5 mJROHS3 Compliant--------------------- -
Through HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3TINMOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.35W Ta 66.7W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V25V4.5V 10V±20V14A0.006Ohm197A25V220 mJROHS3 Compliant--------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTubee0yesObsolete1 (Unlimited)2Tin/Lead (Sn80Pb20)MOSFET (Metal Oxide)-GULL WING235NOT SPECIFIED4R-PSSO-G2Not Qualified1-1.04W Ta 75W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING10m Ω @ 20A, 10V3V @ 250μA2400pF @ 24V8.4A Ta 68A Tc80nC @ 10V-4.5V 10V±20V-0.01Ohm28A-722 mJNon-RoHS CompliantOBSOLETE (Last Updated: 1 week ago)42005EAR99AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30Vnot_compliant68ASingle75W40 ns68A20V30VLead Free----
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Through HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubee3yesActive1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)----3--1-1.3W Ta 54.5W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6.2m Ω @ 30A, 10V2.5V @ 250μA1563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V-4.5V 10V±20V-----ROHS3 CompliantACTIVE (Last Updated: 1 day ago)32007EAR99-FET General Purpose Power---Single2W23.8 ns13.6A20V25VLead Free4 Weeks17.3ns2.8 nsNo
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