ON Semiconductor NTD4856N-35G

Name: NTD4856N-35G
Brand: ON Semiconductor
SKU: 2490280-NTD4856N-35G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4856N-35G

Manufacturer:: ON Semiconductor

Ventron No:: 2490280-NTD4856N-35G

Description:: MOSFET N-CH 25V 13.3A IPAK

ECAD Model:

Datasheet:: NTD4856N-35G

Specifications

ON Semiconductor NTD4856N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4856N-35G.

Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.33W Ta 60W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.241pF @ 12V
Current - Continuous Drain (Id) @ 25°C
13.3A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 4.5V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
13.3A
Drain-source On Resistance-Max
0.0068Ohm
Pulsed Drain Current-Max (IDM)
179A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
180.5 mJ
RoHS Status
ROHS3 Compliant

Description

NTD4856N-35G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 180.5 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.241pF @ 12V.The drain current is the maximum continuous current this device can conduct, which is 13.3A.Pulsed drain current is maximum rated peak drain current 179A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

NTD4856N-35G Features
the avalanche energy rating (Eas) is 180.5 mJ
based on its rated peak drain current 179A.
a 25V drain to source voltage (Vdss)

NTD4856N-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4856N-35G applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

NTD4856N-35G More Descriptions

Tube Through Hole N-Channel Single Mosfet Transistor 13.3A Ta 89A Tc 16.3A 2.14W 7.5ns
Power MOSFET 25V 89A 4.7 mOhm Single N-Channel DPAK
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:16.3A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):4.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD4856N-35G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Number of Pins

Published

ECCN Code

Element Configuration

Power Dissipation

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Lead Free

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Reach Compliance Code

Current Rating

Turn-Off Delay Time

Drain to Source Breakdown Voltage

View Compare
NTD4856N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

TIN

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.33W Ta 60W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.7m Ω @ 30A, 10V

2.5V @ 250μA

2.241pF @ 12V

13.3A Ta 89A Tc

27nC @ 4.5V

25V

4.5V 10V

±20V

13.3A

0.0068Ohm

179A

25V

180.5 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4906N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.38W Ta 37.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

5.5m Ω @ 30A, 10V

2.2V @ 250μA

1.932pF @ 15V

10.3A Ta 54A Tc

24nC @ 10V

30V

4.5V 10V

±20V

14A

0.008Ohm

223A

30V

48 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4856N-35G vs NTD4906N-1G
NTD4863NA-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

3

-

-

1

-

1.27W Ta 36.6W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

25V

-

-

9.2A

-

98A

25V

60.5 mJ

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

3

2010

EAR99

Single

1.95W

11.3mA

20V

Lead Free

-

-

-

-

-

-

-

-

NTD4856N-35G vs NTD4863NA-35G
NTD4302

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tube

e0

yes

Obsolete

1 (Unlimited)

2

Tin/Lead (Sn80Pb20)

MOSFET (Metal Oxide)

-

235

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

1.04W Ta 75W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

-

0.01Ohm

28A

-

722 mJ

Non-RoHS Compliant

OBSOLETE (Last Updated: 1 week ago)

4

2005

EAR99

Single

75W

68A

20V

Lead Free

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

GULL WING

not_compliant

68A

40 ns

30V

NTD4856N-35G vs NTD4302